{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T08:04:36Z","timestamp":1789977876261,"version":"4.0.1"},"reference-count":54,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T00:00:00Z","timestamp":1789948800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T00:00:00Z","timestamp":1789948800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Transition metal dichalcogenides (TMD) are attractive for adsorption\u2010driven reactions, yet their activity is strongly site\u2010dependent. Activity is concentrated at edge motifs, whereas most exposed area resides on inert basal planes. Dual\u2010site designs that enrich edges while activating basal planes with catalysts remain challenging to realize without coarsening and metal aggregation during thermal processing. Here, an intense pulsed light\u2010driven flash thermal synthesis route is demonstrated that directly converts ammonium tetrathiomolybdate ((NH\n                    <jats:sub>4<\/jats:sub>\n                    )\n                    <jats:sub>2<\/jats:sub>\n                    MoS\n                    <jats:sub>4<\/jats:sub>\n                    ) into few\u2010layer, edge\u2010rich MoS\n                    <jats:sub>2<\/jats:sub>\n                    nanoflakes (FTS\u2010MoS\n                    <jats:sub>2<\/jats:sub>\n                    ) within 10 ms pulse in ambient\u2010air. Ultrafast photothermal shock (1192\u20131811\u00b0C; \u223c10\n                    <jats:sup>5<\/jats:sup>\n                    \/10\n                    <jats:sup>4<\/jats:sup>\n                    \u00b0C s\n                    <jats:sup>\u2212<\/jats:sup>\n                    <jats:sup>1<\/jats:sup>\n                    heating\/cooling rates) suppresses in\u2010plane coarsening and out\u2010of\u2010plane stacking, while Pt, Ir, or Au single atoms are uniformly anchored on MoS\n                    <jats:sub>2<\/jats:sub>\n                    via rapid metal\u2010sulfur coordination without aggregation. As a proof\u2010of\u2010concept, FTS\u2010MoS\n                    <jats:sub>2<\/jats:sub>\n                    exhibits a 23.6\u2010fold higher NO\n                    <jats:sub>2<\/jats:sub>\n                    response at 5 ppm than solvothermally synthesized MoS\n                    <jats:sub>2<\/jats:sub>\n                    . Pt single atom functionalization (FTS\u2010Pt\n                    <jats:sub>SA<\/jats:sub>\n                    \u2010MoS\n                    <jats:sub>2<\/jats:sub>\n                    , 1.2 wt%) further boosts the response by 22.8\u2010fold versus pristine FTS\u2010MoS\n                    <jats:sub>2<\/jats:sub>\n                    and achieves 100.8% response toward 400 ppb NO\n                    <jats:sub>2<\/jats:sub>\n                    at room temperature. Density functional theory supports enhanced NO\n                    <jats:sub>2<\/jats:sub>\n                    adsorption and charge transfer on FTS\u2010Pt\n                    <jats:sub>SA<\/jats:sub>\n                    \u2010MoS\n                    <jats:sub>2<\/jats:sub>\n                    . With a low electrical energy input (8.6 kJ g\n                    <jats:sup>\u22121<\/jats:sup>\n                    ) and scalable irradiation, ultrafast FTS enables industrially relevant active\u2010site and single\u2010atom engineering in TMDs for high\u2010performance gas sensors.\n                  <\/jats:p>","DOI":"10.1002\/adma.75106","type":"journal-article","created":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T07:23:18Z","timestamp":1789975398000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["In Situ Single\u2010Atom Decoration of Transition Metal Dichalcogenides by Millisecond Flash Thermal Synthesis Toward High Performance Room Temperature Chemiresistors"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0000-9033-1548","authenticated-orcid":false,"given":"Euichul","family":"Shin","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2558-7472","authenticated-orcid":false,"given":"Jacob","family":"Choe","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wonjun","family":"Choi","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-8149-6058","authenticated-orcid":false,"given":"Sanghyeon","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chungseong","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jong Won","family":"Baek","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sungyoon","family":"Woo","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0007-8785-5202","authenticated-orcid":false,"given":"Mingyu","family":"Sagong","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Minsu","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chan\u2010Woo","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Energy and Materials Engineering Dongguk University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7841-8058","authenticated-orcid":false,"given":"Ju","family":"Li","sequence":"additional","affiliation":[{"name":"Department of Nuclear Science and Engineering Massachusetts Institute of Technology  Cambridge Massachusetts USA"},{"name":"Department of Materials Science and Engineering Massachusetts Institute of Technology  Cambridge Massachusetts USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4677-7363","authenticated-orcid":false,"given":"Jong Min","family":"Yuk","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0960-7146","authenticated-orcid":false,"given":"Sung\u2010Yool","family":"Choi","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-8739-671X","authenticated-orcid":false,"given":"Dong\u2010Ha","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science &amp; Chemical Engineering Hanyang University\u2010ERICA  Ansan Gyeonggi\u2010do Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9970-2218","authenticated-orcid":false,"given":"Il\u2010Doo","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology  Daejeon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,9,21]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"crossref","DOI":"10.1038\/natrevmats.2017.33","article-title":"2D transition Metal Dichalcogenides","volume":"2","author":"Manzeli S.","year":"2017","journal-title":"Nature Reviews Materials"},{"key":"e_1_2_9_3_1","doi-asserted-by":"crossref","DOI":"10.1063\/1.4963290","article-title":"Air Sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2","volume":"120","author":"Mirabelli G.","year":"2016","journal-title":"Journal of Applied Physics"},{"key":"e_1_2_9_4_1","doi-asserted-by":"crossref","first-page":"8052","DOI":"10.1038\/srep08052","article-title":"Charge\u2010transfer\u2010based Gas Sensing Using Atomic\u2010layer MoS2","volume":"5","author":"Cho B.","year":"2015","journal-title":"Scientific 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