{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,17]],"date-time":"2026-07-17T16:09:36Z","timestamp":1784304576030,"version":"3.55.0"},"reference-count":106,"publisher":"Wiley","issue":"35","license":[{"start":{"date-parts":[[2026,5,20]],"date-time":"2026-05-20T00:00:00Z","timestamp":1779235200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,5,20]],"date-time":"2026-05-20T00:00:00Z","timestamp":1779235200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62574123"],"award-info":[{"award-number":["62574123"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"published-print":{"date-parts":[[2026,6]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Emerging ferroelectric non\u2010volatile memories are revolutionizing von Neumann architectures by providing efficient hardware for both AI training and inference. However, as ferroelectric dimensions scale toward the nanoscale, reliable modulation is hindered by interfacial degradation and phase instability, leading to synaptic weight drift and computational inaccuracies. Here, a high\u2010performance ferroelectric\u2010van der Waals transistor (FeFET) for computing\u2010in\u2010memory by integrating a single\u2010crystalline Bi\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>2<\/jats:sub>\n                    Se (BOS) layer into a ferroelectric\/MoS\n                    <jats:sub>2<\/jats:sub>\n                    heterostructure is demonstrated. The implementation of an asymmetrical capacitive stack ensures effective polarization\u2010charge compensation during fine\u2010state switching, achieving precise multi\u2010level weight programming with significantly suppressed carrier fluctuations. Fabricated through a low\u2010temperature process, the BOS\u2010based FeFET exhibits exceptional reliability, including 10\u2010year retention at 85\u00b0C, endurance exceeding 10\n                    <jats:sup>11<\/jats:sup>\n                    cycles, stable 32\u2010state analog switching with 0.9% retention variation over 10\u00a0000\u00a0s, and ultra\u2010low programming error. Atomically smooth heterointerfaces yield high spatial uniformity (7% variation) across the FeFET array, enabling a hardware neural network that achieves 98.5% accuracy in nonlinear classification. Furthermore, by incorporating intrinsic ferroelectric switching variance into the training phase, it is elucidated how device imperfections can be leveraged to reshape learning dynamics in pixel\u2010wise semantic segmentation. This work establishes a comprehensive co\u2010design methodology bridging advanced ferroelectric materials, device engineering, and algorithmic optimization for next\u2010generation neuromorphic computing.\n                  <\/jats:p>","DOI":"10.1002\/adma.73440","type":"journal-article","created":{"date-parts":[[2026,5,21]],"date-time":"2026-05-21T06:47:39Z","timestamp":1779346059000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Stable Analog Weight Programming in Single\u2010Crystalline van der Waals Ferroelectric Transistors for Reliable Computing\u2010in\u2010Memory"],"prefix":"10.1002","volume":"38","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4801-560X","authenticated-orcid":false,"given":"Mengjiao","family":"Li","sequence":"first","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Feng\u2010Shou","family":"Yang","sequence":"additional","affiliation":[{"name":"Institute of Electronics Engineering National Tsing Hua University  Hsinchu Taiwan"},{"name":"Department of Physics National Chung Hsing University  Taichung Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yanan","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chi","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Enlong","family":"Li","sequence":"additional","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingbo","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Che\u2010Yi","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Physics National Chung Hsing University  Taichung Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hefei","family":"Liu","sequence":"additional","affiliation":[{"name":"John A. Paulson School of Engineering and Applied Sciences Harvard University  Massachusetts USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chen","family":"Luo","sequence":"additional","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hsing\u2010Chicn","family":"Chien","sequence":"additional","affiliation":[{"name":"Institute of Electronics Engineering National Tsing Hua University  Hsinchu Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuan\u2010Ming","family":"Chang","sequence":"additional","affiliation":[{"name":"Department of Physics National Chung Hsing University  Taichung Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jan\u2010Chi","family":"Yang","sequence":"additional","affiliation":[{"name":"Department