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However, the BPVE is mainly limited in the wide\u2010bandgap ferroelectrics and complex van der Waals (vdW) heterostructures and scarcely demonstrated in narrow\u2010bandgap vdW semiconductors. Here we develop a surface self\u2010limiting diffusion driven growth strategy to rapidly synthesize millimeter\u2010scale\u2010length narrow\u2010bandgap tellurium (Te) single\u2010crystal nanowires with highly uniform non\u2010centrosymmetric structure. The sub\u20105\u2010min ultrafast growth\u2010a feat not realized in prior Te synthesis arises from ultralow self\u2010limiting diffusion and nucleation barriers of H\n                    <jats:sub>2<\/jats:sub>\n                    Te precursors in a hydrogen\u2010assisted space\u2010confined environment. The fabricated photodetectors show broadband BPVE response from 520 nm to 4.6 \u00b5m, ultrahigh peak responsibility of 220 A\/W and blackbody responsivity of 2.3 A\/W, which are far superior to the state\u2010of\u2010the\u2010art self\u2010powered vdW devices. Furthermore, we demonstrate high\u2010resolution polarization imaging and BPVE detector arrays in a single Te nanowire. This work opens perspectives of ultralong Te nanowires with robust BPVE for the development of high\u2010performance on\u2010chip integrated multidimensional photodetection systems.\n                  <\/jats:p>","DOI":"10.1002\/adma.202517882","type":"journal-article","created":{"date-parts":[[2026,1,25]],"date-time":"2026-01-25T06:52:06Z","timestamp":1769323926000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":18,"title":["Sub\u20105\u2010Min Ultrafast Growth of Millimeter\u2010Scale\u2010Length Tellurium Nanowires With Broadband Bulk Photovoltaic Response"],"prefix":"10.1002","volume":"38","author":[{"given":"Haibiao","family":"Guan","sequence":"first","affiliation":[{"name":"College of Optical and Electronic Technology China Jiliang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sheng","family":"Ni","sequence":"additional","affiliation":[{"name":"College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zehao","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Optical and Electronic Technology China Jiliang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dabao","family":"Xie","sequence":"additional","affiliation":[{"name":"College of Optical and Electronic Technology China Jiliang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jing","family":"Zhou","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Science  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dan","family":"Cao","sequence":"additional","affiliation":[{"name":"College of Science China Jiliang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Li","family":"Han","sequence":"additional","affiliation":[{"name":"College of Optical and Electronic Technology China Jiliang University  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changlong","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences  Hangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoshuang","family":"Chen","sequence":"additional","affiliation":[{"name":"College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences  Hangzhou China"},{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Science  Shanghai 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