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In this study, a unique phase of indium selenide is reported via Scanning Transmission Electron Microscopy (STEM) analysis in the synthesized large\u2010area films \u2013 which is named the  phase. The quintuple layers of the  phase, characterized by a unique zigzag atomic configuration with unequal indium\u2010selenium bond lengths from the middle selenium atom, are distinct from any other previously reported phase of indium selenide. Cross\u2010sectional STEM analysis has revealed that the  layers exhibit intralayer shifting. It is found that indium selenide films with  layers display electric\u2010field\u2010induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking of the inversion symmetry. Experimental observations of nonlinear optical phenomena \u2013 Second Harmonic Generation (SHG) responses further support this conclusion. This study reports a  phase of indium selenide showing ferroelectricity over large areas at room temperature in a low\u2010dimensional limit.<\/jats:p>","DOI":"10.1002\/advs.202518784","type":"journal-article","created":{"date-parts":[[2025,12,5]],"date-time":"2025-12-05T11:32:53Z","timestamp":1764934373000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity"],"prefix":"10.1002","volume":"13","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-1985-7368","authenticated-orcid":false,"given":"Fabia F.","family":"Athena","sequence":"first","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA 30332. 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