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However, recent studies have shown that the field\u2010like efficiency (\n                    <jats:italic>\u03b2<\/jats:italic>\n                    <jats:sub>FL<\/jats:sub>\n                    ) can also play a major role in reducing\n                    <jats:italic>J<\/jats:italic>\n                    <jats:sub>c<\/jats:sub>\n                    . In this study, the\u00a0central inversion asymmetry\u00a0of Pt\u2010Co is significantly enhanced through interface engineering at the sub\u2010atomic layer of Ta, thereby inducing substantial alterations in the\n                    <jats:italic>\u03b2<\/jats:italic>\n                    <jats:sub>FL<\/jats:sub>\n                    \u00a0associated with the interface. The\u00a0\n                    <jats:italic>\u03b2<\/jats:italic>\n                    <jats:sub>FL<\/jats:sub>\n                    has shown a 123% increase, from \u22121.66\u00a0Oe\/(MA\u00a0cm\n                    <jats:sup>\u2212<\/jats:sup>\n                    <jats:sup>2<\/jats:sup>\n                    ) to \u20103.8\u00a0Oe\/(MA\u00a0cm\n                    <jats:sup>\u2212<\/jats:sup>\n                    <jats:sup>2<\/jats:sup>\n                    ). As a result, the multilayered Ta\/Pt\/Ta (0.3\u00a0nm insertion)\/Co\/Ta structure leads to a notable decrease in\n                    <jats:italic>J<\/jats:italic>\n                    <jats:sub>c<\/jats:sub>\n                    , exceeding a remarkable 90% compared to the simpler Ta\/Pt\/Co\/Ta structure,\u00a0ultimately\u00a0achieving a significantly low value of 2.7 MA\u00a0cm\n                    <jats:sup>\u2212<\/jats:sup>\n                    <jats:sup>2<\/jats:sup>\n                    . These findings pave the way for the development of highly efficient and energy\u2010saving spin\u2010orbit torque (SOT)\u2010based spintronic devices, where further optimizations in interface engineering can unlock even greater potential in terms of reduced power consumption and enhanced performance.\n                  <\/jats:p>","DOI":"10.1002\/advs.202412409","type":"journal-article","created":{"date-parts":[[2024,12,16]],"date-time":"2024-12-16T09:03:16Z","timestamp":1734339796000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Enhancing Field\u2010Like Efficiency Via Interface Engineering with Sub\u2010Atomic Layer Ta Insertion"],"prefix":"10.1002","volume":"12","author":[{"given":"Shuanghai","family":"Wang","sequence":"first","affiliation":[{"name":"School of Electronic Science and Engineering Nanjing University  Nanjing 210023 China"},{"name":"National Key laboratory of Spintronics Nanjing University  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