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However, these weak inter\u2010chain bonds also severely limit carrier mobility. Herein, we demonstrate that Cu doping effectively alleviates this limitation through dual mechanisms. The incorporation of Cu atoms into both substitutional and interstitial sites increases the charge density, directly facilitating electron transport. Concurrently, Cu\u2010doping optimizes carrier concentration at elevated temperatures, reducing band degeneracy and lowering the effective mass, contributing to the improvement in\u00a0high\u2010temperature carrier mobility. This synergistic optimization yields a 135% enhancement in the average power factor between 600 and 800 K, obtaining a maximum\n                    <jats:italic>ZT<\/jats:italic>\n                    of \u223c1.2 at 800 K and an average\n                    <jats:italic>ZT<\/jats:italic>\n                    of \u223c0.85. A single\u2010leg device fabricated from an optimal BiSbSe\n                    <jats:sub>3<\/jats:sub>\n                    \u20100.05Cu sample attains a thermoelectric conversion efficiency of \u223c6.3% under a temperature difference of 475 K. These results validate the Cu\u2010mediated charge\u2010density modulation as an effective strategy for decoupling electron and phonon transport, underscoring the practical promise of this low\u2010cost BiSbSe\n                    <jats:sub>3<\/jats:sub>\n                    \u2010based thermoelctric material.\n                  <\/jats:p>","DOI":"10.1002\/adma.73098","type":"journal-article","created":{"date-parts":[[2026,4,20]],"date-time":"2026-04-20T11:19:19Z","timestamp":1776683959000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Multifunctional Cu Doping Enhances Electron Transport and Thermoelectric Performance in n\u2010Type BiSbSe\n                    <sub>3<\/sub>"],"prefix":"10.1002","volume":"38","author":[{"given":"Sining","family":"Wang","sequence":"first","affiliation":[{"name":"School of Material Science and Engineering Beihang University  Beijing China"},{"name":"International Institute for 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Material Science and Engineering Beihang University  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Siqi","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Material Science and Engineering Beihang University  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1699-1369","authenticated-orcid":false,"given":"Yongxin","family":"Qin","sequence":"additional","affiliation":[{"name":"International Institute for Interdisciplinary and Frontiers Beihang University  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhengguo","family":"Bai","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering Taiyuan University of Science and Technology  Taiyuan 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