{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,8]],"date-time":"2026-10-08T07:49:13Z","timestamp":1791445753279,"version":"4.3.3"},"reference-count":57,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T00:00:00Z","timestamp":1791331200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T00:00:00Z","timestamp":1791331200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["DMR\u20101828731"],"award-info":[{"award-number":["DMR\u20101828731"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000104","name":"National Aeronautics and Space Administration","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000104","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000181","name":"Air Force Office of Scientific Research","doi-asserted-by":"publisher","award":["FA9550-25-1-0037"],"award-info":[{"award-number":["FA9550-25-1-0037"]}],"id":[{"id":"10.13039\/100000181","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>Accessing surface quantum transport in topological insulators is hampered by residual bulk conduction arising from lattice defects. Here, we demonstrate a novel synthesis pathway for realizing high\u2010mobility \u2010 thin films in which surface transport is dominant. An in situ room\u2010temperature Te treatment modifies the film stoichiometry, enabling continuous tuning of the sheet carrier density over more than an order of magnitude through the charge\u2010neutrality point without an external gate electrode. In the lower\u2010carrier\u2010density films, a fully developed  quantum Hall state is observed, and Landau\u2010level energies extracted across samples collapse onto the  relation, providing evidence for the massless Dirac dispersion of the top and bottom surface states. These results establish stoichiometry engineering as a lithography\u2010 and gate\u2010free approach to accessing quantum Hall transport in epitaxial topological\u2010insulator thin\u00a0films.<\/jats:p>","DOI":"10.1002\/adma.75162","type":"journal-article","created":{"date-parts":[[2026,10,8]],"date-time":"2026-10-08T06:49:17Z","timestamp":1791442157000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Quantum Hall Effect in Stoichiometry\u2010Engineered \u03b2\u2010Ag2Te"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8460-5060","authenticated-orcid":false,"given":"Mizuki","family":"Ohno","sequence":"first","affiliation":[{"name":"Department of Applied Physics and Materials Science California Institute of Technology Pasadena California USA"},{"name":"Institute for Quantum Information and Matter California Institute of Technology Pasadena California USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Veronica","family":"Show","sequence":"additional","affiliation":[{"name":"Department of Applied Physics and Materials Science California Institute of Technology Pasadena California USA"},{"name":"Institute for Quantum Information and Matter California Institute of Technology Pasadena California USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-9599-6127","authenticated-orcid":false,"given":"Reiley","family":"Dorrian","sequence":"additional","affiliation":[{"name":"Department of Applied Physics and Materials Science California Institute of Technology Pasadena California USA"},{"name":"Institute for Quantum Information and Matter California Institute of Technology Pasadena California USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-6569-9358","authenticated-orcid":false,"given":"Darryl","family":"Shima","sequence":"additional","affiliation":[{"name":"Center for High Technology Materials University of New Mexico Albuquerque New Mexico USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ganesh","family":"Balakrishnan","sequence":"additional","affiliation":[{"name":"Center for High Technology Materials University of New Mexico Albuquerque New Mexico USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3183-9864","authenticated-orcid":false,"given":"Joseph","family":"Falson","sequence":"additional","affiliation":[{"name":"Department of Applied Physics and Materials Science California Institute of Technology Pasadena California USA"},{"name":"Institute for Quantum Information and Matter California Institute of Technology Pasadena California USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,10,7]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.82.3045"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.83.1057"},{"issue":"2","key":"e_1_2_9_4_1","doi-asserted-by":"crossref","DOI":"10.1103\/RevModPhys.88.021004","article-title":"Colloquium: Topological Band Theory","volume":"88","author":"Bansil A.","year":"2016","journal-title":"Reviews of Modern Physics"},{"issue":"12","key":"e_1_2_9_5_1","doi-asserted-by":"crossref","first-page":"956","DOI":"10.1038\/nphys3140","article-title":"Observation of Topological Surface State Quantum Hall Effect in an Intrinsic Three\u2010Dimensional Topological Insulator","volume":"10","author":"Xu Y.","year":"2014","journal-title":"Nature Physics"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms7627"},{"issue":"12","key":"e_1_2_9_7_1","doi-asserted-by":"crossref","first-page":"8245","DOI":"10.1021\/acs.nanolett.5b03770","article-title":"Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering","volume":"15","author":"Koirala N.","year":"2015","journal-title":"Nano Letter"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.7b04033"},{"issue":"36","key":"e_1_2_9_9_1","doi-asserted-by":"crossref","DOI":"10.1002\/adma.201901091","article-title":"Quantum\u2010Hall to Insulator Transition in Ultra\u2010Low\u2010Carrier\u2010Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level","volume":"31","author":"Salehi M.","year":"2019","journal-title":"Advances in Materials"},{"issue":"17","key":"e_1_2_9_10_1","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevLett.134.176602","article-title":"Emergence of Ferroelectric Topological Insulator as Verified by Quantum Hall Effect of Surface States in (Sn,Pb,In)Te Films","volume":"134","author":"Yoshimi R.","year":"2025","journal-title":"Physical Review Letters"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.79.195208"},{"issue":"12","key":"e_1_2_9_12_1","doi-asserted-by":"crossref","first-page":"960","DOI":"10.1038\/nphys1861","article-title":"Two\u2010Dimensional Surface State in the Quantum Limit of a Topological Insulator","volume":"6","author":"Analytis J. G.","year":"2010","journal-title":"Nature Physics"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.84.165311"},{"issue":"6129","key":"e_1_2_9_14_1","doi-asserted-by":"crossref","first-page":"167","DOI":"10.1126\/science.1234414","article-title":"Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator","volume":"340","author":"Chang C.\u2010Z.","year":"2013","journal-title":"Science"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.82.241306"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms1588"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms11456"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1189792"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl200017f"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2011.19"},{"issue":"6","key":"e_1_2_9_21_1","doi-asserted-by":"crossref","first-page":"1272","DOI":"10.1107\/S0021889811038970","article-title":"VESTA 3 for Three\u2010Dimensional Visualization of Crystal, Volumetric and Morphology Data","volume":"44","author":"Momma K.","year":"2011","journal-title":"Journal of Applied Crystallography"},{"issue":"6655","key":"e_1_2_9_22_1","doi-asserted-by":"crossref","first-page":"57","DOI":"10.1038\/36306","article-title":"Large Magnetoresistance in Non\u2010Magnetic Silver Chalcogenides","volume":"390","author":"Xu R.","year":"1997","journal-title":"Nature"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.126144"},{"issue":"6","key":"e_1_2_9_24_1","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevLett.88.066602","article-title":"Band\u2010Gap Tuning and Linear Magnetoresistance in the Silver Chalcogenides","volume":"88","author":"Lee M.","year":"2002","journal-title":"Physical Review Letters"},{"issue":"18","key":"e_1_2_9_25_1","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevLett.95.186603","article-title":"Current Jets, Disorder, and Linear Magnetoresistance in the Silver Chalcogenides","volume":"95","author":"Hu J.","year":"2005","journal-title":"Physical Review Letters"},{"issue":"15","key":"e_1_2_9_26_1","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevLett.106.156808","article-title":"Topological Aspect and Quantum Magnetoresistance of \u03b2$\\beta$\u2010Ag2Te${\\rm Ag}_2{\\rm Te}$","volume":"106","author":"Zhang W.","year":"2011","journal-title":"Physical Review Letters"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl301763r"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4795735"},{"issue":"1","key":"e_1_2_9_29_1","doi-asserted-by":"crossref","first-page":"8062","DOI":"10.1038\/srep08062","article-title":"Gate\u2010Tuned Quantum Oscillations of Topological Surface States in \u03b2$\\beta$\u2010Ag2Te${\\rm Ag}_2{\\rm