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Rutile TiO\n                    <jats:sub>2<\/jats:sub>\n                    offers a dielectric constant significantly higher than that of tetragonal ZrO\n                    <jats:sub>2<\/jats:sub>\n                    and anatase TiO\n                    <jats:sub>2<\/jats:sub>\n                    . However, its application on industry\u2010standard TiN electrodes is impeded by the lack of rutile\u2010compatible lattice matching. A top\u2010interface\u2010driven stabilization strategy is demonstrated, where a structurally compatible RuO\n                    <jats:sub>2<\/jats:sub>\n                    upper layer stabilizes rutile TiO\n                    <jats:sub>2<\/jats:sub>\n                    at 400\u00b0C regardless of the crystallinity of the underlying ZrO\n                    <jats:sub>2<\/jats:sub>\n                    \/TiN stack. Thickness\u2010dependent phase maps reveal an interfacial\u2010energy\u2010driven anatase\u2010to\u2010rutile transition for thin amorphous TiO\n                    <jats:sub>2<\/jats:sub>\n                    layers, enabling rutile formation even on amorphous ZrO\n                    <jats:sub>2<\/jats:sub>\n                    . The resulting TiO\n                    <jats:sub>2<\/jats:sub>\n                    \/ZrO\n                    <jats:sub>2<\/jats:sub>\n                    \/TiN capacitors exhibit a dielectric constant of approximately 80 and a reduced equivalent oxide thickness, comparable to that of ZrO\n                    <jats:sub>2<\/jats:sub>\n                    \u2010based stacks. A methanol\u2010assisted reduction\u2010etching process allows selective removal of RuO\n                    <jats:sub>2<\/jats:sub>\n                    by O\n                    <jats:sub>3<\/jats:sub>\n                    with minimal TiN oxidation. This top\u2010interface engineering concept offers a substrate\u2010agnostic approach to rutile TiO\n                    <jats:sub>2<\/jats:sub>\n                    that is compatible with DRAM process windows and can be extended to other polymorphic oxides.\n                  <\/jats:p>","DOI":"10.1002\/adma.73040","type":"journal-article","created":{"date-parts":[[2026,4,9]],"date-time":"2026-04-09T11:59:52Z","timestamp":1775735992000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Rutile Without Substrate Limitations: Top\u2010Interface\u2010Driven Crystallization of TiO\n                    <sub>2<\/sub>"],"prefix":"10.1002","volume":"38","author":[{"given":"Jihoon","family":"Jeon","sequence":"first","affiliation":[{"name":"Electronic and Hybrid Materials Research Center Korea Institute of Science and Technology  Seoul Republic of Korea"},{"name":"KU\u2010KIST Graduate School of Converging Science and Technology Korea University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jongseo","family":"Kim","sequence":"additional","affiliation":[{"name":"Electronic and Hybrid Materials Research Center Korea Institute of Science and Technology  Seoul Republic of Korea"},{"name":"KU\u2010KIST Graduate School of Converging Science and Technology Korea University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seungwan","family":"Ye","sequence":"additional","affiliation":[{"name":"Electronic and Hybrid Materials Research Center Korea Institute of Science and Technology  Seoul Republic of Korea"},{"name":"KU\u2010KIST Graduate School of Converging Science and Technology Korea University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8712-7167","authenticated-orcid":false,"given":"Seong Keun","family":"Kim","sequence":"additional","affiliation":[{"name":"Electronic and Hybrid Materials Research Center Korea Institute of Science and Technology  Seoul Republic of Korea"},{"name":"KU\u2010KIST Graduate School of Converging Science and Technology Korea University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,4,9]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41578\u2010019\u20100101\u20108"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563\u2010020\u20100688\u20106"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202511297"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.1600225"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563\u2010024\u201001915\u2010y"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010018\u201004917\u2010y"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aaq0148"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2004.04.055"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1021\/am507065y"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202505427"},{"key":"e_1_2_8_12_1","article-title":"Growth of Atomic Layer\u2010Deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications","volume":"16","author":"Lee J. 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