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A memristor offers analog programmability, but it suffers from the same limitation because reducing the conductance decreases\n                    <jats:italic>G<\/jats:italic>\n                    <jats:sub>max<\/jats:sub>\n                    \/\n                    <jats:italic>G<\/jats:italic>\n                    <jats:sub>min<\/jats:sub>\n                    , degrading the learning accuracy. Here, a path\u2010decoupled III\u2013V van der Waals (vdW) memtransistor overcomes this constraint via the spatial separation of the ionic and electronic transport pathways. Using H\n                    <jats:sub>x<\/jats:sub>\n                    K\n                    <jats:sub>1\u2013x<\/jats:sub>\n                    GaSb\n                    <jats:sub>2<\/jats:sub>\n                    , K\n                    <jats:sup>+<\/jats:sup>\n                    vacancies confined to the vdW gap serve as mobile ionic species, while holes conduct within the covalently bonded [GaSb\n                    <jats:sub>2<\/jats:sub>\n                    ] layers. This decoupling yields a high K\n                    <jats:sup>+<\/jats:sup>\n                    diffusivity and enables memristive switching at markedly reduced voltages. The memristive window\n                    <jats:italic>G<\/jats:italic>\n                    <jats:sub>max<\/jats:sub>\n                    \/\n                    <jats:italic>G<\/jats:italic>\n                    <jats:sub>min<\/jats:sub>\n                    \u2014which is set by ionic motion\u2014remains invariant under gate modulation, whereas\n                    <jats:italic>E<\/jats:italic>\n                    <jats:sub>prog<\/jats:sub>\n                    decreases via electrostatic control of the channel conductance. Consequently, the synaptic plasticity and neuromorphic inference maintain a high accuracy (&gt;80%), while\n                    <jats:italic>E<\/jats:italic>\n                    <jats:sub>prog<\/jats:sub>\n                    is reduced by more than an order of magnitude. The results establish ionic\u2010electronic path decoupling as a general strategy for breaking the accuracy\u2010energy trade\u2010off in emerging neuromorphic hardware and position III\u2013V vdW materials, which are promising candidates for application in low\u2010energy, artificial intelligence accelerators.\n                  <\/jats:p>","DOI":"10.1002\/adma.202523670","type":"journal-article","created":{"date-parts":[[2026,5,13]],"date-time":"2026-05-13T08:15:54Z","timestamp":1778660154000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Path\u2010Decoupled Cation\u2010Eutaxy III\u2013V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy\u2010Energy Trade\u2010off"],"prefix":"10.1002","author":[{"given":"Jihong","family":"Bae","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ji Hoon","family":"Han","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Taeyoung","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jongbum","family":"Won","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seokmin","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gyu Won","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sungsoon","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hong","family":"Choi","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Taehoon","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hong\u2010Sub","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Materials Science &amp; Engineering Kyung Hee University  Yongin South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jae\u2010Hyun","family":"Lee","sequence":"additional","affiliation":[{"name":"Center For Nanomedicine Institute For Basic Science (IBS)  Seoul South Korea"},{"name":"Graduate Program of Nano Biomedical Engineering (NanoBME) Advanced Science Institute Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Young Jin","family":"Choi","sequence":"additional","affiliation":[{"name":"Department of Nanotechnology and Advanced Materials Engineering Hybrid Materials Research Center (HMC) Sejong University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinwoo","family":"Cheon","sequence":"additional","affiliation":[{"name":"Center For Nanomedicine Institute For Basic Science (IBS)  Seoul South Korea"},{"name":"Graduate Program of Nano Biomedical Engineering (NanoBME) Advanced Science Institute Yonsei University  Seoul South Korea"},{"name":"Department of Chemistry Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7601-6282","authenticated-orcid":false,"given":"Wooyoung","family":"Shim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Yonsei University  Seoul South Korea"},{"name":"Center For Multi\u2010Dimensional Materials Yonsei University  Seoul South Korea"},{"name":"Center For Nanomedicine Institute For Basic Science (IBS)  Seoul South Korea"},{"name":"Graduate Program of Nano Biomedical Engineering (NanoBME) Advanced Science Institute Yonsei University  Seoul South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2026,5,13]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010023\u201006337\u20105"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.adh1174"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42254\u2010020\u20100208\u20102"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010025\u201001469\u20100"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201046682\u20101"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010023\u201001064\u20101"},{"key":"e_1_2_9_8_1","volume-title":"Physics of Semiconductor Devices","author":"Sze S. 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