Te}$","volume":"5","author":"Sulaev A.","year":"2015","journal-title":"Scientific Reports"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.0c01676"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.143.666"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0167\u2010577X(99)00143\u20103"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.3c02703"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201045643\u2010y"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1016\/0022\u20103697(60)90116\u20105"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1735921"},{"key":"e_1_2_9_37_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.143.666"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1558896"},{"issue":"7","key":"e_1_2_9_39_1","doi-asserted-by":"crossref","first-page":"1325","DOI":"10.1134\/S1063783415070033","article-title":"Dependence of the Spectra of Charge Carriers on the Concentration of Defects in Silver Telluride","volume":"57","author":"Aliev F. F.","year":"2015","journal-title":"Physics of the Solid State"},{"key":"e_1_2_9_40_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0131326"},{"key":"e_1_2_9_41_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtphys.2023.101129"},{"key":"e_1_2_9_42_1","doi-asserted-by":"publisher","DOI":"10.1093\/nsr\/nwag229"},{"key":"e_1_2_9_43_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1708799"},{"key":"e_1_2_9_44_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.332753"},{"key":"e_1_2_9_45_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.121309"},{"key":"e_1_2_9_46_1","doi-asserted-by":"publisher","DOI":"10.1007\/s42452\u2010020\u201003406\u20106"},{"key":"e_1_2_9_47_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0310066"},{"issue":"18","key":"e_1_2_9_48_1","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevLett.98.186806","article-title":"Carrier Transport in Two\u2010Dimensional Graphene Layers","volume":"98","author":"Hwang E. H.","year":"2007","journal-title":"Physical Review Letters"},{"key":"e_1_2_9_49_1","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.83.407"},{"key":"e_1_2_9_50_1","doi-asserted-by":"publisher","DOI":"10.1038\/nphys2108"},{"key":"e_1_2_9_51_1","doi-asserted-by":"crossref","unstructured":"B.Skinner T.Chen andB. I.Shklovskii \u201cWhy Is the Bulk Resistivity of Topological Insulators So Small? \u201dPhysical Review Letters109(Oct 2012):176801 https:\/\/doi.org\/10.1103\/PhysRevLett.109.176801.","DOI":"10.1103\/PhysRevLett.109.176801"},{"key":"e_1_2_9_52_1","doi-asserted-by":"publisher","DOI":"10.1134\/1.1500462"},{"key":"e_1_2_9_53_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0131326"},{"issue":"1","key":"e_1_2_9_54_1","doi-asserted-by":"crossref","first-page":"72","DOI":"10.1016\/0040-6090(92)90872-9","article-title":"Van Der Waals Epitaxy\u2013A New Epitaxial Growth Method for a Highly Lattice\u2010Mismatched System","volume":"216","author":"Koma A.","year":"1992","journal-title":"Thin Solid Films"},{"key":"e_1_2_9_55_1","doi-asserted-by":"crossref","first-page":"236","DOI":"10.1016\/S0022-0248(98)01329-3","article-title":"Van Der Waals Epitaxy for Highly Lattice\u2010Mismatched Systems","volume":"201","author":"Koma A.","year":"1999","journal-title":"Journal of Crystal Growth"},{"key":"e_1_2_9_56_1","doi-asserted-by":"publisher","DOI":"10.1021\/cg5015471z"},{"key":"e_1_2_9_57_1","doi-asserted-by":"publisher","DOI":"10.1116\/1.588778"},{"key":"e_1_2_9_58_1","doi-asserted-by":"publisher","DOI":"10.1524\/zkri.1993.203.Part\u20101.1"}],"container-title":["Advanced Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/adma.75162","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/adma.75162","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/adma.75162","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,8]],"date-time":"2026-10-08T06:49:21Z","timestamp":1791442161000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/adma.75162"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,7]]},"references-count":57,"alternative-id":["10.1002\/adma.75162"],"URL":"https:\/\/doi.org\/10.1002\/adma.75162","archive":["Portico"],"relation":{},"ISSN":["0935-9648","1521-4095"],"issn-type":[{"value":"0935-9648","type":"print"},{"value":"1521-4095","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,7]]},"assertion":[{"value":"2026-06-10","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-09-21","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-10-07","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e75162"}}