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Here, a new design concept is proposed for the robust quantum anomalous Hall (QAH) effect via entropy engineering in 2D magnets. As a prototypical example, the configurational entropy of monolayer transition metal trihalide VCl<jats:sub>3<\/jats:sub> is manipulated by incorporating four different transition\u2010metal cations [Ti,Cr,Fe,Co] into the honeycomb structure made of vanadium, such that all in\u2010plane mirror symmetries, inversion and\/or roto\u2010inversion are broken. Monolayer VCl<jats:sub>3<\/jats:sub> is a ferromagnetic Dirac half\u2010metal\u00a0in which spin\u2010polarized Dirac dispersion at valley momenta is accompanied by bulk states at the \u0393\u2010point and thus the spin\u2010orbit interaction\u2010driven QAH\u00a0phase does not exhibit fully gapped bulk band dispersion. Entropy\u2010driven bandstructure renormalization, especially band flattening in combination with red\u2010 and blue\u2010shifts at different momenta of the Brillouin zone and crystal\u2010field effects, transforms Dirac half\u2010metal to a Dirac spin\u2010gapless semiconductor and leads to a robust QAH phase with fully gapped bulk band dispersion and, thus, a purely topological edge state transport without mixing with dissipative bulk channels. These findings provide a paradigm for designing entropy\u2010engineered 2D materials for the realization of robust QAH effect and quantum device\u00a0applications.<\/jats:p>","DOI":"10.1002\/adma.202503319","type":"journal-article","created":{"date-parts":[[2025,6,17]],"date-time":"2025-06-17T08:09:58Z","timestamp":1750147798000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Tailoring Robust Quantum Anomalous Hall Effect via Entropy\u2010Engineering"],"prefix":"10.1002","volume":"37","author":[{"given":"Syeda Amina","family":"Shabbir","sequence":"first","affiliation":[{"name":"Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS) University of Wollongong Wollongong New South Wales 2525 Australia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Frank Fei","family":"Yun","sequence":"additional","affiliation":[{"name":"Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS) University of Wollongong Wollongong New South Wales 2525 Australia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1371-4817","authenticated-orcid":false,"given":"Muhammad","family":"Nadeem","sequence":"additional","affiliation":[{"name":"Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS) University of Wollongong Wollongong New South Wales 2525 Australia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4150-0848","authenticated-orcid":false,"given":"Xiaolin","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS) University of Wollongong Wollongong New South Wales 2525 Australia"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2025,6,3]]},"reference":[{"key":"e_1_2_8_1_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.100.156404"},{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202402503"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1016\/S1567-2719(05)80045-9"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.50.2024"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.74.1171"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.61.2015"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201904322"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1093\/nsr\/nww069"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1039\/D2TC00305H"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.9b00318"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.14.014082"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.18.034024"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0077607"},{"key":"e_1_2_8_14_1","first-page":"2","volume":"116","author":"Feng Y.","year":"2020","journal-title":"Appl. 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