{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,12]],"date-time":"2026-10-12T15:51:58Z","timestamp":1791820318180,"version":"4.3.4"},"reference-count":78,"publisher":"Wiley","issue":"7","license":[{"start":{"date-parts":[[2025,11,20]],"date-time":"2025-11-20T00:00:00Z","timestamp":1763596800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2025,11,20]],"date-time":"2025-11-20T00:00:00Z","timestamp":1763596800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100014188","name":"Ministry of Science and ICT, South Korea","doi-asserted-by":"publisher","award":["RS\u20102025\u201000556718"],"award-info":[{"award-number":["RS\u20102025\u201000556718"]}],"id":[{"id":"10.13039\/501100014188","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"published-print":{"date-parts":[[2026,2]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    The ferroelectric semiconductor field\u2010effect transistors (FeS\u2010FETs) based on \u03b1\u2010In\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>3<\/jats:sub>\n                    emerge as promising non\u2010volatile memory devices. However, the intrinsic in\u2010plane (IP) crystallographic anisotropy of \u03b1\u2010In\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>3<\/jats:sub>\n                    introduces orientation dependence, leading to pronounced variations in memory performance depending on the IP alignment of the source\/drain (S\/D) contacts. This study presents the first demonstration of IP anisotropy\u2010dependent ferroelectricity in \u03b1\u2010In\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>3<\/jats:sub>\n                    FeS\u2010FETs with S\/D contacts aligned along the armchair (AC) and zigzag (ZZ) directions. The AC\u2010aligned S\/D configuration achieves a ferroelectric resistance switching (FRS) ratio of 6.42, an on\/off current ratio of 4.53 \u00d7 10\n                    <jats:sup>4<\/jats:sup>\n                    , and a normalized memory window (MW) of 59 %, whereas the ZZ\u2010aligned counterpart exhibits an FRS ratio of 1.05, an on\/off ratio of 5.25, and negligible MW. The electron transports proceed through twisted pathways along the AC direction, but proceed along a straight trajectory in the ZZ direction to avoid high\u2010energy barrier regions due to the threefold rotational symmetric lattice. Thus, the excessive electron transmission and a reduced Schottky barrier height effectively screen the influence of ferroelectric bound charges in the ZZ\u2010aligned S\/D contacts. These findings establish clear correlations between IP anisotropy and the ferroelectric functionality of \u03b1\u2010In\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>3<\/jats:sub>\n                    , offering critical guidelines for the design of FeS\u2010FETs.\n                  <\/jats:p>","DOI":"10.1002\/adma.202517849","type":"journal-article","created":{"date-parts":[[2025,11,20]],"date-time":"2025-11-20T10:42:23Z","timestamp":1763635343000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Unraveling In\u2010Plane Crystallographic Anisotropy\u2010Dependent Memory Performance In Van Der Waals \u03b1\u2010In\n                    <sub>2<\/sub>\n                    Se\n                    <sub>3<\/sub>\n                    Ferroelectric Semiconductor Field\u2010Effect Transistors"],"prefix":"10.1002","volume":"38","author":[{"given":"Jong\u2010Hyun","family":"Kim","sequence":"first","affiliation":[{"name":"Department of Semiconductor Systems Engineering Korea University  145, Anam\u2010ro Seongbuk\u2010gu Seoul 02841 South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seung\u2010Hwan","family":"Kim","sequence":"additional","affiliation":[{"name":"School of Electronics and Computer Engineering Chonnam National University  Gwangju 61186 SouthKorea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyeong\u2010Kyu","family":"Jin","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering Korea University  145, Anam\u2010ro Seongbuk\u2010gu Seoul 02841 South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Deji","family":"Akinwande","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering University of Texas at Austin  10100 Burnet Rd. Bldg 160 Austin TX 78758 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9446-5981","authenticated-orcid":false,"given":"Hyun\u2010Yong","family":"Yu","sequence":"additional","affiliation":[{"name":"Department of Semiconductor Systems Engineering Korea University  145, Anam\u2010ro Seongbuk\u2010gu Seoul 02841 South Korea"},{"name":"School of Electrical Engineering Korea University  145, Anam\u2010ro Seongbuk\u2010gu Seoul 02841 South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2025,11,20]]},"reference":[{"key":"e_1_2_9_1_1","doi-asserted-by":"publisher","DOI":"10.1039\/D1RA07728G"},{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202470016"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/ac5b17"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202308301"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-018-0336-3"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-57714-9"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.adu3803"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.ado6038"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-54841-7"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202108826"},{"key":"e_1_2_9_11_1","volume":"18","author":"Bai L.","year":"2024","journal-title":"ACS Nano"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-46390-w"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.134.016801"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemrev.3c00129"},{"key":"e_1_2_9_15_1","volume":"4","author":"Huang Y.u\u2010T.","year":"2022","journal-title":"Info. Mat."