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Here, we introduce degenerately doped, crystalline SnSe\n                    <jats:sub>2<\/jats:sub>\n                    as a universal source\u2010side van der Waals (vdW) injector capable of enforcing all\u2010tunneling carrier injection into both\n                    <jats:italic>p<\/jats:italic>\n                    \u2010 and\n                    <jats:italic>n<\/jats:italic>\n                    \u2010type monolayer channels. The combination of a large electron affinity (\u223c5.1\u00a0eV), degenerate carrier density (&gt;10\n                    <jats:sup>19<\/jats:sup>\n                    cm\n                    <jats:sup>\u22123<\/jats:sup>\n                    ), and atomically uniform vdW interfacial coupling enables polarity\u2010tailored tunneling mechanisms while effectively suppressing interfacial gap states. In\n                    <jats:italic>p<\/jats:italic>\n                    \u2010type WSe\n                    <jats:sub>2<\/jats:sub>\n                    , a type\u2010III (broken gap) alignment drives efficient band\u2010to\u2010band tunneling, yielding a &gt;1000\u2010fold enhancement in drive current over conventional metal electrodes. In\n                    <jats:italic>n<\/jats:italic>\n                    \u2010type MoS\n                    <jats:sub>2<\/jats:sub>\n                    , the SnSe\n                    <jats:sub>2<\/jats:sub>\n                    injector forms a type\u2010I heterojunction within the sub\u2010depletion\u2010width monolayer body, enabling a gate\u2010tunable injection that evolves from field\u2010controlled Fowler\u2013Nordheim\u2010like tunneling to thickness\u2010limited tunneling, achieving an on\/off ratio &gt;\u00a010\n                    <jats:sup>9<\/jats:sup>\n                    and a subthreshold swing below 70\u00a0mV dec\n                    <jats:sup>\u22121<\/jats:sup>\n                    . Integrating this single\u2010material injector, we demonstrate a monolayer CMOS inverter with a maximum voltage gain of \u223c340 at\n                    <jats:italic>V<\/jats:italic>\n                    <jats:sub>DD<\/jats:sub>\n                    = 2\u00a0V, establishing degenerate SnSe\n                    <jats:sub>2<\/jats:sub>\n                    as a dual\u2010polarity vdW injector and providing a platform for high\u2010performance, low\u2010power 2D integrated circuits.\n                  <\/jats:p>","DOI":"10.1002\/adma.74597","type":"journal-article","created":{"date-parts":[[2026,8,12]],"date-time":"2026-08-12T07:40:35Z","timestamp":1786520435000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["A Universal van der Waals Tunneling Injector for Monolayer CMOS"],"prefix":"10.1002","volume":"38","author":[{"ORCID":"https:\/\/orcid.org\/0009-0000-0379-4158","authenticated-orcid":false,"given":"Hanbin","family":"Cho","sequence":"first","affiliation":[{"name":"Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST)  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4714-5744","authenticated-orcid":false,"given":"Jing","family":"Huang","sequence":"additional","affiliation":[{"name":"Beijing Computational Science Research Center  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seonguk","family":"Yang","sequence":"additional","affiliation":[{"name":"Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST)  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-5263-6184","authenticated-orcid":false,"given":"Subin","family":"Im","sequence":"additional","affiliation":[{"name":"Center for Semiconductor Technology Korea Institute of Science and Technology  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sangwoo","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jeongin","family":"Yeo","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Ulsan National Institute of Science and Technology  Ulsan Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sungyeon","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Ulsan National Institute of Science and Technology  Ulsan Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-6782-8534","authenticated-orcid":false,"given":"Gilhwan","family":"Do","sequence":"additional","affiliation":[{"name":"Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST)  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenxuan","family":"Zhu","sequence":"additional","affiliation":[{"name":"Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST)  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-6687-8232","authenticated-orcid":false,"given":"Soobeom","family":"Shin","sequence":"additional","affiliation":[{"name":"Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology  Ulsan Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1735-2497","authenticated-orcid":false,"given":"Jongwon","family":"Lee","sequence":"additional","affiliation":[{"name":"Semiconductor R&amp;D Center Samsung Electronics Co., Ltd.  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