of Physics National Cheng Kung University  Tainan Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chang\u2010Hong","family":"Shen","sequence":"additional","affiliation":[{"name":"College of Semiconductor Research National Tsing Hua University  Hsinchu Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0155-9987","authenticated-orcid":false,"given":"Yu\u2010Lun","family":"Chueh","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National Tsing\u2010Hua University  Hsinchu Taiwan"},{"name":"Department of Physics National Sun Yat\u2010sen University  Kaohsiung Taiwan"},{"name":"College of Semiconductor Research National Tsing-Hua University  Hsinchu Taiwan"},{"name":"Department of Materials Science and Engineering Korea University  Seoul Korea University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0124-1757","authenticated-orcid":false,"given":"Jun","family":"Li","sequence":"additional","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8061-1861","authenticated-orcid":false,"given":"Jianhua","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiunn\u2010Lin","family":"Wu","sequence":"additional","affiliation":[{"name":"Department of Computer Science and Engineering National Chung Hsing University  Taichung Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4909-0310","authenticated-orcid":false,"given":"Po\u2010Wen","family":"Chiu","sequence":"additional","affiliation":[{"name":"Institute of Electronics Engineering National Tsing Hua University  Hsinchu Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yen\u2010Fu","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Physics National Chung Hsing University  Taichung Taiwan"},{"name":"Department of Material Science and Engineering Institute of Nanoscience, I\u2010Center For Advanced Science and Technology (i\u2010CAST) National Chung Hsing University  Taichung Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,5,20]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature24270"},{"key":"e_1_2_9_3_1","volume-title":"Computer Vision\u2010ECCV 2016. Lecture Notes in Computing Science","author":"He K."},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature14539"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2009.2034764"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-0435-7"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-63873-6"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202510646"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-020-0647-z"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1088\/2631-7990\/ae053a"},{"key":"e_1_2_9_11_1","doi-asserted-by":"crossref","unstructured":"T.Gokmen M. J.Rasch andW.Haensch \u201cThe Marriage of Training and Inference for Scaled Deep Learning Analog Hardware \u201d in2019 International Electron Devices Meeting (IEDM)(IEEE 2019) 22\u201323.","DOI":"10.1109\/IEDM19573.2019.8993573"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-017-0002-z"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-023-05759-5"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-023-01343-0"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-023-00950-y"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-023-01676-0"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-46640-x"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-63302-8"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-025-01398-y"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-44759-5"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-021-21320-2"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1186\/s40580-025-00520-2"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3634052"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aba0067"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-019-09669-x"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1145\/3529760"},{"key":"e_1_2_9_27_1","doi-asserted-by":"crossref","unstructured":"H.Bae S. G.Nam T.Moon et\u00a0al. \u201cSub\u2010ns Polarization Switching in 25 nm FE FinFET Toward Post CPU and Spatial\u2010energetic Mapping of Traps for Enhanced Endurance \u201d in2020 IEEE International Electron Devices Meeting (IEDM)(IEEE 