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Investigating field\u2010free, ultrafast switching at room temperature in wafer\u2010scalable vdW heterostructures can advance the development of faster memories and enhance the understanding of magnetization switching mechanisms in 2D FMs. In this study, field\u2010free, room temperature spin\u2010orbit torque (SOT) switching at subnanosecond timescales in a wafer\u2010scalable Fe\n                    <jats:sub>3<\/jats:sub>\n                    GaTe\n                    <jats:sub>2<\/jats:sub>\n                    \/Pt heterostructure by epitaxial growth engineering is demonstrated. The introduction of a variable concentration gradient of Fe is used to establish the coexistence of in\u2010plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) within the ferromagnetic layer. The field\u2010free switching, driven by the SOT from Pt, is achieved by using the IMA component to break the in\u2010plane symmetry during the switching process. This work paves the way for the integration of efficient 2D vdW materials in advanced spintronic devices and faster memory technologies.\n                  <\/jats:p>","DOI":"10.1002\/adma.202505190","type":"journal-article","created":{"date-parts":[[2025,8,18]],"date-time":"2025-08-18T08:56:37Z","timestamp":1755507397000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["Subnanosecond Field\u2010Free Switching of a Wafer\u2010Scalable van der Waals Ferromagnet at Room Temperature"],"prefix":"10.1002","volume":"37","author":[{"given":"Ao","family":"Du","sequence":"first","affiliation":[{"name":"State Key Laboratory of Spintronics Hangzhou International Innovation Institute Beihang University  Hangzhou 311115 China"},{"name":"Department of Materials ETH Zurich  Zurich CH\u20108093 Switzerland"},{"name":"Fert Beijing Institute School of Integrated Circuit Science and Engineering Beihang University  Beijing 100191 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