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The 2H\u2010VX<jats:sub>2<\/jats:sub> (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin\u2010polarization. These corner states only accommodate the quantized fractional charge (e\/3). And the charge is bound at the corners of the nanodisk geometry 2H\u2010VX<jats:sub>2<\/jats:sub> (X = S, Se, Te) in real space. The corner states are robust against symmetry\u2010breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H\u2010VX<jats:sub>2<\/jats:sub> (X = S, Se, Te) materials can be maintained in the presence of spin\u2010orbit coupling and are stable against magnetization. Overall, the results reveal 2H\u2010VX<jats:sub>2<\/jats:sub> (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection.<\/jats:p>","DOI":"10.1002\/advs.202301952","type":"journal-article","created":{"date-parts":[[2023,7,30]],"date-time":"2023-07-30T22:26:41Z","timestamp":1690756001000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":39,"title":["Magnetic Second\u2010Order Topological Insulators in 2H\u2010Transition Metal Dichalcogenides"],"prefix":"10.1002","volume":"10","author":[{"given":"Guodong","family":"Liu","sequence":"first","affiliation":[{"name":"State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology  Tianjin 300130 China"},{"name":"School of Materials Science and Engineering Hebei University of\u2009 Technology  Tianjin 300130 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