{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,4]],"date-time":"2026-03-04T16:09:36Z","timestamp":1772640576275,"version":"3.50.1"},"reference-count":31,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,1,4]],"date-time":"2026-01-04T00:00:00Z","timestamp":1767484800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000078","name":"Division of Materials Research","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000078","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Van der Waals bilayers assembled by mechanical stacking of 2D layers have been shown to realize symmetry\u2010breaking mechanisms, such as sliding\u2010 or moir\u00e9 ferroelectricity, which are without equivalent in 3D ferroelectrics. Here, we discuss emergent, highly unconventional behavior in thicker semiconducting few\u2010layer SnS(e) van der Waals ferroelectrics crystallizing in a distorted polar structure, obtained by bottom\u2010up synthesis. Electron diffraction at variable temperature demonstrates a gradual displacive transformation between the polar low\u2010temperature and symmetric high\u2010temperature phase, with significant variability in both the lattice constants and the Curie temperature (\n                    <jats:italic>T<\/jats:italic>\n                    <jats:sub>C<\/jats:sub>\n                    ) where the transition is completed. Strikingly, such variations are even found among stripe domains in individual crystals, where lattice constants and distortion angles change periodically between adjacent domains. The resulting spontaneously formed homo\u2010materials superlattices imply that such ferroelectrics adopt domain\u2010specific Curie temperatures, in sharp contrast with the long\u2010held notion of\n                    <jats:italic>T<\/jats:italic>\n                    <jats:sub>C<\/jats:sub>\n                    as a global materials parameter for a given ferroelectric.\n                  <\/jats:p>","DOI":"10.1002\/advs.202518341","type":"journal-article","created":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T06:31:37Z","timestamp":1767594697000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Displacive In\u2010Plane Ferroelectricity with Domain\u2010Specific Curie Temperature in Van der Waals Semiconductors"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3301-309X","authenticated-orcid":false,"given":"Peter","family":"Sutter","sequence":"first","affiliation":[{"name":"Department of Electrical &amp; Computer Engineering University of Nebraska\u2010Lincoln  Lincoln Nebraska USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Eli","family":"Sutter","sequence":"additional","affiliation":[{"name":"Department of Mechanical &amp; Materials Engineering University of Nebraska\u2010Lincoln  Lincoln Nebraska USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2026,1,4]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s43586\u2010022\u201000139\u20101"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.114"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.3c07952"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41578\u2010021\u201000375\u2010z"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.84.119"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.4c11341"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.3.412"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1669063"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.0606612103"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.111.1259"},{"key":"e_1_2_8_12_1","first-page":"269","article-title":"Neue Seignette Elektrika","volume":"11","author":"Busch G.","year":"1938","journal-title":"Helvetica Physica Acta"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1098\/rspa.1955.0139"},{"key":"e_1_2_8_14_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010020\u201016291\u20109"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.nantod.2021.101082"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010022\u201001312\u2010z"},{"key":"e_1_2_8_17_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010023\u201042947\u20103"},{"key":"e_1_2_8_18_1","doi-asserted-by":"crossref","DOI":"10.1002\/aelm.202201031","article-title":"Growth of Large\u2010Sized 2D Ultrathin SnSe Crystals with In\u2010Plane Ferroelectricity","volume":"9","author":"Chiu M.\u2010H.","year":"2023","journal-title":"Advanced Electronic Materials"},{"key":"e_1_2_8_19_1","doi-asserted-by":"publisher","DOI":"10.1021\/jacs.4c11558"},{"key":"e_1_2_8_20_1","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.2501509122"},{"key":"e_1_2_8_21_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.117.097601"},{"key":"e_1_2_8_22_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.6b00726"},{"key":"e_1_2_8_23_1","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.93.011001"},{"key":"e_1_2_8_24_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41524\u2010022\u201000724\u20108"},{"key":"e_1_2_8_25_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.2c09172"},{"key":"e_1_2_8_26_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.abd3230"},{"key":"e_1_2_8_27_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.abe8177"},{"key":"e_1_2_8_28_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010020\u20102970\u20109"},{"key":"e_1_2_8_29_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5c01647"},{"key":"e_1_2_8_30_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemmater.9b00177"},{"key":"e_1_2_8_31_1","doi-asserted-by":"publisher","DOI":"10.1051\/rphysap:01984001909080700"},{"key":"e_1_2_8_32_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.94.035304"}],"container-title":["Advanced Science"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/advs.202518341","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T06:31:38Z","timestamp":1767594698000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/advs.202518341"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,1,4]]},"references-count":31,"alternative-id":["10.1002\/advs.202518341"],"URL":"https:\/\/doi.org\/10.1002\/advs.202518341","archive":["Portico"],"relation":{},"ISSN":["2198-3844","2198-3844"],"issn-type":[{"value":"2198-3844","type":"print"},{"value":"2198-3844","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,1,4]]},"assertion":[{"value":"2025-09-17","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2025-12-19","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-01-04","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e18341"}}