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Reducing absorber thickness lowers manufacturing cost and critical raw material consumption but introduces optical and electrical losses due to incomplete light absorption and increased rear interface recombination. Rear recombination can be mitigated through Ga grading and\/or rear contact passivation, for example using tunnel oxide as in c\u2010Si TOPCon technology. In this work, a full coverage plasma enhanced chemically vapor deposited 8\u00a0nm porous SiO\n                    <jats:sub>x<\/jats:sub>\n                    passivation layer was implemented in ultra\u2010thin (Ag,Cu)(In,Ga)Se\n                    <jats:sub>2<\/jats:sub>\n                    (ACIGS) solar cells and compared with patterned passivation layers (\u223c70% coverage) and an unpassivated reference. Standard current\u2010voltage and external quantum efficiency characterization methods show that the complete passivation yielded the highest performance, achieving 16.4% efficiency, a 2% absolute improvement over the reference. Patterned samples showed enhanced performance to a lower extent. Elemental and structural analysis showed that the SiO\n                    <jats:sub>x<\/jats:sub>\n                    layers remained intact after 550\u00b0C deposition of the 700\u00a0nm ACIGS absorber. Notably, a MoSe\n                    <jats:sub>2<\/jats:sub>\n                    interfacial layer formed between the full SiO\n                    <jats:sub>x<\/jats:sub>\n                    layer and Mo contact, likely due to Na and\/or Se diffusion through SiO\n                    <jats:sub>x<\/jats:sub>\n                    pores. Combining near\u2010complete passivation and the ohmic MoSe\n                    <jats:sub>2<\/jats:sub>\n                    contact may explain the improved performance.\n                  <\/jats:p>","DOI":"10.1002\/advs.77285","type":"journal-article","created":{"date-parts":[[2026,9,27]],"date-time":"2026-09-27T18:00:31Z","timestamp":1790532031000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Unveiling a Near\u2010Total Rear Passivation for High Performance of Ultra\u2010Thin ACIGS"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7786-3638","authenticated-orcid":false,"given":"Xavier L.","family":"Pinheiro","sequence":"first","affiliation":[{"name":"INL \u2013 International Iberian Nanotechnology Laboratory  Avenida Mestre Jos\u00e9 Veiga Braga Portugal"},{"name":"Departamento De F\u00edsica da Universidade de Aveiro Campus Universit\u00e1rio de Santiago  Aveiro Portugal"},{"name":"CICECO Aveiro Institute of Materials University of Aveiro Campus Universit\u00e1rio de Santiago  Aveiro Portugal"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6370-9119","authenticated-orcid":false,"given":"Ant\u00f3nio J. 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