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However, strategies that enable the low\u2010temperature growth of high\u2010quality films, and the exfoliation of freestanding membranes are still lacking, largely hindering integration in functional devices. Here, we demonstrate the growth of high\u2010quality AlScN films at the low temperature of 150\u00b0C on substrates with distinct crystal symmetries, achieved by using a two\u2010dimensional transition metal dichalcogenide (TMDC) monolayer as a buffer. The high crystallinity is stemmed from the quasi\u2010van der Waals epitaxy, which is universally demonstrated on a wide range of TMDC materials. The TMDC buffers further enable the fabrication of freestanding AlScN membranes, exhibiting excellent ferroelectric properties including high remanent polarization, low leakage current and rapid switching kinetics. Our findings provide a low\u2010thermal\u2010budget approach with high integration flexibility to develop wurtzite\u2010based ferroelectric, piezoelectric, and electro\u2010optic devices.<\/jats:p>","DOI":"10.1002\/adma.74106","type":"journal-article","created":{"date-parts":[[2026,7,14]],"date-time":"2026-07-14T13:15:59Z","timestamp":1784034959000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Low Temperature Growth of High\u2010Quality Wurtzite Ferroelectric Through Quasi\u2010van der Waals Epitaxy"],"prefix":"10.1002","volume":"38","author":[{"given":"Yiming","family":"Yang","sequence":"first","affiliation":[{"name":"State Key Lab of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zonglin","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Lab of New Ceramics and 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