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Here, the heteroepitaxial assembly of C\n                    <jats:sub>60<\/jats:sub>\n                    molecules on monolayer tungsten disulfide (ML\u2010WS\n                    <jats:sub>2<\/jats:sub>\n                    ), where an anisotropic compression strain within the C\n                    <jats:sub>60<\/jats:sub>\n                    lattice at the heterointerface induces the formation of 1D polymeric C\n                    <jats:sub>60<\/jats:sub>\n                    strings and activates otherwise symmetry\u2010forbidden S\n                    <jats:sub>1<\/jats:sub>\n                    \u2192 S\n                    <jats:sub>0<\/jats:sub>\n                    optical transitions, is reported. This, coupled with interfacial energy transfer from ML\u2010WS\n                    <jats:sub>2<\/jats:sub>\n                    to C\n                    <jats:sub>60<\/jats:sub>\n                    , results in a remarkable 310% enhancement in the PL intensity compared to disordered C\n                    <jats:sub>60<\/jats:sub>\n                    aggregates. The resulting C\n                    <jats:sub>60<\/jats:sub>\n                    \/ML\u2010WS\n                    <jats:sub>2<\/jats:sub>\n                    transistors exhibit superior electrical and optoelectronic performance, achieving a charge carrier mobility of 10.4 cm\n                    <jats:sup>2<\/jats:sup>\n                    V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    , facilitated by an ultralow 230 meV contact barrier with Au electrodes. These devices demonstrate a superior photoresponsivity of 46.4 A W\n                    <jats:sup>\u22121<\/jats:sup>\n                    and a detectivity of 3.6 \u00d7 10\n                    <jats:sup>12<\/jats:sup>\n                    Jones, greatly outperforming pristine ML\u2010WS\n                    <jats:sub>2<\/jats:sub>\n                    counterpart devices.\n                  <\/jats:p>","DOI":"10.1002\/adma.202516798","type":"journal-article","created":{"date-parts":[[2025,10,28]],"date-time":"2025-10-28T13:39:12Z","timestamp":1761658752000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Heteroepitaxial Strain Engineering and Interfacial Energy Transfer Boosting Optoelectronic Properties in C\n                    <sub>60<\/sub>\n                    \/WS\n                    <sub>2<\/sub>\n                    van der Waals Heterostructures"],"prefix":"10.1002","volume":"38","author":[{"given":"Jing","family":"Guo","sequence":"first","affiliation":[{"name":"Institute of Materials Research Shenzhen Geim Graphene Center Shenzhen International Graduate School Tsinghua University  Shenzhen 518055 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhichao","family":"Cheng","sequence":"additional","affiliation":[{"name":"Institute of Materials Research Shenzhen Geim Graphene Center Shenzhen International Graduate School Tsinghua University  Shenzhen 518055 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiarong","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Materials Research Shenzhen Geim Graphene Center Shenzhen International Graduate School Tsinghua University  Shenzhen 518055 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haotian","family":"Guo","sequence":"additional","affiliation":[{"name":"Institute of 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