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However, concerns regarding power consumption of SOT\u2010memory are persisting. Here, this work proposes a method to construct magnetic tunnel junction (MTJ) by transferring chemically vapor\u2010deposited two\u2010dimensional (2D) Cr\n                    <jats:sub>3<\/jats:sub>\n                    Te\n                    <jats:sub>4<\/jats:sub>\n                    \/WS\n                    <jats:sub>2<\/jats:sub>\n                    van der Waals (vdW) heterostructures onto 2D Fe\n                    <jats:sub>3<\/jats:sub>\n                    GeTe\n                    <jats:sub>2<\/jats:sub>\n                    (FGT) magnet. The robustness and tunability of 2D magnets allow MTJs to exhibit non\u2010volatility, multiple output states, and impressive cycling durability. MTJs with thin WS\n                    <jats:sub>2<\/jats:sub>\n                    barriers (fewer than six layers) exhibit a linear tunneling effect,\u00a0achieving a low resistance\u2010area product (RA) of 15.5 k\u03a9\u00b7\u00b5m\n                    <jats:sup>2<\/jats:sup>\n                    using bilayer WS\n                    <jats:sub>2<\/jats:sub>\n                    , which facilitats low\u2010power operation. Furthermore, the different 2D magnets display a significant anti\u2010parallel window of up to 8 kOe. SOT\u2010memory based on the typical MTJ demonstrates a low write consumption of 0.3 mJ and read consumption of 9.7 nJ, marking a significant advancement in 2D vdW SOT\u2010memory. This research has pointed out a new direction for constructing low power consumption SOT\u2010memory with PMA field\u2010free switching.\n                  <\/jats:p>","DOI":"10.1002\/adma.202419939","type":"journal-article","created":{"date-parts":[[2025,2,14]],"date-time":"2025-02-14T06:16:31Z","timestamp":1739513791000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":25,"title":["Two\u2010Dimensional Cr\n                    <sub>3<\/sub>\n                    Te\n                    <sub>4<\/sub>\n                    \/WS\n                    <sub>2<\/sub>\n                    \/Fe\n                    <sub>3<\/sub>\n                    GeTe\n                    <sub>2<\/sub>\n                    \/WTe\n                    <sub>2<\/sub>\n                    Magnetic Memory with Field\u2010Free Switching and Low Power Consumption"],"prefix":"10.1002","volume":"37","author":[{"given":"Kun","family":"He","sequence":"first","affiliation":[{"name":"Hunan Provincial Key Laboratory of Two\u2010Dimensional Materials School of Physics and Electronics College of Semiconductors (College of Integrated Circuits) Hunan University  Changsha 410082 China"},{"name":"State Key Laboratory for Chemo\/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University  Changsha 410082 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bailing","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory for Chemo\/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University  Changsha 410082 China"},{"name":"School of Materials Science and Engineering Beijing Key Laboratory for Magnetoelectric Materials and Devices Peking University  Beijing 100871 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jianhang","family":"Nie","sequence":"additional","affiliation":[{"name":"Hunan Provincial Key Laboratory of Two\u2010Dimensional Materials School of Physics and Electronics College of Semiconductors (College of Integrated Circuits) Hunan University  Changsha 410082 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yanglong","family":"Hou","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering Beijing Key Laboratory for Magnetoelectric Materials and Devices Peking University  Beijing 100871 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changmeng","family":"Huan","sequence":"additional","affiliation":[{"name":"Chip Manufacturing Department Hunan Sanan Semiconductor Co., Ltd.  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