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One of the key components is vdW topological insulators (TIs), which can produce a strong spin\u2010orbit\u2010torque (SOT) through the spin\u2010momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge\u2010to\u2010spin conversion efficiency (\n                    <jats:italic>q<\/jats:italic>\n                    <jats:sub>ICS<\/jats:sub>\n                    ). Here, a vdW heterostructure is used consisting of atomically\u2010thin layers of a bulk\u2010insulating TI Sn\u2010doped Bi\n                    <jats:sub>1.1<\/jats:sub>\n                    Sb\n                    <jats:sub>0.9<\/jats:sub>\n                    Te\n                    <jats:sub>2<\/jats:sub>\n                    S\n                    <jats:sub>1<\/jats:sub>\n                    and a room\u2010temperature ferromagnet Fe\n                    <jats:sub>3<\/jats:sub>\n                    GaTe\n                    <jats:sub>2,<\/jats:sub>\n                    to enhance the relative current ratio on the TSS up to \u224820%. The resulting\n                    <jats:italic>q<\/jats:italic>\n                    <jats:sub>ICS<\/jats:sub>\n                    reaches \u22481.65 nm\n                    <jats:sup>\u22121<\/jats:sup>\n                    and the critical current density\n                    <jats:italic>J<\/jats:italic>\n                    <jats:sub>c<\/jats:sub>\n                    \u22480.9\u00a0\u00d7\u00a010\n                    <jats:sup>6<\/jats:sup>\n                    \u00a0Acm\n                    <jats:sup>\u22122<\/jats:sup>\n                    at 300 K, surpassing the performance of TI\u2010based and heavy\u2010metal\u2010based SOT devices. These findings demonstrate that an all\u2010vdW heterostructure with thickness optimization offers a promising platform for efficient current\u2010controlled magnetization switching at room temperature.\n                  <\/jats:p>","DOI":"10.1002\/advs.202400893","type":"journal-article","created":{"date-parts":[[2024,3,23]],"date-time":"2024-03-23T02:13:12Z","timestamp":1711159992000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":32,"title":["Highly Efficient Room\u2010Temperature Spin\u2010Orbit\u2010Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet"],"prefix":"10.1002","volume":"11","author":[{"given":"Gyu Seung","family":"Choi","sequence":"first","affiliation":[{"name":"Department of Physics Pohang University of Science and Technology  Pohang 37673 Republic of Korea"},{"name":"Center for Artificial Low Dimensional Electronic Systems Institute for Basic Science (IBS)  Pohang 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