{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,24]],"date-time":"2026-10-24T01:44:00Z","timestamp":1792806240855,"version":"4.5.0"},"reference-count":53,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2025,10,8]],"date-time":"2025-10-08T00:00:00Z","timestamp":1759881600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"published-print":{"date-parts":[[2026,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    AgBiP\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>6<\/jats:sub>\n                    is a ferroelectric semiconductor with a Curie temperature above 300 K which also possesses a variety of functional capabilities. In this work, it is demonstrated that despite its intrinsically indirect bandgap, multilayer (ML) AgBiP\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>6<\/jats:sub>\n                    exhibits unexpectedly strong photoluminescence, attributed to its quasi\u2010direct band structure. The energy difference between the indirect and direct transitions is relatively small (\u22480.075\u00a0eV), as confirmed by both theoretical calculations and experimental observations. Temperature\u2010dependent optical measurements, corroborated by electronic band structure analysis, reveal the coexistence of indirect () and direct () bandgaps, with phonon\u2010assisted processes playing a significant role in the material's optoelectronic behaviors. The  and  transitions at 300 K are determined to be 1.46 and 1.535 eV, respectively. The indirect transition  is confirmed by transmittance (T) measurement, while the direct transition  is simultaneously detected through micro\u2010photoluminescence (\u00b5PL) and micro\u2010thermoreflectance (\u00b5TR) measurements. A stacked p\u2010Ga\n                    <jats:sub>0.5<\/jats:sub>\n                    In\n                    <jats:sub>0.5<\/jats:sub>\n                    Se\/n\u2010AgBiP\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>6<\/jats:sub>\n                    heterojunction solar cell is successfully fabricated, achieving a photoelectric conversion efficiency (PCE) up to \u22480.583%. Furthermore, AgBiP\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>6<\/jats:sub>\n                    is demonstrated as a promising photocatalyst, exhibiting a high degradation efficiency to organic dyes. ML\u2010AgBiP\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>6<\/jats:sub>\n                    exhibits a quasi\u2010direct bandgap and ferroelectric behavior at room temperature, making it a strong candidate for next\u2010generation electronic, optoelectronic, and environment\u2010protection functions.\n                  <\/jats:p>","DOI":"10.1002\/advs.202514717","type":"journal-article","created":{"date-parts":[[2025,10,8]],"date-time":"2025-10-08T21:14:59Z","timestamp":1759958099000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Exploration of Quasi\u2010Direct Band Edge in a Multilayer Ferroelectric Semiconductor for Applications in Van Der Waals Stacked Heterojunction Solar Cell and Photocatalytic Devices"],"prefix":"10.1002","volume":"13","author":[{"given":"Anna Milatul","family":"Ummah","sequence":"first","affiliation":[{"name":"Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology  Taipei 106 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yen\u2010Chang","family":"Su","sequence":"additional","affiliation":[{"name":"Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology  Taipei 106 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yu\u2010Hung","family":"Peng","sequence":"additional","affiliation":[{"name":"Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology  Taipei 106 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"You\u2010Xun","family":"Xu","sequence":"additional","affiliation":[{"name":"Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology  Taipei 106 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7195-208X","authenticated-orcid":false,"given":"Ching\u2010Hwa","family":"Ho","sequence":"additional","affiliation":[{"name":"Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology  Taipei 106 Taiwan"},{"name":"Taiwan Consortium of Emergent Crystalline Materials (TCECM) National Science and Technology Council  Taipei 106 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2025,10,8]]},"reference":[{"key":"e_1_2_9_1_1","doi-asserted-by":"publisher","DOI":"10.1039\/C9NR01261C"},{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-44916-w"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1134\/S0021364009020064"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/lsa.2013.1"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtadv.2023.100450"},{"key":"e_1_2_9_6_1","first-page":"8","volume":"5","author":"Ho C. 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