2020).","DOI":"10.1109\/IEDM13553.2020.9372076"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202104054"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41699-017-0040-4"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201504779"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-2208-x"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-62827-2"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-023-01399-y"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-023-05797-z"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.9b02312"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1021\/accountsmr.1c00130"},{"key":"e_1_2_9_37_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-47974-2"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5108853"},{"key":"e_1_2_9_39_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-0444-6"},{"key":"e_1_2_9_40_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5c14437"},{"key":"e_1_2_9_41_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.7b03020"},{"key":"e_1_2_9_42_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemrev.4c00845"},{"key":"e_1_2_9_43_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.adi9405"},{"key":"e_1_2_9_44_1","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202300554"},{"key":"e_1_2_9_45_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0090120"},{"key":"e_1_2_9_46_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202310438"},{"key":"e_1_2_9_47_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202400686"},{"key":"e_1_2_9_48_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-68206-1"},{"key":"e_1_2_9_49_1","article-title":"Emerging 2D Ferroelectric Devices for in\u2010Sensor and in\u2010Memory Computing","volume":"36","author":"Chen Y.","year":"2024","journal-title":"Advanced Materials"},{"key":"e_1_2_9_50_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201502677"},{"key":"e_1_2_9_51_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2013.144"},{"key":"e_1_2_9_52_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adk1597"},{"key":"e_1_2_9_53_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201803690"},{"key":"e_1_2_9_54_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-020-16766-9"},{"key":"e_1_2_9_55_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/3\/4\/045015"},{"key":"e_1_2_9_56_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2024.3355523"},{"key":"e_1_2_9_57_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2025.3589546"},{"key":"e_1_2_9_58_1","doi-asserted-by":"crossref","unstructured":"Q.Luo T.Gong Y.Cheng et\u00a0al. \u201cHybrid 1T E\u2010DRAM and E\u2010NVM Realized in One 10 Nm Node Ferro FinFET Device With Charge Trapping and Domain Switching Effects \u201d in2018 IEEE Int. Electron Devices Meeting (IEDM)(IEEE 2018).","DOI":"10.1109\/IEDM.2018.8614650"},{"key":"e_1_2_9_59_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl202983x"},{"key":"e_1_2_9_60_1","unstructured":"IEEE International Roadmap for Devices and Systems (IRDSTM) 2023 Edition (2023) https:\/\/irds.ieee.org\/editions\/2023."},{"key":"e_1_2_9_61_1","doi-asserted-by":"crossref","unstructured":"X.Sun P.Wang K.Ni S.Datta andS.Yu \u201cExploiting Hybrid Precision for Training and Inference: A 2T\u20101FeFET Based Analog Synaptic Weight Cell \u201d in2018 IEEE International Electron Devices Meeting (IEDM)(2018).","DOI":"10.1109\/IEDM.2018.8614611"},{"key":"e_1_2_9_62_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0059-3"},{"key":"e_1_2_9_63_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2020.105686"},{"key":"e_1_2_9_64_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202304657"},{"key":"e_1_2_9_65_1","doi-asserted-by":"publisher","DOI":"10.1007\/s40843-021-1920-9"},{"key":"e_1_2_9_66_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-54114-3"},{"key":"e_1_2_9_67_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-55333-4"},{"key":"e_1_2_9_68_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202003085"},{"key":"e_1_2_9_69_1","doi-asserted-by":"crossref","unstructured":"Z.Wang M. M.Islam P.Wang et\u00a0al. \u201cDepolarization Field Induced Instability of Polarization States in HfO2Based Ferroelectric FET \u201d in2020 IEEE Int. Electron Devices Meeting (IEDM)(IEEE 2020).","DOI":"10.1109\/IEDM13553.2020.9372098"},{"key":"e_1_2_9_70_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2748992"},{"key":"e_1_2_9_71_1","doi-asserted-by":"crossref","unstructured":"K. A.Aabrar J.Read S. G.Kirtania et\u00a0al. \u201cTotal Ionizing Dose Effect in Tri\u2010Gate Silicon Ferroelectric Transistor Memory \u201d in2022 IEEE Int. Electron Devices Meeting (IEDM)(IEEE 2022).","DOI":"10.1109\/IEDM45625.2022.10019566"},{"key":"e_1_2_9_72_1","doi-asserted-by":"crossref","unstructured":"C.Liao K.Hsiang Z.Lou et\u00a0al. \u201cEndurance>1011Cycling of 3D GAA Nanosheet Ferroelectric FET With Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High\u2010density eNVM \u201d in2022 Symposium on VLSI Circuits (VLSI Circuits)(IEEE 2022) 393\u2013394.","DOI":"10.1109\/VLSITechnologyandCir46769.2022.9830345"},{"key":"e_1_2_9_73_1","doi-asserted-by":"crossref","unstructured":"K.Ni J. A.Smith B.Grisafe et\u00a0al. \u201cSoC Logic Compatible Multi\u2010bit FeMFET Weight Cell for Neuromorphic Applications \u201d inIEEE International Electron Devices Meeting (IEDM)(IEEE 2018).","DOI":"10.1109\/IEDM.2018.8614496"},{"key":"e_1_2_9_74_1","doi-asserted-by":"crossref","unstructured":"S.D\u00fcnkel M.Trentzsch