{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T06:50:04Z","timestamp":1792047004675,"version":"4.4.0"},"reference-count":68,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T00:00:00Z","timestamp":1791936000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T00:00:00Z","timestamp":1791936000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Area\u2010type memristors are attractive for analog in\u2010memory computing, but their use is often limited by parasitic charge storage, causing readout drift, non\u2010pinched hysteresis, and degraded readout fidelity. We show that near\u2010ideal area\u2010type switching emerges within a tunneling\u2010governed transport regime in ultrathin layers that suppresses charging\u2010related readout artifacts. By varying the thickness in TiN\/Ta\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>5<\/jats:sub>\n                    \/Pt in a range of 3\u201310\u00a0nm, we reveal the transition from filamentary switching to near\u2010short\u2010circuit transport with two gradual\u2010switching modes with different readout stability. The 5\u20136\u00a0nm thickness window suppresses non\u2010pinched hysteresis and short\u2010time drift while preserving analog switching, yielding nearly polarity\u2010symmetric hysteresis and readout, clear area scaling, and continuous near\u2010linear conductance modulation. Our analysis indicates that trap\u2010assisted tunneling dominates the stabilized\u2010state response, whereas ionic redistribution governs pristine\u2010state reconstruction and the stability boundaries. A compact model is derived for the 5\u00a0nm device which reproduces the quasi\u2010static I\u2013V behavior and the dynamic resistance evolution based on pulse\u2010width\u2010dependent characteristics. The verified model is provided as Verilog\u2010A code enabling simulation in circuit design tools. Our results demonstrate that ultrathin scaling is a regime\u2010defining design rule for near\u2010ideal area\u2010type operation in oxide memristors, implying a fundamental approach to fabricating robust multi\u2010state memristors for in\u2010memory computing applications.\n                  <\/jats:p>","DOI":"10.1002\/adma.75393","type":"journal-article","created":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T06:40:06Z","timestamp":1792046406000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Thickness\u2010Defined Transport Regime Toward Near\u2010Ideal Area\u2010Type Switching"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-9005-5175","authenticated-orcid":false,"given":"Cuo","family":"Wu","sequence":"first","affiliation":[{"name":"Chair of Nanoelectronics Technische Universit\u00e4t Dresden  Dresden 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S.Demirkol andA.Ascoli \u201cSPICE Compact Model for an Analog Switching Niobium Oxide Memristor \u201d in2022 11thInternational Conference on Modern Circuits and Systems Technologies (MOCAST) Bremen Germany (IEEE 2022) 1\u20134 https:\/\/doi.org\/10.1109\/mocast54814.2022.9837726.","DOI":"10.1109\/MOCAST54814.2022.9837726"},{"key":"e_1_2_11_68_1","volume-title":"Electronic Processes in Ionic Crystals","author":"Mott N. 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