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While artificial synapses have been demonstrated in magnetic multilayers by electrically controlling skyrmion populations, their probabilistic nucleation severely limits reliability. The recent emergence of 2D van der Waals magnets, with their inherent tunability and novel spintronic phenomena, offers a promising platform to overcome these challenges. Here, we demonstrate an artificial synaptic device in 2D ferromagnet Fe\n                    <jats:sub>3<\/jats:sub>\n                    GaTe\n                    <jats:sub>2<\/jats:sub>\n                    , operating on the fundamentally different principle of a deterministic and collective spin texture transformation from a skyrmion\u2010lattice to a stripe\u2010domain state. This transformation yields a linear, reproducible modulation of the anomalous Hall resistance. The slope of this linear response, defined as the synaptic weight, is effectively tuned by varying the pulse width, thereby enabling multi\u2010weight functionality and multiply\u2010accumulate operations. Projected scaling of the device reduces the single\u2010operation energy consumption to 0.66 pJ, a level comparable to state\u2010of\u2010the\u2010art memristor technologies (e.g., resistive random\u2010access memory and phase\u2010change memory). Furthermore, a hardware\u2010informed quantized neural network based on this synapse achieves a high recognition accuracy (\u223c96.1%) in handwritten\u2010digit recognition. Our findings establish a robust pathway for creating large\u2010scale and energy\u2010efficient neuromorphic systems based on the collective dynamics of Fe\n                    <jats:sub>3<\/jats:sub>\n                    GaTe\n                    <jats:sub>2<\/jats:sub>\n                    spin textures at room temperature.\n                  <\/jats:p>","DOI":"10.1002\/adma.202520288","type":"journal-article","created":{"date-parts":[[2026,5,21]],"date-time":"2026-05-21T06:33:18Z","timestamp":1779345198000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Room\u2010Temperature Skyrmionic Synapse in 2D Ferromagnet Fe\n                    <sub>3<\/sub>\n                    GaTe\n                    <sub>2<\/sub>\n                    Operating via Collective Spin Texture Transformation"],"prefix":"10.1002","volume":"38","author":[{"given":"Jixiang","family":"Huang","sequence":"first","affiliation":[{"name":"School of Microelectronics University of Science and Technology of China  Hefei Anhui China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tongji","family":"Zhu","sequence":"additional","affiliation":[{"name":"School of Microelectronics University of Science and Technology of China  Hefei Anhui China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"PeiYu","family":"Cai","sequence":"additional","affiliation":[{"name":"Institute for Condensed Matter and Complex Systems School of Physics and Astronomy The University of Edinburgh  Edinburgh UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoming","family":"Ma","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhen","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Physics University of Science and Technology of China  Hefei Anhui China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ruifu","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits Huazhong University of Science and Technology  Wuhan Hubei China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yi","family":"Hao","sequence":"additional","affiliation":[{"name":"School of Microelectronics University of Science and Technology of China  Hefei Anhui China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingdi","family":"Lu","sequence":"additional","affiliation":[{"name":"Hefei National Research Center for Physical Sciences at Microscale University of Science and Technology of China  Hefei China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Liubing","family":"He","sequence":"additional","affiliation":[{"name":"School of Microelectronics University of Science and Technology of China  Hefei Anhui 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Technology of China  Hefei Anhui China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shiming","family":"Lei","sequence":"additional","affiliation":[{"name":"Department of Physics Hong Kong University of Science and Technology  Hong Kong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pavel","family":"Parchinskiy","sequence":"additional","affiliation":[{"name":"Department of Semiconductor and Polymer Physics National University of Uzbekistan  Tashkent Uzbekistan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jing","family":"Teng","sequence":"additional","affiliation":[{"name":"Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing China"},{"name":"School of Physical Sciences University of Chinese Academy of Sciences  Beijing 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