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However, its passivation performance remains constrained by the thermal fragility of the ultrathin silicon dioxide (SiO\n                    <jats:sub>x<\/jats:sub>\n                    ) interface and the resulting formation of pinholes. Here, we report a nitrogen (N)\u2010incorporated TOPCon structure in which nitrogen (N) atoms are in situ doped into amorphous silicon via plasma\u2010enhanced chemical vapor deposition (PECVD) and are driven to the SiO\n                    <jats:sub>x<\/jats:sub>\n                    during annealing to form a robust SiO\n                    <jats:sub>x<\/jats:sub>\n                    N\n                    <jats:sub>y<\/jats:sub>\n                    interlayer. First\u2010principles calculations reveal that SiO\n                    <jats:sub>x<\/jats:sub>\n                    N\n                    <jats:sub>y<\/jats:sub>\n                    exhibits significantly enhanced bonding strength and superior thermal stability. Finite element simulations further show that SiO\n                    <jats:sub>x<\/jats:sub>\n                    N\n                    <jats:sub>y<\/jats:sub>\n                    possesses a thermal expansion coefficient better matched to both c\u2010Si and poly\u2010Si, suppressing stress concentration, preventing interface fracture, and reducing pinhole density. This atomic\u2010scale modification enables record\u2010breaking passivation performance, achieving an implied open\u2010circuit voltage of 760\u00a0mV and a low single\u2010sided recombination current density of 0.35 fA\/cm\n                    <jats:sup>2<\/jats:sup>\n                    . Device simulations predict that the efficiencies of various TOPCon\u2010based cells can be significantly enhanced with minimal additional cost. Experimental data demonstrate that front\u2010junction TOPCon cells can achieve an efficiency improvement of 0.2%. This simple and industry\u2010compatible interface\u2010engineering strategy provides a highly scalable pathway for boosting TOPCon and back\u2010contact TOPCon solar cells\u2019 performances.\n                  <\/jats:p>","DOI":"10.1002\/adma.73918","type":"journal-article","created":{"date-parts":[[2026,7,8]],"date-time":"2026-07-08T05:17:26Z","timestamp":1783487846000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Nitrogen\u2010Incorporated Silicon Dioxide Interlayer Enables Pinhole\u2010Reduced and Robust TOPCon With a High Implied Open\u2010Circuit Voltage over 760\u00a0mV"],"prefix":"10.1002","volume":"38","author":[{"given":"Zunke","family":"Liu","sequence":"first","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences (CAS)  Ningbo P. R. 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