{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T18:00:05Z","timestamp":1787162405092,"version":"build-2736575974"},"reference-count":27,"publisher":"Wiley","issue":"24","license":[{"start":{"date-parts":[[2023,6,17]],"date-time":"2023-06-17T00:00:00Z","timestamp":1686960000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12204036"],"award-info":[{"award-number":["12204036"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"published-print":{"date-parts":[[2023,8]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>To achieve a desirable magnitude of spin\u2013orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin\u2013orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current\u2010induced effective magnetic field in a single layer of a ferromagnet with strong spin\u2013orbit interactions, the so\u2010called spin\u2013orbit ferromagnet, can be utilized to induce SOT. In spin\u2013orbit ferromagnet systems, electric field application has the potential for manipulating the spin\u2013orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate\u2010controlled SOT devices.<\/jats:p>","DOI":"10.1002\/advs.202301540","type":"journal-article","created":{"date-parts":[[2023,6,17]],"date-time":"2023-06-17T08:58:21Z","timestamp":1686992301000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["Electric Field Control of Spin\u2013Orbit Torque Magnetization Switching in a Spin\u2013Orbit Ferromagnet Single Layer"],"prefix":"10.1002","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7963-6022","authenticated-orcid":false,"given":"Miao","family":"Jiang","sequence":"first","affiliation":[{"name":"School of Materials Science and Engineering Beijing Institute of Technology Zhongguancun South Street No.5, Haidian Beijing 100081 China"},{"name":"Department of Electrical Engineering and Information Systems The University of Tokyo 7\u20103\u20101 Hongo, Bunkyo\u2010ku Tokyo 113\u20108656 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hirokatsu","family":"Asahara","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Systems The University of Tokyo 7\u20103\u20101 Hongo, Bunkyo\u2010ku Tokyo 113\u20108656 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shinobu","family":"Ohya","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Systems The University of Tokyo 7\u20103\u20101 Hongo, Bunkyo\u2010ku Tokyo 113\u20108656 Japan"},{"name":"Center for Spintronics Research Network (CSRN) Graduate School of Engineering The University of Tokyo 7\u20103\u20101 Hongo, Bunkyo\u2010ku Tokyo 113\u20108656 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Masaaki","family":"Tanaka","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Systems The University of Tokyo 7\u20103\u20101 Hongo, Bunkyo\u2010ku Tokyo 113\u20108656 Japan"},{"name":"Center for Spintronics Research Network (CSRN) Graduate School of Engineering The University of Tokyo 7\u20103\u20101 Hongo, Bunkyo\u2010ku Tokyo 113\u20108656 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2023,6,17]]},"reference":[{"key":"e_1_2_10_1_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3973"},{"key":"e_1_2_10_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-018-0137-y"},{"key":"e_1_2_10_3_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.119.137204"},{"key":"e_1_2_10_4_1","doi-asserted-by":"publisher","DOI":"10.1088\/1674-1056\/ab9439"},{"key":"e_1_2_10_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-018-0136-z"},{"key":"e_1_2_10_6_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4903041"},{"key":"e_1_2_10_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-018-08274-8"},{"key":"e_1_2_10_8_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.89.220409"},{"key":"e_1_2_10_9_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201600219"},{"key":"e_1_2_10_10_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0085-1"},{"key":"e_1_2_10_11_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.7b16919"},{"key":"e_1_2_10_12_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3520514"},{"key":"e_1_2_10_13_1","volume":"10","author":"Jiang M.","year":"2019","journal-title":"Nat. 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