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Here, we demonstrate that Li\u207a substitution at Cu sites (Cu\n                    <jats:sub>1\u2010x<\/jats:sub>\n                    Li\n                    <jats:sub>x<\/jats:sub>\n                    InP\n                    <jats:sub>2<\/jats:sub>\n                    S\n                    <jats:sub>6<\/jats:sub>\n                    ,\n                    <jats:italic>x<\/jats:italic>\n                    \u2264 0.1) concurrently enhances ferroelectric and ionic conductivities, and enriches the polarization configurations of CuInP\n                    <jats:sub>2<\/jats:sub>\n                    S\n                    <jats:sub>6<\/jats:sub>\n                    . With Li\u2010doping, benefiting from the strengthened Cu\u2010S interlayer bond and reduced interlayer spacing, the Curie temperature increases from 315\u00a0K (pristine) to 327\u00a0K (\n                    <jats:italic>x<\/jats:italic>\n                    = 0.1), and Cu\u207a ionic conductivity activation energy is lowered from \u223c0.6\u00a0eV (pristine) to \u223c0.4\u00a0eV (\n                    <jats:italic>x<\/jats:italic>\n                    = 0.1). Meanwhile, the high\u2010polarization state is stabilized and gives rise to the coexistence of low\u2010 and high\u2010polarization states (LP and HP), which lays a fertile ground for topological polar texture. Numerous polar bubbles and labyrinth domains with varied sizes and shapes are observed at the border between HP and LP phases. Interestingly, a strain gradient switches the HP to the LP state, establishing an intriguing flexoelectrical response and providing a mechanical pathway to tune and confine the polar texture. This work provides a feasible chemical strategy to modulate ferroelectric properties and polar configurations in vdW ferroelectrics, offering promising opportunities for advanced electronics, neuromorphic computing, and topotronics.\n                  <\/jats:p>","DOI":"10.1002\/advs.202523774","type":"journal-article","created":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T09:47:48Z","timestamp":1767606468000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Chemical Doping Engineering of Polarization and Topological Textures in van der Waals Ferroelectric CuInP\n                    <sub>2<\/sub>\n                    S\n                    <sub>6<\/sub>"],"prefix":"10.1002","volume":"13","author":[{"ORCID":"https:\/\/orcid.org\/0009-0009-2959-3835","authenticated-orcid":false,"given":"Lei","family":"Gao","sequence":"first","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Centrer for Physical Mechanics and Biophysics Institute of Neutron Science and Technology School of Physics Sun Yat\u2010sen University  Guangzhou P. R. China"},{"name":"State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat\u2010sen University  Guangzhou P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0909-347X","authenticated-orcid":false,"given":"Wenhao","family":"Li","sequence":"additional","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Centrer for Physical Mechanics and Biophysics Institute of Neutron Science and Technology School of Physics Sun Yat\u2010sen University  Guangzhou P. R. China"},{"name":"State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat\u2010sen University  Guangzhou P. R. 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