{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,11,2]],"date-time":"2026-11-02T22:41:30Z","timestamp":1793659290293,"version":"4.5.1"},"reference-count":73,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2022,1,14]],"date-time":"2022-01-14T00:00:00Z","timestamp":1642118400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62174060"],"award-info":[{"award-number":["62174060"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61774123"],"award-info":[{"award-number":["61774123"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012664","name":"International Joint Laboratory for MicroNano Manufacturing and Measurement Technologies","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100012664","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"published-print":{"date-parts":[[2022,3]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Phase\u2010change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design\/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase\u2010change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming\/breaking \u201cnano\u2010bridges\u201d that link up the crystalline domains into a conductive path. This conductive\u2010bridge switching mechanism thus only involves nanometer\u2010scale volume in programming, despite of the large areas in contact with the electrodes. The pore\u2010like devices based on spontaneously phase\u2010separated Ge<jats:sub>13<\/jats:sub>Sb<jats:sub>71<\/jats:sub>O<jats:sub>16<\/jats:sub> alloy enable a record\u2010low programming energy, down to a few tens of femtojoule. The new PCM\/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing.<\/jats:p>","DOI":"10.1002\/advs.202103478","type":"journal-article","created":{"date-parts":[[2022,1,15]],"date-time":"2022-01-15T01:30:01Z","timestamp":1642210201000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":61,"title":["Designing Conductive\u2010Bridge Phase\u2010Change Memory to Enable Ultralow Programming Power"],"prefix":"10.1002","volume":"9","author":[{"given":"Zhe","family":"Yang","sequence":"first","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology  Wuhan 430074 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bowen","family":"Li","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology  Wuhan 430074 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiang\u2010Jing","family":"Wang","sequence":"additional","affiliation":[{"name":"Center for Alloy Innovation and Design (CAID) State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University  Xi'an 710049 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xu\u2010Dong","family":"Wang","sequence":"additional","affiliation":[{"name":"Center for Alloy Innovation and Design (CAID) State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University  Xi'an 710049 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Meng","family":"Xu","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology  Wuhan 430074 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hao","family":"Tong","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology  Wuhan 430074 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaomin","family":"Cheng","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology  Wuhan 430074 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lu","family":"Lu","sequence":"additional","affiliation":[{"name":"The School of Microelectronics State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University  Xi'an 710049 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chunlin","family":"Jia","sequence":"additional","affiliation":[{"name":"The School of Microelectronics State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University  Xi'an 710049 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ming","family":"Xu","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology  Wuhan 430074 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiangshui","family":"Miao","sequence":"additional","affiliation":[{"name":"Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology  Wuhan 430074 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0720-4781","authenticated-orcid":false,"given":"Wei","family":"Zhang","sequence":"additional","affiliation":[{"name":"Center for Alloy Innovation and Design (CAID) State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University  Xi'an 710049 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"En","family":"Ma","sequence":"additional","affiliation":[{"name":"Center for Alloy Innovation and Design (CAID) State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University  Xi'an 710049 China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2022,1,14]]},"reference":[{"key":"e_1_2_8_1_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2009"},{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41578-018-0076-x"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41578-019-0159-3"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-020-0655-z"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0092-2"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201705587"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201900784"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202006221"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-019-12196-4"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-03070-1"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201908302"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aao3212"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aaq0476"},{"key":"e_1_2_8_14_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aaz1129"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aay0291"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.1038\/natrevmats.2018.9"},{"key":"e_1_2_8_17_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.6b08700"},{"key":"e_1_2_8_18_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5004495"},{"key":"e_1_2_8_19_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.0c03027"},{"key":"e_1_2_8_20_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.scib.2021.07.018"},{"key":"e_1_2_8_21_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms5086"},{"key":"e_1_2_8_22_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5b02661"},{"key":"e_1_2_8_23_1","doi-asserted-by":"crossref","first-page":"21.1.1","DOI":"10.1109\/IEDM.2016.7838463","volume-title":"2016 IEEE Int. Electron Devices Meeting (IEDM)","author":"Chien W. C.","year":"2016"},{"key":"e_1_2_8_24_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn4000176"},{"key":"e_1_2_8_25_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2746342"},{"key":"e_1_2_8_26_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1220119"},{"key":"e_1_2_8_27_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms10482"},{"key":"e_1_2_8_28_1","doi-asserted-by":"crossref","unstructured":"T.Morikawa K.Akita T.Ohyanagi M.Kitamura M.Kinoshita M.Tai N.Takaura 2012 IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway2012 p.31.4.1.","DOI":"10.1109\/IEDM.2012.6479144"},{"key":"e_1_2_8_29_1","doi-asserted-by":"crossref","unstructured":"H. L.Lung Y. H.HO Y.Zhu W. C.Chien S.Kim W.Kim H. Y.Cheng A.Ray M.Brightsky R.Bruce C. W.Yeh C.Lam VLSI Tech. IEEE 2016 pp.