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Ternary logic offers inherent advantages in data density, interconnection complexity, and computational throughput, but existing implementations are overly complex and rely on multiple binary transistors combined with additional components to achieve ternary states. This paper presents a ternary field\u2010effect transistor using antiferroelectric gating, which provides distinct ternary conduction states at the single\u2010transistor level that are robust and dynamically reconfigurable. A simple inverter based on a single ternary transistor is also demonstrated, which reduces transition time by 82% compared with a much more complex complementary metal\u2010oxide\u2010semiconductor device. Antiferroelectric field\u2010effect ternary transistors may pave the way for broad adoption of ternary logic systems.<\/jats:p>","DOI":"10.1002\/adma.75141","type":"journal-article","created":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T06:56:32Z","timestamp":1790232992000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Ternary Field\u2010Effect Transistor by Antiferroelectric Gating"],"prefix":"10.1002","author":[{"given":"Chuanlai","family":"Ren","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering Southern University of Science and Technology  Shenzhen Guangdong China"},{"name":"Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology  Shenzhen Guangdong 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Science and Technology  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shuhua","family":"Ma","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Southern University of Science and Technology  Shenzhen Guangdong China"},{"name":"Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology  Shenzhen Guangdong China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4543-1886","authenticated-orcid":false,"given":"Boyuan","family":"Huang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Southern University of Science and Technology  Shenzhen Guangdong China"},{"name":"Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology  Shenzhen Guangdong 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