{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T11:29:12Z","timestamp":1787052552925,"version":"build-2736575974"},"reference-count":44,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T00:00:00Z","timestamp":1787011200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T00:00:00Z","timestamp":1787011200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100008628","name":"Ministry of Electronics and Information technology","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100008628","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    A simple iontronic memtransistor capable of emulating synaptic plasticity and cognitive functions showcases high performance and low energy consumption, fostering admiration for its efficiency. Here, we report the versatile, high\u2010performance memtransistor behavior of a solid polymer electrolyte\u2010gated few\u2010layer thick two\u2010dimensional molybdenum disulfide (2D MoS\n                    <jats:sub>2<\/jats:sub>\n                    ) channel. Transfer characteristics exhibit pinched hysteresis, confirming n\u2010channel enhancement\u2010mode operation, supported by the low\u2010voltage drain characteristics under the influence of the electrical double layer (EDL) formed by iontronic gating. The memtransistor shows a reproducible non\u2010volatile memory window in its transfer characteristics with conductance retention exceeding 10\n                    <jats:sup>3<\/jats:sup>\n                    s and endurance beyond 10\n                    <jats:sup>3<\/jats:sup>\n                    switching cycles. Mechanistic studies reveal coupled slow ion migration and dipolar relaxation processes coexisting with purely electronic transport in the 2D material channel, highlighting mixed ionic\u2010electronic carrier dynamics. Using tailored input\u2010output pulse schemes, the device demonstrates key synaptic and cognitive learning functionalities with lower energy consumption per event and faster response speed down to the microsecond regime. Furthermore, higher\u2010order behaviors such as Atkinson\u2010Shiffrin\u2010type memory behavior, Pavlovian associative learning, and logic gate operations are achieved. These achievements confirm the potential of our 2D iontronic memtransistor (IMT) as a reliable, reproducible building block for next\u2010generation brain\u2010inspired computing systems.\n                  <\/jats:p>","DOI":"10.1002\/advs.77150","type":"journal-article","created":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T11:08:21Z","timestamp":1787051301000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Analog Synaptic Plasticity in 2D Layered Material Iontronic Memtransistors for Brain\u2010Inspired Computing"],"prefix":"10.1002","author":[{"given":"Puranjay","family":"Saha","sequence":"first","affiliation":[{"name":"eNDR Laboratory School of Physics IISER Thiruvananthapuram  Trivandrum Kerala India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1835-6139","authenticated-orcid":false,"given":"Saptarshi","family":"Bej","sequence":"additional","affiliation":[{"name":"School of Data Science IISER Thiruvananthapuram  Trivandrum Kerala India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4750-0542","authenticated-orcid":false,"given":"Bikas C.","family":"Das","sequence":"additional","affiliation":[{"name":"eNDR Laboratory School of Physics IISER Thiruvananthapuram  Trivandrum Kerala India"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,8,18]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature25747"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010025\u201008742\u20104"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010023\u201006791\u20101"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010024\u201007902\u20102"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5c11528"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010021\u201004362\u2010w"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5c02397"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563\u2010018\u20100248\u20105"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010025\u201059815\u2010x"},{"issue":"1","key":"e_1_2_9_11_1","doi-asserted-by":"crossref","first-page":"63","DOI":"10.1038\/s41699-023-00427-8","article-title":"Ionotronic WS2 Memtransistors for 6\u2010bit Storage and Neuromorphic Adaptation at High Temperature","volume":"7","author":"Mallik S. 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