{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T10:09:03Z","timestamp":1790244543887,"version":"4.1.0"},"reference-count":52,"publisher":"Wiley","issue":"24","license":[{"start":{"date-parts":[[2026,3,2]],"date-time":"2026-03-02T00:00:00Z","timestamp":1772409600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,3,2]],"date-time":"2026-03-02T00:00:00Z","timestamp":1772409600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12474061"],"award-info":[{"award-number":["12474061"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52372113"],"award-info":[{"award-number":["52372113"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"published-print":{"date-parts":[[2026,4]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Ferroelectric HfO\n                    <jats:sub>2<\/jats:sub>\n                    \u2010based materials are promising candidates for memory applications because of their compatibility with complementary metal\u2010oxide\u2010semiconductor (CMOS) technology. However, the ferroelectric phase of HfO\n                    <jats:sub>2<\/jats:sub>\n                    is not the ground state, and collective displacements of oxygen atoms could generate multiple polarization switching paths, causing variations in measured polar magnitude across different experiments. To date, the mechanisms underpinning ferroelectric phase stabilization and the observed variations in polarization remain poorly understood. Here, by combining density functional theory (DFT) simulations and experimental measurements, we propose that (111) crystallography orientation confinement in Hf\n                    <jats:sub>0.5<\/jats:sub>\n                    Zr\n                    <jats:sub>0.5<\/jats:sub>\n                    O\n                    <jats:sub>2<\/jats:sub>\n                    film can effectively stabilize the ferroelectric phase. Moreover, to account for different polarization magnitudes observed experimentally, we calculate the electric polarizations along different crystal orientations, incorporating both crossing and non\u2010crossing switching paths. These results show that all the crossing switching paths always yield high polarizations. However, relatively high switching barriers in crossing paths make them less likely to occur in measurements. Finally, to achieve high polarization together with low switching barriers, specific oxygen vacancies and cation dopants that facilitate crossing pathways and yield the highest polarization (\u223c70 \u00b5C\/cm\n                    <jats:sup>2<\/jats:sup>\n                    ) are determined. These insights clarify the preferred (111) orientation and polarization behavior of HfO\n                    <jats:sub>2<\/jats:sub>\n                    \u2010based films and advance the design of high\u2010performance ferroelectric devices.\n                  <\/jats:p>","DOI":"10.1002\/advs.202521730","type":"journal-article","created":{"date-parts":[[2026,3,9]],"date-time":"2026-03-09T02:54:13Z","timestamp":1773024853000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Orientation\u2010Confinement\u2010Engineered Stabilization of Ferroelectricity in HfO\n                    <sub>2<\/sub>\n                    toward Maximum Polarization"],"prefix":"10.1002","volume":"13","author":[{"given":"Fatoye","family":"Sawyerr","sequence":"first","affiliation":[{"name":"Research Center for Advanced Lubrication and Sealing Materials School of Materials Science and Engineering Northwestern Polytechnical University  Xi'an Shaanxi China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yongqing","family":"Sun","sequence":"additional","affiliation":[{"name":"College of Electronics and Information Shandong Key Laboratory of Micro\u2010nano Packaging and System Integration Qingdao University  Qingdao China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zekun","family":"Zhang","sequence":"additional","affiliation":[{"name":"Research Center for Advanced Lubrication and Sealing Materials School of Materials Science and Engineering Northwestern Polytechnical University  Xi'an Shaanxi China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kang","family":"Jia","sequence":"additional","affiliation":[{"name":"Research Center for Advanced Lubrication and Sealing Materials School of Materials Science and Engineering Northwestern Polytechnical University  Xi'an Shaanxi 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Materials Science and Engineering Northwestern Polytechnical University  Xi'an China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoli","family":"Fan","sequence":"additional","affiliation":[{"name":"Research Center for Advanced Lubrication and Sealing Materials School of Materials Science and Engineering Northwestern Polytechnical University  Xi'an Shaanxi China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Li\u2010min","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Physics Beihang University  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shifeng","family":"Wen","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Northwestern Polytechnical University  Xi'an 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China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingsheng","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National University of Singapore  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,3,2]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3634052"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41524\u2010024\u201001352\u20100"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4916707"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361\u20106463\/ab7fd4"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41524\u2010024\u201001344\u20100"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41578\u2010022\u201000431\u20102"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.108.L060102"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4947490"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0035139"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201900303"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42005\u2010025\u201002438\u2010x"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.3.054404"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563\u2010021\u201001098\u2010w"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.90.140103"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.1c00110"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0064113"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010023\u201044207\u2010w"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpclett.3c00566"},{"key":"e_1_2_9_20_1","doi-asserted-by":"crossref","unstructured":"D.Vanderbilt 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