{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,8]],"date-time":"2026-10-08T08:57:25Z","timestamp":1791449845351,"version":"4.3.3"},"reference-count":55,"publisher":"Wiley","issue":"45","license":[{"start":{"date-parts":[[2026,7,5]],"date-time":"2026-07-05T00:00:00Z","timestamp":1783209600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by-nc\/4.0\/"},{"start":{"date-parts":[[2026,7,5]],"date-time":"2026-07-05T00:00:00Z","timestamp":1783209600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"published-print":{"date-parts":[[2026,8]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    We uncover the electronic origin of hidden interfacial doping in monolayer MoS\n                    <jats:sub>2<\/jats:sub>\n                    single\u2010crystal wafers grown on sapphire by metal\u2013organic chemical vapor deposition (MOCVD) and establish a transfer\u2010free top\u2010gate device platform. Despite structural perfection, as\u2010fabricated devices exhibit degenerate electron doping and lack a clear off state. Hall measurements quantify an interfacial electron density of 2.7 \u00d7 10\n                    <jats:sup>12<\/jats:sup>\n                    cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    , evidencing substantial charge transfer across the nominal van der Waals interface. Interface\u2010sensitive spectroscopy, lateral force microscopy, and thermal desorption analysis reveal a buried sulfate\u2010derived layer accompanied by a water\u2010like interfacial structure that acts as an intrinsic electron donor. A purely dry H\n                    <jats:sub>2<\/jats:sub>\n                    \/Ar annealing process selectively removes these species, suppressing charge transfer and restoring intrinsic FET characteristics without transfer or wet processing. Through this dry interface engineering approach, we demonstrate MOCVD\u2010grown single\u2010crystal MoS\n                    <jats:sub>2<\/jats:sub>\n                    wafers as a robust, transfer\u2010free platform for the reliable evaluation of intrinsic gate stacks and device performance.\n                  <\/jats:p>","DOI":"10.1002\/adma.73931","type":"journal-article","created":{"date-parts":[[2026,7,6]],"date-time":"2026-07-06T06:42:18Z","timestamp":1783320138000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["MOCVD\u2010Grown MoS\n                    <sub>2<\/sub>\n                    Wafers as a Transfer\u2010Free Platform for Top\u2010Gate Devices via Dry Interface Engineering"],"prefix":"10.1002","volume":"38","author":[{"given":"Shuhong","family":"Li","sequence":"first","affiliation":[{"name":"Department of Materials Engineering The University of Tokyo  Bunkyo Tokyo Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Juiteng","family":"Chang","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering The University of Tokyo  Bunkyo Tokyo Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Keisuke","family":"Atsumi","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering The University of Tokyo  Bunkyo Tokyo Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kosei","family":"Matsumoto","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering The University of Tokyo  Bunkyo Tokyo Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Itsuki","family":"Tanaka","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering The University of Tokyo  Bunkyo Tokyo Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tomonori","family":"Nishimura","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering The University of Tokyo  Bunkyo Tokyo Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kaito","family":"Kanahashi","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering The University of Tokyo  Bunkyo Tokyo Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8591-2943","authenticated-orcid":false,"given":"Takahiro","family":"Nagata","sequence":"additional","affiliation":[{"name":"Research Center for Electronic and Optical Materials National Institute for Materials Science  Tsukuba Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jun","family":"Nara","sequence":"additional","affiliation":[{"name":"Research Center for Materials Nanoarchitectonics National Institute for Materials Science  Tsukuba Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yoshiki","family":"Sakuma","sequence":"additional","affiliation":[{"name":"Research Center for Electronic and Optical Materials National Institute for Materials Science  Tsukuba Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Emi","family":"Kano","sequence":"additional","affiliation":[{"name":"Institute of Materials and Systems for Sustainability Nagoya University  Nagoya Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nobuyuki","family":"Ikarashi","sequence":"additional","affiliation":[{"name":"Institute of Materials and Systems for Sustainability Nagoya University  Nagoya Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1181-8644","authenticated-orcid":false,"given":"Kosuke","family":"Nagashio","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering The University of Tokyo  Bunkyo Tokyo Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,7,5]]},"reference":[{"key":"e_1_2_7_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s44287\u2010024\u201000038\u20105"},{"key":"e_1_2_7_3_1","doi-asserted-by":"crossref","unstructured":"A.\u2010S.Chou Y.\u2010T.Lin Y. C.Lin et al. \u201cHigh\u2010Performance Monolayer WSe2 p\/n FETs via Antimony\u2010Platinum Modulated Contact Technology towards 2D CMOS Electronics \u201d in2022 International Electron Devices Meeting (IEDM)(2022) 7.2.1\u20137.2.4 https:\/\/doi.org\/10.1109\/IEDM45625.2022.10019491.","DOI":"10.1109\/IEDM45625.2022.10019491"},{"key":"e_1_2_7_4_1","doi-asserted-by":"crossref","unstructured":"W.Mortelmans P.Buragohain A.Kitamura et al. \u201cGate Oxide Module Development for Scaled GAA 2D FETs Enabling SS<;75mV\/d and Record Idmax>;900\u00b5A\/\u00b5m at Lg\u232950nm \u201d in2024 IEEE International Electron Devices Meeting (IEDM) (2024) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM50854.2024.10873417.","DOI":"10.1109\/IEDM50854.2024.10873417"},{"key":"e_1_2_7_5_1","doi-asserted-by":"crossref","unstructured":"C.Kim J.Kwon M. S.Yoo et\u00a0al. \u201cTransfer Free 2D CMOS Multi Bridge Channel FET \u201d in2024 IEEE International Electron Devices Meeting (IEDM) (2024) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM50854.2024.10873503.","DOI":"10.1109\/IEDM50854.2024.10873503"},{"key":"e_1_2_7_6_1","doi-asserted-by":"crossref","unstructured":"K.Maxey C. H.Naylor K. 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