},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201803738"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aar7720"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adg4346"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature13831"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1038\/srep13706"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5b03575"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201900975"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-020-16291-9"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpcc.2c03433"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1039\/D0TC02415E"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpcc.1c01800"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2024.161921"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtelec.2023.100047"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5c08221"},{"key":"e_1_2_9_30_1","volume":"122","author":"Cai C.","year":"2023","journal-title":"Appl. Phys. Lett."},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.2c19660"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.4c21713"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.7b02198"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202009999"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1039\/C9NR10207H"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-022-01257-3"},{"key":"e_1_2_9_37_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.120.227601"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.chemphys.2023.111822"},{"key":"e_1_2_9_39_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0050979"},{"key":"e_1_2_9_40_1","doi-asserted-by":"crossref","unstructured":"M.Si Y.Luo W.Chung H.Bae D.Zheng J.Li J.Qin G.Qiu S.Yu P. D.Ye inTechnical Digest \u2010 International Electron Devices Meeting IEDM Institute of Electrical And Electronics Engineers Inc San Francisco CA USA 2019 pp.6.6.1\u20136.6.4.","DOI":"10.1109\/IEDM19573.2019.8993622"},{"key":"e_1_2_9_41_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202407253"},{"key":"e_1_2_9_42_1","doi-asserted-by":"publisher","DOI":"10.1002\/smtd.202101583"},{"key":"e_1_2_9_43_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.3c04378"},{"key":"e_1_2_9_44_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202413178"},{"key":"e_1_2_9_45_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtnano.2023.100320"},{"key":"e_1_2_9_46_1","doi-asserted-by":"publisher","DOI":"10.1039\/D3NR01567J"},{"key":"e_1_2_9_47_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2022.107252"},{"key":"e_1_2_9_48_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0035515"},{"key":"e_1_2_9_49_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-00492-7"},{"key":"e_1_2_9_50_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-019-0338-7"},{"key":"e_1_2_9_51_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202405459"},{"key":"e_1_2_9_52_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202316583"},{"key":"e_1_2_9_53_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.3c01198"},{"key":"e_1_2_9_54_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6633\/aa915a"},{"key":"e_1_2_9_55_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202410851"},{"key":"e_1_2_9_56_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-023-05819-w"},{"key":"e_1_2_9_57_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.2c11925"},{"key":"e_1_2_9_58_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.scib.2023.12.027"},{"key":"e_1_2_9_59_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.scib.2021.06.020"},{"key":"e_1_2_9_60_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpclett.2c00618"},{"key":"e_1_2_9_61_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.3c00187"},{"key":"e_1_2_9_62_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.3c04186"},{"key":"e_1_2_9_63_1","doi-asserted-by":"publisher","DOI":"10.1002\/ijch.202100112"},{"key":"e_1_2_9_64_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-021-27617-6"},{"key":"e_1_2_9_65_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-022-00847-2"},{"key":"e_1_2_9_66_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201800657"},{"key":"e_1_2_9_67_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202303447"},{"key":"e_1_2_9_68_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-020-20257-2"},{"key":"e_1_2_9_69_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202310438"},{"key":"e_1_2_9_70_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-021-24875-2"},{"key":"e_1_2_9_71_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.isci.2022.105160"},{"key":"e_1_2_9_72_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0025-5408(01)00746-2"},{"key":"e_1_2_9_73_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-648X\/ab4007"},{"key":"e_1_2_9_74_1","doi-asserted-by":"publisher","DOI":"10.1016\/0927-0256(96)00008-0"},{"key":"e_1_2_9_75_1","doi-asserted-by":"publisher","DOI":"10.1002\/jcc.20495"},{"key":"e_1_2_9_76_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202405233"},{"key":"e_1_2_9_77_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202315543"},{"key":"e_1_2_9_78_1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268337"}],"container-title":["Advanced Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/adma.202517849","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/adma.202517849","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/adma.202517849","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,2,2]],"date-time":"2026-02-02T10:27:48Z","timestamp":1770028068000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/adma.202517849"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,11,20]]},"references-count":78,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2026,2]]}},"alternative-id":["10.1002\/adma.202517849"],"URL":"https:\/\/doi.org\/10.1002\/adma.202517849","archive":["Portico"],"relation":{},"ISSN":["0935-9648","1521-4095"],"issn-type":[{"value":"0935-9648","type":"print"},{"value":"1521-4095","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,11,20]]},"assertion":[{"value":"2025-09-11","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2025-11-20","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e17849"}}