{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,28]],"date-time":"2026-10-28T07:09:13Z","timestamp":1793171353904,"version":"4.5.0"},"reference-count":48,"publisher":"Wiley","issue":"43","license":[{"start":{"date-parts":[[2026,6,1]],"date-time":"2026-06-01T00:00:00Z","timestamp":1780272000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,6,1]],"date-time":"2026-06-01T00:00:00Z","timestamp":1780272000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2022YFB3602903"],"award-info":[{"award-number":["2022YFB3602903"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100019320","name":"Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting","doi-asserted-by":"publisher","award":["ZDSYS201707281632549"],"award-info":[{"award-number":["ZDSYS201707281632549"]}],"id":[{"id":"10.13039\/501100019320","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012228","name":"Development and Reform Commission of Shenzhen Municipality","doi-asserted-by":"publisher","award":["XMHT20220114005"],"award-info":[{"award-number":["XMHT20220114005"]}],"id":[{"id":"10.13039\/501100012228","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"published-print":{"date-parts":[[2026,8]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Colloidal lead sulfide quantum dots are attractive for short\u2010wave infrared photodetectors due to their tunable bandgap and solution\u2010process compatibility, yet device performance is often limited by high dark current, inefficient carrier extraction, and poor stability. Here, we report a new strategy of combining thermal spin\u2010coating and annealing that improves quantum dot film quality by regulating solvent evaporation kinetics and stacking behavior during deposition. Elevating the substrate temperature during spin\u2010coating induces dense and uniform quantum dot assemblies with reduced trap density and improved interfacial contact. Photodetectors fabricated at an optimized temperature of 65\u00b0C exhibit substantially enhanced performance, including a responsivity of 0.765 A\/W, a specific detectivity of 3.57 \u00d7 10\n                    <jats:sup>1<\/jats:sup>\n                    <jats:sup>1<\/jats:sup>\n                    Jones, and a \u22123\u00a0dB bandwidth of 108\u00a0kHz, accompanied by over 50% reduction in dark current density. Importantly, the optimized devices show improved long\u2010term stability, retaining lower dark current and higher external quantum efficiency after prolonged storage without encapsulation. Leveraging these advantages, the photodetectors are further integrated into an imaging array and applied to non\u2010invasive glucose monitoring using dual\u2010wavelength ratiometric detection. This work establishes thermal spin\u2010coating as a simple and scalable route toward high\u2010performance, stable quantum dot infrared photodetectors for imaging and biomedical sensing applications.\n                  <\/jats:p>","DOI":"10.1002\/advs.75944","type":"journal-article","created":{"date-parts":[[2026,6,1]],"date-time":"2026-06-01T07:38:01Z","timestamp":1780299481000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Thermal Spin Coated PbS QD SWIR Imager for Non\u2010Invasive Glucose Monitoring"],"prefix":"10.1002","volume":"13","author":[{"given":"Lei","family":"Rao","sequence":"first","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shuo","family":"Cheng","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qian","family":"Chen","sequence":"additional","affiliation":[{"name":"College of Engineering Physics Shenzhen Technology University  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiankai","family":"Wang","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingrui","family":"Ma","sequence":"additional","affiliation":[{"name":"Institute of Nanoscience and Applications, and Department of Electronic and Electrical Engineering Southern University of Science and Technology  Shenzhen 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