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However, given that graphene is a single\u2010atom\u2010thick material with a large surface\u2010to\u2010volume ratio, the intriguing properties of the graphene optoelectronic devices are very susceptible to surrounding environments, including interfacial states and dangling bonds from dielectrics. This has degenerated the performance of graphene electro\u2010optic modulators that rely on uniform electrical gating. Herein, a facile integration of a Sb\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    \/Al\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    hybrid dielectric on the chemical\u2010vapor\u2010deposited (CVD) graphene is reported for electro\u2010absorption modulators. The Sb\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    molecular crystal as interfacial layer enables a homogeneous Al\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    dielectric growth and a van der Waals (vdW) interface with graphene, which can significantly reduce the interfacial scattering centers (such as dangling bonds) and thus preserves the electronic properties of graphene, showing an averaged carrier mobility (\n                    <jats:italic>\u03bc<\/jats:italic>\n                    ) of 10880 cm\n                    <jats:sup>2<\/jats:sup>\n                    V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    and residual carrier concentration (\n                    <jats:italic>n<\/jats:italic>\n                    <jats:sup>*<\/jats:sup>\n                    ) of 1.35 \u00d7 10\n                    <jats:sup>11<\/jats:sup>\n                    cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    . In contrast to the device with a single dielectric, the electro\u2010absorption modulator with the vdW interface shows a 1.6 times higher modulation efficiency (0.0054 dB V\n                    <jats:sup>\u22121<\/jats:sup>\n                    \u00b5m\n                    <jats:sup>\u22121<\/jats:sup>\n                    ) and 5.8 times higher bandwidth (\u224835 GHz). Moreover, modulation rate is up to 30 Gbit s\n                    <jats:sup>\u22121<\/jats:sup>\n                    . Our work provides a promising dielectric option for graphene optoelectronic devices.\n                  <\/jats:p>","DOI":"10.1002\/adma.202517865","type":"journal-article","created":{"date-parts":[[2025,11,27]],"date-time":"2025-11-27T11:35:11Z","timestamp":1764243311000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["High\u2010Speed Electro\u2010Optic Modulator Based on Chemical\u2010Vapor\u2010Deposited Graphene with van der Waals Hybrid Dielectric"],"prefix":"10.1002","volume":"38","author":[{"ORCID":"https:\/\/orcid.org\/0009-0003-7843-620X","authenticated-orcid":false,"given":"Jun","family":"Qian","sequence":"first","affiliation":[{"name":"Center for Nanochemistry Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University  Beijing 100871 P. R. 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China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junhao","family":"Liao","sequence":"additional","affiliation":[{"name":"Beijing Graphene Institute  Beijing 100095 P. R. China"},{"name":"School of Materials Science and Engineering Peking University  Beijing 100871 P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xin","family":"Gao","sequence":"additional","affiliation":[{"name":"Center for Nanochemistry Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University  Beijing 100871 P. R. China"},{"name":"Beijing Graphene Institute  Beijing 100095 P. R. 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