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By breaking the crystalline inversion symmetry, the spin Berry curvature is expected to be significantly enhanced; this enhancement will increase the intrinsic spin Hall effect in ferromagnetic materials and, thus, the spin\u2013orbit torques (SOTs). However, this intriguing approach is not applied to devices; generally, the spin Hall effect in ferromagnet\/heavy\u2010metal\n                    <jats:italic>bilayer<\/jats:italic>\n                    is used for SOT magnetization switching. Here, SOT\u2010induced partial magnetization switching is demonstrated in a\n                    <jats:italic>single<\/jats:italic>\n                    layer of a single\u2010crystalline Weyl oxide SrRuO\n                    <jats:sub>3<\/jats:sub>\n                    (SRO) with a small current density of \u22483.1\u00a0\u00d7\u00a010\n                    <jats:sup>6<\/jats:sup>\n                    \u00a0A\u00a0cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    . Detailed analysis of the crystal structure in the seemingly perfect periodic lattice of the SRO film reveals barely discernible oxygen octahedral rotations with angles of \u22485\u00b0 near the interface with a substrate. Tight\u2010binding calculations indicate that a large spin Hall conductivity is induced around small gaps generated at band crossings by the synergy of inherent spin\u2012orbit coupling and band inversion due to the rotations, causing magnetization reversal. The results indicate that a minute atomic displacement in single\u2010crystal films can induce strong intrinsic SOTs that are useful for spin\u2010orbitronics devices.\n                  <\/jats:p>","DOI":"10.1002\/adma.202416091","type":"journal-article","created":{"date-parts":[[2025,4,24]],"date-time":"2025-04-24T05:18:56Z","timestamp":1745471936000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":13,"title":["Single\u2010Layer Spin\u2010Orbit\u2010Torque Magnetization Switching Due to Spin Berry Curvature Generated by Minute Spontaneous Atomic Displacement in a Weyl Oxide"],"prefix":"10.1002","volume":"37","author":[{"ORCID":"https:\/\/orcid.org\/0009-0000-0348-175X","authenticated-orcid":false,"given":"Hiroto","family":"Horiuchi","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering and Information Systems The University of Tokyo  7\u20103\u20101 Hongo Bunkyo\u2010ku Tokyo 113\u20138656 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Shirakata, Tokai\u2010mura Naka\u2010Gun Ibaraki 319\u20131195 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2110-0177","authenticated-orcid":false,"given":"Michihiko","family":"Yamanouchi","sequence":"additional","affiliation":[{"name":"Division of Electronics for Informatics Graduate School of Information Science and Technology Hokkaido University  Kita 14 Nishi 9 Sapporo\u2010Shi Hokkaido 060\u20130814 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4537-0692","authenticated-orcid":false,"given":"Yukio","family":"Sato","sequence":"additional","affiliation":[{"name":"Research and Education Institute for Semiconductors and Informatics Kumamoto University  2\u201039\u20101 Kurokami Chuo\u2010Ku Kumamoto 860\u20138555 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Tokyo 153\u20138505 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1417-9403","authenticated-orcid":false,"given":"Shinobu","family":"Ohya","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Systems The University of Tokyo  7\u20103\u20101 Hongo Bunkyo\u2010ku Tokyo 113\u20138656 Japan"},{"name":"Center for Spintronics Research Network (CSRN) The University of Tokyo  7\u20103\u20101 Hongo Bunkyo\u2010ku Tokyo 113\u20138656 Japan"},{"name":"Institute for Nano Quantum Information Electronics The University of Tokyo  4\u20106\u20101 Komaba Meguro\u2010ku Tokyo 153\u20138505 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