{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,5]],"date-time":"2026-09-05T18:11:33Z","timestamp":1788631893404,"version":"build-2803163510"},"reference-count":55,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,5]],"date-time":"2026-09-05T00:00:00Z","timestamp":1788566400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,9,5]],"date-time":"2026-09-05T00:00:00Z","timestamp":1788566400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52472168"],"award-info":[{"award-number":["52472168"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52502161"],"award-info":[{"award-number":["52502161"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52502048"],"award-info":[{"award-number":["52502048"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["22442025"],"award-info":[{"award-number":["22442025"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2023YFB3609001"],"award-info":[{"award-number":["2023YFB3609001"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2021YFA0717900"],"award-info":[{"award-number":["2021YFA0717900"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006606","name":"Natural Science Foundation of Tianjin Municipality","doi-asserted-by":"publisher","award":["22JCJQJC00080"],"award-info":[{"award-number":["22JCJQJC00080"]}],"id":[{"id":"10.13039\/501100006606","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006606","name":"Natural Science Foundation of Tianjin Municipality","doi-asserted-by":"publisher","award":["25JCYBJC00140"],"award-info":[{"award-number":["25JCYBJC00140"]}],"id":[{"id":"10.13039\/501100006606","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100021171","name":"Basic and Applied Basic Research Foundation of Guangdong Province","doi-asserted-by":"publisher","award":["2026A1515012407"],"award-info":[{"award-number":["2026A1515012407"]}],"id":[{"id":"10.13039\/501100021171","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100015644","name":"Seed Foundation of Tianjin University","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100015644","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    The intrinsic physical anisotropy of low\u2010symmetry materials makes them highly promising candidates for polarization\u2010sensitive devices. However, their practical application remains constrained by the scarcity of single materials that can combine low symmetry with high performance. Here, we report a novel low\u2010symmetry [Bi\n                    <jats:sub>2<\/jats:sub>\n                    CuO\n                    <jats:sub>3<\/jats:sub>\n                    ]SO\n                    <jats:sub>4<\/jats:sub>\n                    crystal with an insulating nature, designed to enable symmetry control over conventional high\u2010performance semiconductors. We achieve controllable growth of layered [Bi\n                    <jats:sub>2<\/jats:sub>\n                    CuO\n                    <jats:sub>3<\/jats:sub>\n                    ]SO\n                    <jats:sub>4<\/jats:sub>\n                    nanosheets via a gradient\u2010mass\u2010transfer\u2010assisted chemical vapor deposition method, with thicknesses down to 1.43\u00a0nm. Alternating [Bi\n                    <jats:sub>2<\/jats:sub>\n                    CuO\n                    <jats:sub>3<\/jats:sub>\n                    ]\n                    <jats:sup>2+<\/jats:sup>\n                    cationic layers and SO\n                    <jats:sub>4<\/jats:sub>\n                    <jats:sup>2\u2212<\/jats:sup>\n                    anionic layers, coupled with disparate ionic radii of Bi\n                    <jats:sup>3+<\/jats:sup>\n                    and Cu\n                    <jats:sup>2+<\/jats:sup>\n                    , endow the [Bi\n                    <jats:sub>2<\/jats:sub>\n                    CuO\n                    <jats:sub>3<\/jats:sub>\n                    ]SO\n                    <jats:sub>4<\/jats:sub>\n                    material with low structural symmetry, resulting in pronounced in\u2010plane optical anisotropy. Upon integration with high\u2010symmetry MoS\n                    <jats:sub>2<\/jats:sub>\n                    , [Bi\n                    <jats:sub>2<\/jats:sub>\n                    CuO\n                    <jats:sub>3<\/jats:sub>\n                    ]SO\n                    <jats:sub>4<\/jats:sub>\n                    induces interfacial symmetry breaking, driven by strong interfacial coupling and substantial charge redistribution. Notably, by fabricating devices along different crystallographic orientations of [Bi\n                    <jats:sub>2<\/jats:sub>\n                    CuO\n                    <jats:sub>3<\/jats:sub>\n                    ]SO\n                    <jats:sub>4<\/jats:sub>\n                    , tunable polarization ratios are exhibited, reaching a maximum of 5.44 along the\n                    <jats:italic>a<\/jats:italic>\n                    \u2010axis and a minimum of 1.57 along the\n                    <jats:italic>b<\/jats:italic>\n                    \u2010axis. This work establishes a reliable strategy for obtaining heterostructures with low symmetry and tunable anisotropy, advancing next\u2010generation directional optoelectronic devices.