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Nevertheless, the need for perfect alignment between adjacent layers and finite local interactions at the interfaces often complicates device architectures and leads to high power consumption. Addressing these challenges, a new device configuration with partial overlap while maintaining the global effect would be a promising scheme. Here, using Fe\n                    <jats:sub>3<\/jats:sub>\n                    GeTe\n                    <jats:sub>2<\/jats:sub>\n                    \/MnBi\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>4<\/jats:sub>\n                    (FGT\/MBT) as a paradigm, the global\u2010pinning exchange bias (GPEB) effect is successfully achieved with a horizontal pinning distance approaching 100 \u00b5m. Specifically, once stacking a small\u2010area MBT on FGT, the entire FGT is fully biased due to magnetic couplings inherent to vdW magnets, as confirmed by the theoretical model. Interlayer coupling and coverage ratio provide additional degrees of freedom to manipulate the GPEB. Remarkably, this emergent GPEB effect is prevalent across vdW heterostructures composed of various vdW magnets. This work expands design flexibility and offers strategies for constructing new in\u2010memory computing devices, opening exciting possibilities for future spintronic applications.\n                  <\/jats:p>","DOI":"10.1002\/adma.202518642","type":"journal-article","created":{"date-parts":[[2025,11,30]],"date-time":"2025-11-30T05:06:49Z","timestamp":1764479209000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Emergent Global\u2010Pinning Exchange Bias in van der Waals Magnetic Heterostructures"],"prefix":"10.1002","volume":"38","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4331-0928","authenticated-orcid":false,"given":"Wei","family":"Niu","sequence":"first","affiliation":[{"name":"New Energy Technology Engineering Laboratory of Jiangsu Province &amp; School of Science Nanjing University of Posts and Telecommunications  Nanjing 210023 China"},{"name":"State Key Laboratory of Spintronics Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoqian","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University  Nanjing 211189 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kai","family":"Gu","sequence":"additional","affiliation":[{"name":"New Energy Technology Engineering Laboratory of Jiangsu Province &amp; 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