{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T17:05:09Z","timestamp":1790787909625,"version":"4.1.0"},"reference-count":51,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,27]],"date-time":"2026-09-27T00:00:00Z","timestamp":1790467200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,9,27]],"date-time":"2026-09-27T00:00:00Z","timestamp":1790467200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["22175136"],"award-info":[{"award-number":["22175136"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100011436","name":"State Key Laboratory of Electrical Insulation and Power Equipment","doi-asserted-by":"publisher","award":["EIPE23127"],"award-info":[{"award-number":["EIPE23127"]}],"id":[{"id":"10.13039\/501100011436","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Two\u2010dimensional materials have attracted much attention in various research fields. The phosphorene structures with various allotropes, another type of elemental 2D materials after graphene, have been demonstrated to have unique optoelectronic and photoelectronic properties. However, an inert environment is required to measure phosphorene\u2010based field effect transistors. The experimentally obtained charge mobility from devices is significantly lower than the intrinsic values due to high contact resistance between phosphorene and electrodes. Here, tellurium atoms have been introduced for the first time to significantly lower the contact resistance, enabling measurements under ambient conditions to obtain high charge mobility. The crystal structure of violet tellurium phosphorus was determined by single\u2010crystal X\u2010ray diffraction to keep the same crystal structure as violet phosphorus, where the P9 position is occupied by tellurium\/phosphorus atoms as a mixed Te1\/P9 site. The p\u2010type violet phosphorene nanosheet (2.04 cm\n                    <jats:sup>2<\/jats:sup>\n                    V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    ) was switched into a high\u2010performance n\u2010type violet tellurium phosphorene nanosheet (134.12 cm\n                    <jats:sup>2<\/jats:sup>\n                    V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    ). The contact resistance between channel materials and electrodes was found to be significantly reduced from 550\u2013860 M\u03a9 for violet phosphorene nanosheets to 1.13\u20131.80 M\u03a9 for violet tellurium phosphorene nanosheets due to tellurium substitution, resulting in robust performance of violet phosphorene under ambient conditions.\n                  <\/jats:p>","DOI":"10.1002\/advs.77560","type":"journal-article","created":{"date-parts":[[2026,9,27]],"date-time":"2026-09-27T18:00:31Z","timestamp":1790532031000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["High\u2010Performance Violet Phosphorene\u2010Based Device via Tellurium Doping\u2010Induced Contact Resistance Reduction"],"prefix":"10.1002","author":[{"given":"Zhuorui","family":"Wen","sequence":"first","affiliation":[{"name":"State Key Laboratory of Electrical Insulation and Power Equipment Center of Nanomaterials for Renewable Energy School of Electrical Engineering Xi'an Jiaotong University  Xi'an Shanxi People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xuewen","family":"Zhao","sequence":"additional","affiliation":[{"name":"State Grid Integrated Energy Service Group Co., Ltd.  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9556-1147","authenticated-orcid":false,"given":"Wenju","family":"Zhou","sequence":"additional","affiliation":[{"name":"Center for High Pressure Science and Technology Advanced Research (HPSTAR)  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenqi","family":"Mu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electrical Insulation and Power Equipment Center of Nanomaterials for Renewable Energy School of Electrical Engineering Xi'an Jiaotong University  Xi'an Shanxi People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rui","family":"Zhai","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electrical Insulation and Power Equipment Center of Nanomaterials for Renewable Energy School of Electrical Engineering Xi'an Jiaotong University  Xi'an Shanxi People's Republic 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