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However, once released from epitaxial constraint and transferred directly onto metallic gates, the BaTiO\n                    <jats:sub>3<\/jats:sub>\n                    (BTO) membranes under study preferentially adopt an in\u2010plane polarization configuration, suppressing out\u2010of\u2010plane ferroelectric coupling at room temperature. Here, we demonstrate that single\u2010layer MoS\n                    <jats:sub>2<\/jats:sub>\n                    field\u2010effect transistors gated by 25\u00a0nm freestanding BTO exhibit excellent electrostatic control at room temperature, with subthreshold swings down to 85\u00a0mV dec\n                    <jats:sup>\u2212<\/jats:sup>\n                    <jats:sup>1<\/jats:sup>\n                    and high on\/off ratios, yet negligible hysteresis, highlighting the effectiveness of depolarized BTO as an ultrahigh\u2010\u03ba dielectric. Upon cooling, robust counter\u2010clockwise ferroelectric hysteresis emerges, with memory windows of \u223c0.4\u00a0V, stable over 500 cycles and retention times exceeding 10\n                    <jats:sup>5<\/jats:sup>\n                    s. Temperature\u2010dependent x\u2010ray diffraction reveals structural signatures consistent with the bulk phase transitions sequence of BTO and confirms a predominant in\u2010plane lattice orientation near room temperature. The combined electrical and structural analysis indicates that phase\u2010dependent polarization anisotropy, together with domain\u2010wall dynamics and interfacial screening processes, stabilizes an out\u2010of\u2010plane polarization component at low temperature in the rhombohedral and orthorhombic phases.\n                  <\/jats:p>","DOI":"10.1002\/advs.77639","type":"journal-article","created":{"date-parts":[[2026,9,9]],"date-time":"2026-09-09T05:15:45Z","timestamp":1788930945000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Mechanisms of Temperature\u2010Dependent Hysteresis in Freestanding BaTiO\n                    <sub>3<\/sub>\n                    \/MoS\n                    <sub>2<\/sub>\n                    Heterostructures"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-2100-8241","authenticated-orcid":false,"given":"Thomas","family":"Pucher","sequence":"first","affiliation":[{"name":"2D Foundry Research Group Instituto de Ciencia de Materiales de Madrid (ICMM\u2010CSIC)  Madrid Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6346-1475","authenticated-orcid":false,"given":"Federico","family":"Mompe\u00e1n","sequence":"additional","affiliation":[{"name":"2D Foundry Research Group Instituto de Ciencia de Materiales de Madrid (ICMM\u2010CSIC)  Madrid Spain"},{"name":"Unidad Asociada UCM\/CSIC \u201cLaboratorio de Heteroestructuras Con Aplicaci\u00f3n En Spintr\u00f3nica\u201d  Madrid Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8751-8643","authenticated-orcid":false,"given":"V\u00edctor","family":"Rouco","sequence":"additional","affiliation":[{"name":"Unidad 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