{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,16]],"date-time":"2026-09-16T05:53:21Z","timestamp":1789538001242,"version":"build-2803163510"},"reference-count":31,"publisher":"Wiley","issue":"51","license":[{"start":{"date-parts":[[2026,6,26]],"date-time":"2026-06-26T00:00:00Z","timestamp":1782432000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,6,26]],"date-time":"2026-06-26T00:00:00Z","timestamp":1782432000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001321","name":"National Research Foundation","doi-asserted-by":"publisher","award":["RS\u20102024\u201000401234"],"award-info":[{"award-number":["RS\u20102024\u201000401234"]}],"id":[{"id":"10.13039\/501100001321","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001321","name":"National Research Foundation","doi-asserted-by":"publisher","award":["RS\u20102026\u201025496192"],"award-info":[{"award-number":["RS\u20102026\u201025496192"]}],"id":[{"id":"10.13039\/501100001321","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"published-print":{"date-parts":[[2026,9]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Controlling crystalline phase and interfacial strain remains a central challenge in van der Waals (vdW) epitaxy for polymorphic two\u2010dimensional (2D) materials. Tin sulfides represent an ideal platform, yet deterministic phase control and growth\u2010pathway effects on phase stability and strain accommodation remain unexplored. Here, we demonstrate growth\u2010pathway\u2010controlled vdW epitaxy of phase\u2010selective tin sulfides on WSe\n                    <jats:sub>2<\/jats:sub>\n                    using a two\u2010zone chemical vapor deposition (CVD) system. Under sulfur\u2010rich conditions, tin sulfide adopts a hexagonal SnS\n                    <jats:sub>2<\/jats:sub>\n                    structure that shares the trigonal symmetry of WSe\n                    <jats:sub>2<\/jats:sub>\n                    , enabling a unique in\u2010plane epitaxial alignment despite a large lattice mismatch. Under sulfur\u2010deficient conditions, tin sulfide stabilizes in orthorhombic SnS, whose symmetry is incompatible with WSe\n                    <jats:sub>2<\/jats:sub>\n                    . As a result, SnS nucleates with multiple energetically comparable epitaxial registries. Direct growth of SnS on WSe\n                    <jats:sub>2<\/jats:sub>\n                    generates substrate\u2010mediated strain, leading to local lattice distortion and phase evolution from \u03b1\u2010 to \u03b2\u2032\u2010SnS. Through sequential control of the precursor temperature, SnS is grown on a pre\u2010formed SnS\n                    <jats:sub>2<\/jats:sub>\n                    rather than directly on WSe\n                    <jats:sub>2<\/jats:sub>\n                    . This sequential growth suppresses substrate\u2010induced strain and yields deformation\u2010free \u03b1\u2010SnS via a SnS\n                    <jats:sub>2<\/jats:sub>\n                    vdW buffer layer. These findings establish growth\u2010pathway\u2010controlled vdW epitaxy as a strategy for decoupling epitaxial alignment from strain accommodation, enabling deterministic phase control and structural integrity in lattice\u2010mismatched vdW heterostructures.\n                  <\/jats:p>","DOI":"10.1002\/advs.76199","type":"journal-article","created":{"date-parts":[[2026,6,26]],"date-time":"2026-06-26T12:01:48Z","timestamp":1782475308000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Growth\u2010Pathway\u2010Controlled van der Waals Epitaxy of Phase\u2010Selective Tin Sulfides"],"prefix":"10.1002","volume":"13","author":[{"given":"Jaehyeok","family":"Lee","sequence":"first","affiliation":[{"name":"Department of Material Science and Engineering Seoul National University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinwoo","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Material Science and Engineering Seoul National University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Gwan\u2010Hyoung","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Material Science and Engineering Seoul National University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,6,26]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053\u20101583\/ada0b7"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adj5379"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.4c01883"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0090373"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apmt.2021.100975"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adg6696"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563\u2010023\u201001596\u2010z"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1039\/C7NR07607J"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.0c08842"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2015.12.001"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.solener.2015.12.013"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5b00079"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.2c05534"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010017\u201002093\u2010z"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.9b01419"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202301172"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010020\u201016291\u20109"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.adp8444"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5c01639"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010019\u201013488\u20105"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1111\/jmi.12652"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1039\/C7RA09430B"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.1039\/C5NR07675G"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202400355"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202406140"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.5c00368"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1093\/nsr\/nwaf119"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201804133"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1038\/nphys2272"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1007\/s10854\u2010019\u201001431\u20109"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0062857"}],"container-title":["Advanced 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