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However, its application for perpendicular magnetic anisotropy magnets, crucial for high\u2010density storage and memory devices, remains nondeterministic and inefficient. Here, a highly efficient approach is demonstrated to generate collinear spin currents by artificial modulation of interfacial symmetry, achieving 100% current\u2010induced field\u2010free SOT switching in CoFeB multilayers with perpendicular magnetization on stepped Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> substrates. This field\u2010free switching is primarily driven by the out\u2010of\u2010plane anti\u2010damping SOT generated by the planar spin Hall effect (PSHE), resulting from reduced interface symmetry due to orientation\u2010determined steps. Microscopic theoretical analysis confirms the presence and significance of PSHE in this process. Notably, this method for generating out\u2010of\u2010plane spin polarization along the collinear direction of the spin\u2010current with artificial modulation of interfacial symmetry, overcomes inherent material symmetry constraints. These findings provide a promising avenue for universal control of spin\u2013orbit torque, addressing challenges associated with low crystal symmetry and highlighting its great potential to advance the development of energy\u2010efficient spintronic devices technology.<\/jats:p>","DOI":"10.1002\/advs.202406924","type":"journal-article","created":{"date-parts":[[2024,9,24]],"date-time":"2024-09-24T10:58:48Z","timestamp":1727175528000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry"],"prefix":"10.1002","volume":"11","author":[{"ORCID":"https:\/\/orcid.org\/0009-0007-8048-0495","authenticated-orcid":false,"given":"Zhuoyi","family":"Li","sequence":"first","affiliation":[{"name":"National Key Laboratory of Spintronics Nanjing University  Suzhou 215163 China"},{"name":"Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic 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