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In this study, the influence of electrode configuration in different device architectures are systematically investigated on their imprint effect. By tuning the work function of La\n                    <jats:sub>0.7<\/jats:sub>\n                    Sr\n                    <jats:sub>0.3<\/jats:sub>\n                    MnO\n                    <jats:sub>3<\/jats:sub>\n                    (LSMO) electrodes through oxygen pressure during deposition, precise control over the built\u2010in voltage offset (V\n                    <jats:sub>offset<\/jats:sub>\n                    ) in ferroelectric capacitors are demonstrated. This results reveal that higher oxygen pressures increase the work function of LSMO, effectively compensating for V\n                    <jats:sub>offset<\/jats:sub>\n                    and enhancing device stability. Finally, a ferroelectric device with a hybrid bottom electrode of LSMO and SrRuO\n                    <jats:sub>3<\/jats:sub>\n                    is optimized to mitigate the imprint effect. The optimal device showcases small coercive voltage of 0.3\u00a0V, a minimal V\n                    <jats:sub>offset<\/jats:sub>\n                    of 0.06\u00a0V, excellent endurance (electrical cycle up to 10\n                    <jats:sup>9<\/jats:sup>\n                    ), and robust zero bias applied polarization retention. These findings provide a practical guideline for electrode design in ferroelectric devices, addressing the imprint effect and improving operational reliability. This approach, combining material tuning and in situ diagnostics, offers a pathway to optimize ferroelectric device performance, with implications for advancing ultra\u2010low\u2010power electronics.\n                  <\/jats:p>","DOI":"10.1002\/advs.70011","type":"journal-article","created":{"date-parts":[[2025,5,22]],"date-time":"2025-05-22T09:18:59Z","timestamp":1747905539000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect"],"prefix":"10.1002","volume":"12","author":[{"given":"Yu\u2010Wei","family":"Chen","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering National Yang Ming Chiao Tung University  Hsinchu 300093 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tung\u2010Yuan","family":"Yu","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Research Institute  Hsinchu 300091 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chun\u2010Wei","family":"Huang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Feng Chia University  Taichung 407102 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tzu\u2010Hsuan","family":"Yu","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National Yang Ming Chiao Tung University  Hsinchu 300093 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yung\u2010Chi","family":"Su","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National Yang Ming Chiao Tung University  Hsinchu 300093 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chao\u2010Rung","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National Yang Ming Chiao Tung University  Hsinchu 300093 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei\u2010Chen","family":"Hung","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National Yang Ming Chiao Tung University  Hsinchu 300093 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pei\u2010Yin","family":"Chang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National Yang Ming Chiao Tung University  Hsinchu 300093 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bhagwati","family":"Prasad","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering Indian Institute of Science  Bangalore Karnataka 560012 India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yu\u2010Chuan","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National Yang Ming Chiao Tung University  Hsinchu 300093 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ramamoorthy","family":"Ramesh","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Rice University  Texas 77005 USA"},{"name":"Department of Materials Science and Engineering University of California  Berkely 94720 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6129-8547","authenticated-orcid":false,"given":"Yen\u2010Lin","family":"Huang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering National Yang Ming Chiao Tung University  Hsinchu 300093 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2025,5,22]]},"reference":[{"key":"e_1_2_9_1_1","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-662-04307-3"},{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.115531"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1984075"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-018-0770-2"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-018-0275-2"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-0461-5"},{"key":"e_1_2_9_7_1","unstructured":"D. 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