\u00a01.","DOI":"10.1109\/VLSIT.2016.7573405"},{"key":"e_1_2_8_30_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2011.96"},{"key":"e_1_2_8_31_1","doi-asserted-by":"crossref","unstructured":"N.Takaura T.Ohyanagi M.Tai M.Kinoshita K.Akita T.Morikawa H.Shirakawa M.Araidai K.Shiraishi Y.Saito J.Tominaga 2014 IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway2014 pp.29.2.1.","DOI":"10.1109\/IEDM.2014.7047132"},{"key":"e_1_2_8_32_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2017.12.146"},{"key":"e_1_2_8_33_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201800634"},{"key":"e_1_2_8_34_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1201938"},{"key":"e_1_2_8_35_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl3038097"},{"key":"e_1_2_8_36_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1204093"},{"key":"e_1_2_8_37_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1177483"},{"key":"e_1_2_8_38_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2931"},{"key":"e_1_2_8_39_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aaw1773"},{"key":"e_1_2_8_40_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aax6333"},{"key":"e_1_2_8_41_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.96.184102"},{"key":"e_1_2_8_42_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-018-0110-9"},{"key":"e_1_2_8_43_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.abd7097"},{"key":"e_1_2_8_44_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3380667"},{"key":"e_1_2_8_45_1","doi-asserted-by":"publisher","DOI":"10.1021\/cg500347g"},{"key":"e_1_2_8_46_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.pmatsci.2017.11.001"},{"key":"e_1_2_8_47_1","doi-asserted-by":"publisher","DOI":"10.1021\/j100135a014"},{"key":"e_1_2_8_48_1","doi-asserted-by":"publisher","DOI":"10.3390\/cryst10060522"},{"key":"e_1_2_8_49_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms8467"},{"key":"e_1_2_8_50_1","unstructured":"N.Matsuzaki K.Kurotsuchi Y.Matsui O.Tonomura N.Yamamoto Y.Fujisaki N.Kitai R.Takemura K.Osada S.Hanzawa H.Moriya T.Iwasaki T.Kawahara N.Takaura M.Terao M.Matsuoka M.Moniwa 2005 IEEE Int. Electron Devices Meeting IEEE Piscataway2005 p.738."},{"key":"e_1_2_8_51_1","doi-asserted-by":"publisher","DOI":"10.1038\/srep11150"},{"key":"e_1_2_8_52_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2016.11.244"},{"key":"e_1_2_8_53_1","doi-asserted-by":"publisher","DOI":"10.1039\/C7TC00127D"},{"key":"e_1_2_8_54_1","doi-asserted-by":"publisher","DOI":"10.1080\/01418619708207202"},{"key":"e_1_2_8_55_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.368855"},{"key":"e_1_2_8_56_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201803777"},{"key":"e_1_2_8_57_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201806280"},{"key":"e_1_2_8_58_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202102356"},{"key":"e_1_2_8_59_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2226"},{"key":"e_1_2_8_60_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201706735"},{"key":"e_1_2_8_61_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201904316"},{"key":"e_1_2_8_62_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202000482"},{"key":"e_1_2_8_63_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2058771"},{"key":"e_1_2_8_64_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2935890"},{"key":"e_1_2_8_65_1","unstructured":"Y. C.Chen C. T.Rettner S.Raoux G. W.Burr S. H.Chen R. M.Shelby M.Salinga W. P.Risk T. D.Happ G. M.McClelland M.Breitwisch A.Schrott J. B.Philipp M. H.Lee R.Cheek T.Nirschl M.Lamorey C. F.Chen E.Joseph S.Zaidi B.Yee H. L.Lung R.Bergmann C.Lam 2006 Int. Electron Devices Meeting IEEE Piscataway2006."},{"key":"e_1_2_8_66_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2016.70"},{"key":"e_1_2_8_67_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202003419"},{"key":"e_1_2_8_68_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.47.558"},{"key":"e_1_2_8_69_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.77.3865"},{"key":"e_1_2_8_70_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.59.1758"},{"key":"e_1_2_8_71_1","doi-asserted-by":"publisher","DOI":"10.1002\/jcc.26353"},{"key":"e_1_2_8_72_1","doi-asserted-by":"publisher","DOI":"10.1002\/wcms.1159"},{"key":"e_1_2_8_73_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.54.1703"}],"container-title":["Advanced Science"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/advs.202103478","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/advs.202103478","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/advs.202103478","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,6]],"date-time":"2025-10-06T11:20:24Z","timestamp":1759749624000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/advs.202103478"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,1,14]]},"references-count":73,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2022,3]]}},"alternative-id":["10.1002\/advs.202103478"],"URL":"https:\/\/doi.org\/10.1002\/advs.202103478","archive":["Portico"],"relation":{},"ISSN":["2198-3844","2198-3844"],"issn-type":[{"value":"2198-3844","type":"print"},{"value":"2198-3844","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,1,14]]},"assertion":[{"value":"2021-08-09","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2022-01-14","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2103478"}}