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However, current dielectrics often exhibit advantages in only one of these two aspects, which limits the further improvement of transistor performance. This study demonstrates an ideal dielectric NH\n                    <jats:sub>4<\/jats:sub>\n                    Be\n                    <jats:sub>2<\/jats:sub>\n                    BO\n                    <jats:sub>3<\/jats:sub>\n                    F\n                    <jats:sub>2<\/jats:sub>\n                    (ABBF) for 2D electronic devices, which exhibit a high dielectric constant up to 39 and a wide bandgap of 8.1\u00a0eV. Dielectric performance tests show that it has an ultralow leakage current density (\u2248 10\n                    <jats:sup>\u22128<\/jats:sup>\n                    A cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    ) and a robust breakdown field (12.6 MV cm\n                    <jats:sup>\u22121<\/jats:sup>\n                    ). The MoS\n                    <jats:sub>2<\/jats:sub>\n                    field\u2010effect transistors (FETs) gated by ABBF achieve a high on\/off ratio of 2 \u00d7 10\n                    <jats:sup>9<\/jats:sup>\n                    , near\u2010Boltzmann\u2010limit subthreshold swing (60\u00a0mV dec\n                    <jats:sup>\u22121<\/jats:sup>\n                    ), and negligible hysteresis of 2.7\u00a0mV. Benefiting from its inert vdW surface, ABBF forms a high\u2010quality MoS\n                    <jats:sub>2<\/jats:sub>\n                    \/ABBF interface with an extremely low density of trap states (\n                    <jats:italic>D<\/jats:italic>\n                    <jats:sub>it<\/jats:sub>\n                    \u2248 4.6 \u00d7 10\n                    <jats:sup>10<\/jats:sup>\n                    cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    eV\n                    <jats:sup>\u22121<\/jats:sup>\n                    ). In addition, high\u2010\u03ba ABBF dielectrics were also applied for fabricating short\u2010channel MoS\n                    <jats:sub>2<\/jats:sub>\n                    FETs and high\u2010gain logic inverters. This research enlarges the pool of dielectric candidates and unlocks new possibilities for advancing low\u2010power electronics and integrated circuits.\n                  <\/jats:p>","DOI":"10.1002\/adma.74329","type":"journal-article","created":{"date-parts":[[2026,7,25]],"date-time":"2026-07-25T21:26:36Z","timestamp":1785014796000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Integration of High\u2010\u03ba and Ultrawide Bandgap Single\u2010Crystalline Beryllium Borate Dielectric for 2D Electronics"],"prefix":"10.1002","volume":"38","author":[{"given":"Heng","family":"He","sequence":"first","affiliation":[{"name":"State Key Laboratory of Materials Processing and Die &amp; Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology  Wuhan 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