{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T18:40:34Z","timestamp":1787164834056,"version":"build-2736575974"},"reference-count":35,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2025,1,19]],"date-time":"2025-01-19T00:00:00Z","timestamp":1737244800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["2020R1A3B2079375"],"award-info":[{"award-number":["2020R1A3B2079375"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS\u20102020\u2010NR049405"],"award-info":[{"award-number":["RS\u20102020\u2010NR049405"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100014364","name":"Samsung Science and Technology Foundation","doi-asserted-by":"publisher","award":["SSTF\u2010BA2101\u201005"],"award-info":[{"award-number":["SSTF\u2010BA2101\u201005"]}],"id":[{"id":"10.13039\/501100014364","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"published-print":{"date-parts":[[2025,2]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current\u2010induced out\u2010of\u2010plane spin polarization beyond the capability of conventional ferromagnet\/heavy\u2010metal systems, where the current\u2010induced spin polarization aligns in\u2010plane orthogonal to the in\u2010plane charge current and out\u2010of\u2010plane spin current. Here, a new approach is demonstrated for magnetic\u2010field\u2010free switching by fabricating a van\u2010der\u2010Waals magnet and oxide Fe\n                    <jats:sub>3<\/jats:sub>\n                    GeTe\n                    <jats:sub>2<\/jats:sub>\n                    \/SrTiO\n                    <jats:sub>3<\/jats:sub>\n                    heterostructure. This new magnetic\u2010field\u2010free switching is possible because the current\u2010driven accumulated spins at the Rashba interface precess around an emergent interface magnetism, eventually producing an ultimate out\u2010of\u2010plane spin polarization. This interpretation is further confirmed by the switching polarity change controlled by the in\u2010plane initialization magnetic fields with clear hysteresis. Van\u2010der\u2010Waals magnet and oxide are successfully combined for the first time, especially taking advantage of spin\u2010orbit torque on the SrTiO\n                    <jats:sub>3<\/jats:sub>\n                    oxide. This allows this study to establish a new way of magnetic field\u2010free switching. This work demonstrates an unusual perpendicular switching application of large spin Hall angle materials and precession of accumulated spins, and in doing so, opens up a new field and opportunities for van\u2010der\u2010Waals magnets and oxide spintronics.\n                  <\/jats:p>","DOI":"10.1002\/adma.202412037","type":"journal-article","created":{"date-parts":[[2025,1,19]],"date-time":"2025-01-19T22:35:27Z","timestamp":1737326127000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":19,"title":["Novel Magnetic\u2010Field\u2010Free Switching Behavior in vdW\u2010Magnet\/Oxide Heterostructure"],"prefix":"10.1002","volume":"37","author":[{"given":"Jihoon","family":"Keum","sequence":"first","affiliation":[{"name":"Department of Physics and Astronomy Seoul National University  Seoul 08826 South Korea"},{"name":"Center for Quantum Materials Department of Physics and Astronomy Seoul National University  Seoul 08826 South 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