\n                  <\/jats:p>","DOI":"10.1002\/adma.74908","type":"journal-article","created":{"date-parts":[[2026,9,5]],"date-time":"2026-09-05T17:17:36Z","timestamp":1788628656000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Gradient\u2010Mass\u2010Transfer Synthesis of 2D [Bi\n                    <sub>2<\/sub>\n                    CuO\n                    <sub>3<\/sub>\n                    ]SO\n                    <sub>4<\/sub>\n                    Crystals for Anisotropy Engineering"],"prefix":"10.1002","author":[{"given":"Qiao","family":"Meng","sequence":"first","affiliation":[{"name":"State Key Laboratory of Advanced Materials for Intelligent Sensing Ministry of Science and Technology &amp; Key Laboratory of Organic Integrated Circuit Ministry of Education &amp; Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University  Tianjin P. R. China"},{"name":"College of Chemistry Tianjin Normal University  Tianjin P. R. China"},{"name":"Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-6184-6469","authenticated-orcid":false,"given":"Xianfeng","family":"Shen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Materials for Intelligent Sensing Ministry of Science and Technology &amp; Key Laboratory of Organic Integrated Circuit Ministry of Education &amp; Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shijia","family":"Tan","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Materials for Intelligent Sensing Ministry of Science and Technology &amp; Key Laboratory of Organic Integrated Circuit Ministry of Education &amp; Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University  Tianjin P. R. China"},{"name":"Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junhong","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of Semiconductors Chinese Academy of Sciences  Beijing P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yongjing","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measuring Technology and Instruments Tianjin University  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wanfu","family":"Shen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measuring Technology and Instruments Tianjin University  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0178-5167","authenticated-orcid":false,"given":"Rongjin","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Materials for Intelligent Sensing Ministry of Science and Technology &amp; Key Laboratory of Organic Integrated Circuit Ministry of Education &amp; Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6237-0993","authenticated-orcid":false,"given":"Zhongming","family":"Wei","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of Semiconductors Chinese Academy of Sciences  Beijing P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-3688-1852","authenticated-orcid":false,"given":"Lin","family":"Li","sequence":"additional","affiliation":[{"name":"College of Chemistry Tianjin Normal University  Tianjin P. R. China"},{"name":"Key Laboratory of Advanced Intelligent Protective Equipment Technology (Hebei University of Technology) Ministry of Education  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9151-2727","authenticated-orcid":false,"given":"Qing","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Materials for Intelligent Sensing Ministry of Science and Technology &amp; Key Laboratory of Organic Integrated Circuit Ministry of Education &amp; Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University  Tianjin P. R. China"},{"name":"Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6224-6426","authenticated-orcid":false,"given":"Dechao","family":"Geng","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Materials for Intelligent Sensing Ministry of Science and Technology &amp; Key Laboratory of Organic Integrated Circuit Ministry of Education &amp; Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University  Tianjin P. R. China"},{"name":"Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)  Tianjin P. R. China"},{"name":"Haihe Laboratory of Sustainable Chemical Transformations  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,9,5]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms7991"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201600166"},{"key":"e_1_2_9_4_1","doi-asserted-by":"crossref","first-page":"2302","DOI":"10.1038\/s41467-019-10256-3","article-title":"Gate Tunable Giant Anisotropic Resistance in Ultrathin GaTe","volume":"10","author":"Wang H.","year":"2019","journal-title":"Nature Communications"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563\u2010020\u20100730\u20108"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010020\u20102049\u20107"},{"key":"e_1_2_9_7_1","doi-asserted-by":"crossref","DOI":"10.1002\/smm2.1177","article-title":"Chemical Vapor Deposition for Few\u2010Layer Two\u2010Dimensional Materials","volume":"4","author":"Zhang Q.","year":"2023","journal-title":"SmartMat"},{"key":"e_1_2_9_8_1","article-title":"Anisotropic Optoelectronic Synapses in 2D Nb2GeTe4 for Direction\u2010Programmable Neuromorphic Perception and Decision\u2010Making","volume":"37","author":"Zeng T.","year":"2025","journal-title":"Advanced Materials"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.4c01202"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202513984"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1002\/lpor.202500255"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202502580"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.112"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms5458"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.8b06629"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202101017"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202208600"},{"key":"e_1_2_9_18_1","doi-asserted-by":"crossref","first-page":"887","DOI":"10.3390\/min10100887","article-title":"Expanding Family of Litharge\u2010Derived Sulfate Minerals and Synthetic Compounds: Preparation and Crystal Structures of [Bi2CuO3]SO4 and [Ln2O2]SO4 (Ln = Dy and Ho)","volume":"10","author":"Siidra