{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,20]],"date-time":"2026-07-20T11:08:04Z","timestamp":1784545684132,"version":"3.55.0"},"reference-count":59,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,7,20]],"date-time":"2026-07-20T00:00:00Z","timestamp":1784505600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,7,20]],"date-time":"2026-07-20T00:00:00Z","timestamp":1784505600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    2D van der Waals (vdW) magnets provide new opportunities for spin\u2013orbit torque magnetoresistive random\u2010access memory (SOT\u2010MRAM) due to their unique properties. Electrically manipulating the magnetization of vdW magnets is key to realizing 2D SOT\u2010MRAM, whereas conventional spin Hall materials such as heavy metals and topological insulators suffer from limitations in torque efficiency and energy consumption. Although recent studies show that the orbital Hall conductivity in light metals greatly exceeds the spin Hall conductivity, direct experimental demonstrations that the orbital Hall effect (OHE) can induce more energy\u2010efficient SOT switching than the spin Hall effect in vdW magnets remain scarce. Here, we utilize Cr as the orbital current source to efficiently manipulate the magnetization of the vdW ferromagnet Fe\n                    <jats:sub>3<\/jats:sub>\n                    GaTe\n                    <jats:sub>2<\/jats:sub>\n                    at room temperature. In the Fe\n                    <jats:sub>3<\/jats:sub>\n                    GaTe\n                    <jats:sub>2<\/jats:sub>\n                    \/Pt (1.5\u00a0nm)\/Cr (4.5\u00a0nm) trilayer structure, the orbital current originating from Cr is converted into the spin current via Pt, which then exerts a torque on Fe\n                    <jats:sub>3<\/jats:sub>\n                    GaTe\n                    <jats:sub>2<\/jats:sub>\n                    . Compared with control samples using 6\u00a0nm Pt as the spin current source, the switching current density in OHE\u2010based devices is reduced by \u223c3.9 times, resulting in a \u223c52% reduction in power consumption. This work presents the promising potential of harnessing orbital currents to realize energy\u2010efficient 2D SOT\u2010MRAM.\n                  <\/jats:p>","DOI":"10.1002\/adma.74214","type":"journal-article","created":{"date-parts":[[2026,7,20]],"date-time":"2026-07-20T10:54:06Z","timestamp":1784544846000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Harnessing the Orbital Hall Effect for Energy\u2010Efficient Magnetization Switching in the Room\u2010Temperature van der Waals Ferromagnet Fe\n                    <sub>3<\/sub>\n                    GaTe\n                    <sub>2<\/sub>"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0124-6315","authenticated-orcid":false,"given":"Chenhui","family":"Zhang","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering National University of Singapore  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hua","family":"Bai","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering National University of Singapore  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuchen","family":"Pu","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering National University of Singapore  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0907-2898","authenticated-orcid":false,"given":"Hyunsoo","family":"Yang","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering National University of Singapore  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,7,20]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010022\u201004768\u20100"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature22060"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010018\u20100626\u20109"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010022\u201032605\u20105"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010023\u201040714\u2010y"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature10309"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1218197"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/tmag.2021.3078583"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aaw8904"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.9b01043"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3973"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature13534"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.114.257202"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010017\u201001583\u20104"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1038\/nphys3933"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202000513"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010023\u201001039\u20102"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adg9819"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202400893"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adk8669"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202406464"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010025\u201064109\u20103"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5041793"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1021\/accountsmr.2c00123"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.95.066601"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.102.016601"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.121.086602"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010023\u201006101\u20109"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010024\u201001193\u20101"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.131.156702"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42005\u2010021\u201000737\u20107"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevResearch.5.023054"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201052824\u20102"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201045109\u20101"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201055437\u2010x"},{"key":"e_1_2_9_37_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.6.095001"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202425932"},{"key":"e_1_2_9_39_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.3c02104"},{"key":"e_1_2_9_40_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563\u2010025\u201002326\u20103"},{"key":"e_1_2_9_41_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010025\u201062333\u20105"},{"key":"e_1_2_9_42_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42005\u2010023\u201001139\u20107"},{"key":"e_1_2_9_43_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4898593"},{"key":"e_1_2_9_44_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.109.174435"},{"key":"e_1_2_9_45_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.125.177201"},{"key":"e_1_2_9_46_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201048799\u20109"},{"key":"e_1_2_9_47_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.4c06518"},{"key":"e_1_2_9_48_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202303688"},{"key":"e_1_2_9_49_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0050483"},{"key":"e_1_2_9_50_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adj3955"},{"key":"e_1_2_9_51_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202400143"},{"key":"e_1_2_9_52_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201045586\u20104"},{"key":"e_1_2_9_53_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.89.024418"},{"key":"e_1_2_9_54_1","doi-asserted-b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