R.Richter et\u00a0al. \u201cA FeFET Based Super\u2010low\u2010power Ultra\u2010fast Embedded NVM Technology for 22Nm FDSOI and Beyond \u201d inIEEE International Electron Devices Meeting (IEDM)(IEEE 2017).","DOI":"10.1109\/IEDM.2017.8268425"},{"key":"e_1_2_9_75_1","doi-asserted-by":"crossref","unstructured":"K.Aabrar S. G.Kirtania A.Lu et\u00a0al. \u201cA Thousand state Superlattice (SL) FEFET Analog Weight Cell \u201d in2000 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)(IEEE 2022) 242\u2013243.","DOI":"10.1109\/VLSITechnologyandCir46769.2022.9830333"},{"key":"e_1_2_9_76_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.2c04441"},{"key":"e_1_2_9_77_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4864100"},{"key":"e_1_2_9_78_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-020-15249-1"},{"key":"e_1_2_9_79_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-0441-9"},{"key":"e_1_2_9_80_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-022-28303-x"},{"key":"e_1_2_9_81_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-44927-7"},{"key":"e_1_2_9_82_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms15217"},{"key":"e_1_2_9_83_1","doi-asserted-by":"publisher","DOI":"10.1039\/C4NR03448A"},{"key":"e_1_2_9_84_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2023.109106"},{"key":"e_1_2_9_85_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202105472"},{"key":"e_1_2_9_86_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.9b21747"},{"key":"e_1_2_9_87_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202311630"},{"key":"e_1_2_9_88_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms12725"},{"key":"e_1_2_9_89_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202301067"},{"key":"e_1_2_9_90_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202311652"},{"key":"e_1_2_9_91_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-021-00904-5"},{"key":"e_1_2_9_92_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202308502"},{"key":"e_1_2_9_93_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202201117"},{"key":"e_1_2_9_94_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-57543-w"},{"key":"e_1_2_9_95_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202500221"},{"key":"e_1_2_9_96_1","doi-asserted-by":"publisher","DOI":"10.1002\/inf2.70044"},{"key":"e_1_2_9_97_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-025-01988-z"},{"key":"e_1_2_9_98_1","first-page":"1596","article-title":"Scalable CMOS Back\u2010end\u2010of\u2010line\u2010compatible AlScN\/Two\u2010dimensional Channel Ferroelectric Field\u2010effect Transistors","volume":"20","author":"Kim K.\u2010H.","year":"2025","journal-title":"Nature Nanotechnology"},{"key":"e_1_2_9_99_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202309642"},{"key":"e_1_2_9_100_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202210628"},{"key":"e_1_2_9_101_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202201005"},{"key":"e_1_2_9_102_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-022-29727-1"},{"key":"e_1_2_9_103_1","doi-asserted-by":"publisher","DOI":"10.26599\/NR.2025.94907023"},{"key":"e_1_2_9_104_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.cej.2025.166292"},{"key":"e_1_2_9_105_1","volume-title":"Neural Networks and Learning Machines","author":"Haykin S. O.","year":"2009"},{"key":"e_1_2_9_106_1","doi-asserted-by":"crossref","unstructured":"P.Chen X.Peng andS.Yu \u201cNeuroSim+: An Integrated Device\u2010to\u2010 Algorithm Framework for Benchmarking Synaptic Devices and Array Architectures \u201d inIEEE International Electron Devices Meeting (IEDM)(IEEE 2017).","DOI":"10.1109\/IEDM.2017.8268337"},{"key":"e_1_2_9_107_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-1942-4"}],"container-title":["Advanced Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/adma.73440","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/adma.73440","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/adma.73440","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,7,17]],"date-time":"2026-07-17T15:57:51Z","timestamp":1784303871000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/adma.73440"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,5,20]]},"references-count":106,"journal-issue":{"issue":"35","published-print":{"date-parts":[[2026,6]]}},"alternative-id":["10.1002\/adma.73440"],"URL":"https:\/\/doi.org\/10.1002\/adma.73440","archive":["Portico"],"relation":{},"ISSN":["0935-9648","1521-4095"],"issn-type":[{"value":"0935-9648","type":"print"},{"value":"1521-4095","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,5,20]]},"assertion":[{"value":"2026-03-06","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-05-12","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-05-20","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e73440"}}