O.","year":"2020","journal-title":"Minerals"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201605785"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aat4229"},{"key":"e_1_2_9_21_1","doi-asserted-by":"crossref","DOI":"10.1002\/adma.201903498","article-title":"Strong and Tunable Electrical Anisotropy in Type\u2010II Weyl Semimetal Candidate WP2 with Broken Inversion Symmetry","volume":"31","author":"Su B.","year":"2019","journal-title":"Advanced Materials"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010020\u20100427\u20107"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010019\u20100547\u20102"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpclett.7b01029"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.fmre.2021.11.020"},{"key":"e_1_2_9_26_1","doi-asserted-by":"crossref","first-page":"1637","DOI":"10.1007\/s40242-025-5226-2","article-title":"Symmetry\u2010Induced Growth of Two\u2010Dimensional Ferromagnetic \u03b3\u2010Fe2O3","volume":"41","author":"Zhang R.","year":"2025","journal-title":"Chemical Research in Chinese Universities"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.31635\/ccschem.022.202202487"},{"key":"e_1_2_9_28_1","doi-asserted-by":"crossref","DOI":"10.1002\/adma.202502784","article-title":"Anomalous Reconfigurable\u2010Transport in MoS2 Transistors by Electrically\u2010Switchable Van Der Waals Interfacial Dipole","volume":"37","author":"Zheng S.","year":"2025","journal-title":"Advanced Materials"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010025\u201056113\u20104"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202517441"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.ado6538"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.26599\/NR.2025.94907478"},{"key":"e_1_2_9_33_1","doi-asserted-by":"crossref","DOI":"10.1002\/adfm.202306682","article-title":"Non\u2010Volatile Reconfigurable p\u2010n Junction Utilizing in\u2010Plane Ferroelectricity in 2D WSe2\/\u03b1\u2010In2Se3 Asymmetric Heterostructures","volume":"34","author":"Uzhansky M.","year":"2023","journal-title":"Advanced Functional Materials"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1038\/nphys2272"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1038\/natrevmats.2016.42"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42254\u2010018\u20100016\u20100"},{"key":"e_1_2_9_37_1","doi-asserted-by":"crossref","first-page":"353","DOI":"10.1038\/s41586-020-2085-3","article-title":"Simulation of Hubbard Model Physics in WSe2\/WS2 Moire Superlattices","volume":"579","author":"Tang Y. H.","year":"2020","journal-title":"Nature"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010020\u20102191\u20102"},{"key":"e_1_2_9_39_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010023\u201041295\u20106"},{"key":"e_1_2_9_40_1","doi-asserted-by":"crossref","DOI":"10.1002\/adma.202405358","article-title":"Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors","volume":"37","author":"Tang Y.","year":"2025","journal-title":"Advanced Materials"},{"key":"e_1_2_9_41_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.4c13870"},{"key":"e_1_2_9_42_1","doi-asserted-by":"crossref","first-page":"124","DOI":"10.1021\/accountsmr.4c00236","article-title":"Symmetry Manipulation of Two\u2010Dimensional Semiconductors by Janus Structure","volume":"6","author":"Zheng X.","year":"2024","journal-title":"Accounts of Materials Research"},{"key":"e_1_2_9_43_1","doi-asserted-by":"crossref","DOI":"10.1002\/adma.202410469","article-title":"Low\u2010Symmetry Van Der Waals Dielectric GaInS3 Triggered 2D MoS2 Giant Anisotropy via Symmetry Engineering","volume":"36","author":"Sun Z.","year":"2024","journal-title":"Advanced Materials"},{"key":"e_1_2_9_44_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aaz9146"},{"key":"e_1_2_9_45_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemrev.2c00455"},{"key":"e_1_2_9_46_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202200082"},{"key":"e_1_2_9_47_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42254\u2010020\u201000276\u20100"},{"key":"e_1_2_9_48_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202508255"},{"key":"e_1_2_9_49_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202410163"},{"key":"e_1_2_9_50_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201055130\u2010z"},{"key":"e_1_2_9_51_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202409550"},{"key":"e_1_2_9_52_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202404309"},{"key":"e_1_2_9_53_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.47.558"},{"key":"e_1_2_9_54_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.77.3865"},{"key":"e_1_2_9_55_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.59.1758"},{"key":"e_1_2_9_56_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3382344"}],"container-title":["Advanced Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/adma.74908","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/adma.74908","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/adma.74908","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,5]],"date-time":"2026-09-05T17:17:41Z","timestamp":1788628661000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/adma.74908"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,5]]},"references-count":55,"alternative-id":["10.1002\/adma.74908"],"URL":"https:\/\/doi.org\/10.1002\/adma.74908","archive":["Portico"],"relation":{},"ISSN":["0935-9648","1521-4095"],"issn-type":[{"value":"0935-9648","type":"print"},{"value":"1521-4095","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,5]]},"assertion":[{"value":"2026-04-21","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-08-28","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-09-05","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e74908"}}