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Here, we demonstrate chemical vapor deposition (CVD)\u2010grown Cu\n                    <jats:sub>3<\/jats:sub>\n                    (C\n                    <jats:sub>6<\/jats:sub>\n                    O\n                    <jats:sub>6<\/jats:sub>\n                    )\n                    <jats:sub>2<\/jats:sub>\n                    thin films, a highly conductive two\u2010dimensional (2D) MOF, as gate electrodes, enabled by their suitable work function and stable electronic structure. A sequential APS\u2013Cr etching strategy enables high\u2010conformity patterning of MOF thin films fully compatible with standard photolithographic processes, while preserving the integrity of the underlying device layers. Field\u2010effect transistors were realized across three technologically relevant semiconductor platforms, including\n                    <jats:italic>n<\/jats:italic>\n                    \u2010type MoS\n                    <jats:sub>2<\/jats:sub>\n                    ,\n                    <jats:italic>p<\/jats:italic>\n                    \u2010type MoTe\n                    <jats:sub>2<\/jats:sub>\n                    , and indium gallium zinc oxide (IGZO), demonstrating the generality of Cu\n                    <jats:sub>3<\/jats:sub>\n                    (C\n                    <jats:sub>6<\/jats:sub>\n                    O\n                    <jats:sub>6<\/jats:sub>\n                    )\n                    <jats:sub>2<\/jats:sub>\n                    MOF as a gate electrode material. The resulting devices exhibit transfer characteristics and charge mobilities comparable to conventional metal gates in MoS\n                    <jats:sub>2<\/jats:sub>\n                    , while large\u2010area IGZO transistor arrays show uniform and highly reproducible electrical performance. These results establish conductive MOF thin films as viable gate materials and expand their potential toward source\u2013drain electrodes and even channel materials, in next\u2010generation semiconductor devices.\n                  <\/jats:p>","DOI":"10.1002\/adma.75003","type":"journal-article","created":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T10:18:23Z","timestamp":1789467503000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Lithography\u2010Compatible Conductive Metal\u2013Organic Frameworks for Scalable Electronics"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0003-6178-841X","authenticated-orcid":false,"given":"Hyeonwoo","family":"Lee","sequence":"first","affiliation":[{"name":"Department of Chemistry Pohang University of Science and Technology (POSTECH)  Pohang Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Han Joo","family":"Lee","sequence":"additional","affiliation":[{"name":"Van der Waals Materials Research Center Department of Physics Yonsei University  Seodaemun\u2010gu Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Myeonggeun","family":"Choe","sequence":"additional","affiliation":[{"name":"Department of Chemistry Pohang University of Science and Technology (POSTECH)  Pohang Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9392-7849","authenticated-orcid":false,"given":"Jeehong","family":"Park","sequence":"additional","affiliation":[{"name":"Van der Waals Materials Research Center Department of Physics Yonsei University  Seodaemun\u2010gu Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4944-8319","authenticated-orcid":false,"given":"Yeonjin","family":"Yi","sequence":"additional","affiliation":[{"name":"Van der Waals Materials Research Center Department of Physics Yonsei University  Seodaemun\u2010gu Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seongil","family":"Im","sequence":"additional","affiliation":[{"name":"Van der Waals Materials Research Center Department of Physics Yonsei University  Seodaemun\u2010gu Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Suk Hyun","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Smart Green Technology Engineering Pukyong National University  Busan Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1002-1262","authenticated-orcid":false,"given":"Hee Cheul","family":"Choi","sequence":"additional","affiliation":[{"name":"Department of Chemistry Pohang University of Science and Technology (POSTECH)  Pohang Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ji Hoon","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Smart Green Technology Engineering Pukyong National University  Busan Republic of Korea"},{"name":"Department of Metallurgical Engineering Pukyong National University  Busan Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8770-6094","authenticated-orcid":false,"given":"Sarah S.","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Chemistry Korea Advanced Institute of Science and Technology (KAIST)  Daejeon Republic of 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