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Here, we report on the direct observation of nonuniform and nearly discrete vertical arrangements of dipoles in  thin films consisting of closely spaced head\u2010to\u2010head (HH) and tail\u2010to\u2010tail (TT) charged 180 walls, each exhibiting a distinct bulk\u2010like structure. These charged domain walls (CDWs) further compress the irreducibly narrow, laterally stacked domains vertically to a thickness of 1\u20132.75 nm, yielding in\u2010plane domains with sub\u2010 footprints\u2014among the smallest ever reported for any ferroelectric material. The HH and TT walls form due to their flat longitudinal optical (LO) polar bands, and the former are electrostatically stabilized by bound\u2010charge compensation via interstitial oxygen atoms, which act as natural structural defects at the HH walls. Moreover, these walls are predicted to be conducting and to exhibit ultralow propagation barriers, with HH walls (1.6 meV) being far more mobile than TT walls (22.3 meV), indicating strong potential for low\u2010voltage, domain\u2010wall\u2010based\u00a0nanoelectronics.<\/jats:p>","DOI":"10.1002\/adma.75144","type":"journal-article","created":{"date-parts":[[2026,10,22]],"date-time":"2026-10-22T06:11:53Z","timestamp":1792649513000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Sub\u2010nm\n                    <sup>2<\/sup>\n                    Ferroelectric Domains via Charged 180\u00b0 Walls in ZrO\n                    <sub>2<\/sub>"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-7048-413X","authenticated-orcid":false,"given":"Nashrah","family":"Afroze","sequence":"first","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta Georgia 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