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However, the magnetic ground state of monolayer Cr\n                    <jats:sub>2<\/jats:sub>\n                    Ge\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>6<\/jats:sub>\n                    remains elusive due to fragile and irregularly shaped thin flake samples with weak magnetic signals. Here, we successfully grow Cr\n                    <jats:sub>2<\/jats:sub>\n                    Ge\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>6<\/jats:sub>\n                    films down to one monolayer by molecular beam epitaxy. By exploiting a self\u2010limiting growth mode, we achieve uniform monolayer Cr\n                    <jats:sub>2<\/jats:sub>\n                    Ge\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>6<\/jats:sub>\n                    films across entire millimeter\u2010scale Si substrates. Through a combination of superconducting quantum interference device magnetometry and anomalous Hall effect measurements, we establish that monolayer Cr\n                    <jats:sub>2<\/jats:sub>\n                    Ge\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>6<\/jats:sub>\n                    exhibits intrinsic ferromagnetism with perpendicular magnetic anisotropy below 10 K, albeit with strong magnetic fluctuations characteristic of its 2D nature. Furthermore, a systematic thickness\u2010dependent study reveals that a crossover from this fluctuation\u2010dominated 2D magnetism turns into conventional long\u2010range ferromagnetic order as the film thickness increases. Our work not only definitively establishes the intrinsic ferromagnetic ground state of monolayer Cr\n                    <jats:sub>2<\/jats:sub>\n                    Ge\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>6<\/jats:sub>\n                    , but also provides a scalable, silicon\u2010compatible route for preparing the 2D magnet for future spintronic or quantum devices.\n                  <\/jats:p>","DOI":"10.1002\/adma.72994","type":"journal-article","created":{"date-parts":[[2026,4,8]],"date-time":"2026-04-08T09:52:17Z","timestamp":1775641937000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Ferromagnetism of Molecular Beam Epitaxy\u2010grown Ultra\u2010thin Cr\n                    <sub>2<\/sub>\n                    Ge\n                    <sub>2<\/sub>\n                    Te\n                    <sub>6<\/sub>\n                    Films Down to the Monolayer Limit on Si Substrates"],"prefix":"10.1002","author":[{"given":"Pengfei","family":"Ji","sequence":"first","affiliation":[{"name":"State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University  Beijing China"},{"name":"Frontier Science Center for Quantum Information  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ruixuan","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University  Beijing China"},{"name":"Frontier Science Center for Quantum Information  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tianchen","family":"Zhu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University  Beijing China"},{"name":"Frontier Science Center for Quantum Information  Beijing 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