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Their unique combination of spontaneous switchable polarization, strong light\u2010matter coupling, and van der Waals (vdW) interface compatibility provides an ideal platform for next\u2010generation optoelectronic vision sensors. Coupling ferroelectric polarization with photoresponse, 2D ferroelectric materials such as\n                    <jats:italic>\u03b1<\/jats:italic>\n                    \u2010In\n                    <jats:sub>2<\/jats:sub>\n                    Se\n                    <jats:sub>3<\/jats:sub>\n                    , CuInP\n                    <jats:sub>2<\/jats:sub>\n                    S\n                    <jats:sub>6<\/jats:sub>\n                    (CIPS), SnS, and WTe\n                    <jats:sub>3<\/jats:sub>\n                    enable non\u2010volatile modulation of photocarrier transport, facilitating adaptive visual perception analogous to the human retina. These 2D ferroelectric photonic devices demonstrate synaptic plasticity, short\u2010term and long\u2010term memory, and optical potentiation and depression characteristics under visible and near\u2010infrared excitation. Integrating ferroelectricity into optoelectronic architectures addresses the von\u2010Neumann bottleneck by enabling in\u2010sensor computing, where data are sensed, stored, and processed locally, minimizing latency and energy consumption. This review provides a comprehensive overview of 2D ferroelectric materials and their device architectures in the memristive and memtransistors devices structures for optoelectronic vision sensors, highlighting their polarization mechanism, light\u2010driven conductance modulation, and neuromorphic functionalities. Additionally, current challenges, such as scalability, polarization fatigue, and interface engineering, have also been extensively discussed together with heterostructure design and hybrid ferroelectric\u2010semiconductor integration toward energy\u2010efficient bio\u2010inspired vision systems.\n                  <\/jats:p>","DOI":"10.1002\/advs.74794","type":"journal-article","created":{"date-parts":[[2026,3,14]],"date-time":"2026-03-14T19:26:25Z","timestamp":1773516385000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Optoelectronic\u2010Driven van der Waals Ferroelectric Materials\u2010Based Memory Devices for Retinomorphic and In\u2010Sensory Hardware"],"prefix":"10.1002","volume":"13","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4888-9596","authenticated-orcid":false,"given":"Parthasarathi","family":"Pal","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering Indian Institute of Technology Patna  Bihar India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3796-923X","authenticated-orcid":false,"given":"Yeong\u2010Her","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering National Cheng Kung University  Tainan Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5382-2006","authenticated-orcid":false,"given":"Sanjay","family":"Kumar","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering Indian Institute of Technology Patna  Bihar India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6267-6909","authenticated-orcid":false,"given":"Themis","family":"Prodromakis","sequence":"additional","affiliation":[{"name":"Centre For Electronics Frontiers School of Engineering The University of Edinburgh  Scotland UK"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,3,14]]},"reference":[{"key":"e_1_2_11_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2018.2789723"},{"key":"e_1_2_11_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010020\u20101942\u20104"},{"key":"e_1_2_11_4_1","doi-asserted-by":"crossref","unstructured":"X.Peng S.Huang Y.Luo X.Sun andS.Yu \u201cDNN+ NeuroSim: an End\u2010to\u2010End Benchmarking Framework for Compute\u2010in\u2010memory Accelerators with Versatile Device Technologies \u201d in2019 IEEE International Electron Devices Meeting (IEDM)(IEEE 2019) 32\u201335 https:\/\/doi.org\/10.1109\/IEDM19573.2019.8993491.","DOI":"10.1109\/IEDM19573.2019.8993491"},{"key":"e_1_2_11_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/14819"},{"key":"e_1_2_11_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010022\u201000714\u20100"},{"key":"e_1_2_11_7_1","doi-asserted-by":"crossref","unstructured":"P.Pal S.Thunder M.\u2010J.Tsai P.\u2010T.Huang andY. 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