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However, the high thermal budget required for synthesis and post\u2010annealing processes hampers scalable integration and degrades interfacial quality. Here, we present a freestanding hafnium\u2010based ferroelectric strategy that enables the fabrication of high\u2010performance top\u2010gate ferroelectric field\u2010effect transistors (FeFETs) on van der Waals (vdW) MoS\n                    <jats:sub>2<\/jats:sub>\n                    channels at low temperatures without post\u2010annealing. The freestanding Hf\n                    <jats:sub>0.5<\/jats:sub>\n                    Zr\n                    <jats:sub>0.5<\/jats:sub>\n                    O\n                    <jats:sub>2<\/jats:sub>\n                    (FS\u2010HZO) FeFETs, featuring a metal\u2013ferroelectric\u2013metal\u2013insulator\u2013semiconductor (MFMIS) architecture, exhibit a pronounced anticlockwise normalized memory window of 0.56 V nm\n                    <jats:sup>\u22121<\/jats:sup>\n                    . They demonstrate proof\u2010of\u2010concept nonvolatile behavior with endurance exceeding 2\u00a0\u00d7\u00a010\n                    <jats:sup>3<\/jats:sup>\n                    cycles, retention over 2\u00a0\u00d7\u00a010\n                    <jats:sup>3<\/jats:sup>\n                    s, and stable operation up to 85\u00b0C, maintaining an on\/off ratio of 10\n                    <jats:sup>6<\/jats:sup>\n                    and an extrapolated value of 10\n                    <jats:sup>4<\/jats:sup>\n                    after 10 years. Precise ferroelectric control of the MoS\n                    <jats:sub>2<\/jats:sub>\n                    channel conductance enables multilevel switching and synaptic plasticity, achieving high accuracy in image recognition tasks. This work provides a low\u2010thermal\u2010budget freestanding hafnium\u2010based integration strategy and a device\u2010level building block for future vdW FeFET arrays, offering a promising pathway toward energy\u2010efficient compute\u2010in\u2010memory and neuromorphic architectures.\n                  <\/jats:p>","DOI":"10.1002\/adma.74847","type":"journal-article","created":{"date-parts":[[2026,8,30]],"date-time":"2026-08-30T07:02:46Z","timestamp":1788073366000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Thermal\u2010Budget\u2010Decoupled Integration of Freestanding Hafnium\u2010Based Ferroelectric Dielectrics for van der Waals Memory Transistors"],"prefix":"10.1002","author":[{"given":"Song","family":"Zhao","sequence":"first","affiliation":[{"name":"School of Microelectronics Shanghai University  Jiading Shanghai 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