{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T16:09:11Z","timestamp":1790784551870,"version":"4.1.0"},"reference-count":152,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T00:00:00Z","timestamp":1790726400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T00:00:00Z","timestamp":1790726400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["92580129"],"award-info":[{"award-number":["92580129"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62304151"],"award-info":[{"award-number":["62304151"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62474124"],"award-info":[{"award-number":["62474124"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52125205"],"award-info":[{"award-number":["52125205"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52532005"],"award-info":[{"award-number":["52532005"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52250398"],"award-info":[{"award-number":["52250398"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006606","name":"Natural Science Foundation of Tianjin Municipality","doi-asserted-by":"publisher","award":["25JCZDJC01450"],"award-info":[{"award-number":["25JCZDJC01450"]}],"id":[{"id":"10.13039\/501100006606","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006606","name":"Natural Science Foundation of Tianjin Municipality","doi-asserted-by":"publisher","award":["24JCQNJC00520"],"award-info":[{"award-number":["24JCQNJC00520"]}],"id":[{"id":"10.13039\/501100006606","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2023M742585"],"award-info":[{"award-number":["2023M742585"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004826","name":"Natural Science Foundation of Beijing Municipality","doi-asserted-by":"publisher","award":["2222088"],"award-info":[{"award-number":["2222088"]}],"id":[{"id":"10.13039\/501100004826","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004826","name":"Natural Science Foundation of Beijing Municipality","doi-asserted-by":"publisher","award":["L223006"],"award-info":[{"award-number":["L223006"]}],"id":[{"id":"10.13039\/501100004826","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>Flash memory remains the dominant nonvolatile storage technology, yet its continued scaling is increasingly constrained by the coupled requirements of fast programming, low operating energy, and long\u2010term reliability. Recent advances in 2D materials and van der Waals heterostructures provide an opportunity not merely to miniaturize flash cells, but to reconfigure the charge\u2010programming physics itself. In this Review, we introduce interface\u2010controlled charge programming as a unifying framework for understanding and designing 2D flash memories. We discuss how atomically thin channels, clean van der Waals interfaces, engineered tunneling barriers, controllable trap states, and contact modulation regulate charge injection, transport, trapping, and confinement. This framework connects device\u2010level metrics, including nanosecond\u2010to\u2010subnanosecond programming, low\u2010energy operation, long retention, and high endurance, with emerging system\u2010level functions such as multilevel storage, in\u2010memory computing, sensing\u2010memory\u2010computing integration, and CMOS\u2010compatible heterogeneous integration. We further identify critical challenges in wafer\u2010scale synthesis, device variability, reliability benchmarking, and array\u2010level implementation. By shifting flash memory design from bulk\u2010field\u2010driven tunneling to interface\u2010programmed charge control, 2D materials may enable a new class of nonvolatile devices for storage\u2013computing convergence beyond conventional silicon flash.<\/jats:p>","DOI":"10.1002\/advs.78009","type":"journal-article","created":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T15:37:41Z","timestamp":1790782661000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Two\u2010Dimensional Flash Memory: Materials, Interfaces, and Storage\u2013Computing Convergence"],"prefix":"10.1002","author":[{"given":"Zhiyuan","family":"Wang","sequence":"first","affiliation":[{"name":"State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto\u2010electronics Engineering Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fanyi","family":"Meng","sequence":"additional","affiliation":[{"name":"School of Microelectronics Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fanying","family":"Meng","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto\u2010electronics Engineering Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shida","family":"Huo","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto\u2010electronics Engineering Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junxi","family":"Xu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto\u2010electronics Engineering Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yaohui","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto\u2010electronics Engineering Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuexuan","family":"Ma","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto\u2010electronics Engineering Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuan","family":"Xie","sequence":"additional","affiliation":[{"name":"School of Electronics and Information Engineering Tiangong University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaodong","family":"Hu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto\u2010electronics Engineering Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6327-9692","authenticated-orcid":false,"given":"Caofeng","family":"Pan","sequence":"additional","affiliation":[{"name":"Beijing Key Laboratory for Atomic Manufacturing Equipment and Intelligent Sensing Institute of Atomic Manufacturing Beihang University  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6060-1180","authenticated-orcid":false,"given":"Enxiu","family":"Wu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Precision Measurement Technology and Instruments School of Precision Instruments and Opto\u2010electronics Engineering Tianjin University  Tianjin China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,9,30]]},"reference":[{"key":"e_1_2_10_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42256\u2010022\u201000516\u20101"},{"key":"e_1_2_10_3_1","doi-asserted-by":"publisher","DOI":"10.1186\/s40537\u2010022\u201000659\u20103"},{"key":"e_1_2_10_4_1","doi-asserted-by":"publisher","DOI":"10.3390\/s23115074"},{"key":"e_1_2_10_5_1","doi-asserted-by":"publisher","DOI":"10.3390\/s131115582"},{"key":"e_1_2_10_6_1","doi-asserted-by":"publisher","DOI":"10.1007\/s44163\u2010022\u201000022\u20108"},{"key":"e_1_2_10_7_1","doi-asserted-by":"crossref","unstructured":"K.Takeuchi \u201cScaling Challenges of NAND Flash Memory And Hybrid Memory System With Storage Class Memory & NAND Flash Memory \u201d inProceedings of the IEEE 2013 Custom Integrated Circuits Conference(IEEE 2013) 1.","DOI":"10.1109\/CICC.2013.6658450"},{"key":"e_1_2_10_8_1","doi-asserted-by":"publisher","DOI":"10.1147\/rd.524.0529"},{"key":"e_1_2_10_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2009555"},{"key":"e_1_2_10_10_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4939131"},{"key":"e_1_2_10_11_1","doi-asserted-by":"crossref","unstructured":"R.Stoica M.Athanassoulis R.Johnson andA.Ailamaki \u201cEvaluating and Repairing Write Performance On Flash Devices \u201d inProceedings of the Fifth International Workshop on Data Management on New Hardware(IEEE2009).","DOI":"10.1145\/1565694.1565697"},{"key":"e_1_2_10_12_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.3c01450"},{"key":"e_1_2_10_13_1","volume-title":"FAST","author":"Boboila S.","year":"2010"},{"key":"e_1_2_10_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2917785"},{"key":"e_1_2_10_15_1","doi-asserted-by":"publisher","DOI":"10.1109\/IMW56887.2023.10145825"},{"key":"e_1_2_10_16_1","doi-asserted-by":"publisher","DOI":"10.1007\/s12598\u2010024\u201003071\u20103"},{"key":"e_1_2_10_17_1","unstructured":"J.Huang T.Chen andM.Tse \u201cStudy of Edge Charge Trapping In Gate Oxide Caused by FN and Hot\u2010Carrier Injection \u201d in2002 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2002. Proceedings (Cat. No. 02EX601)(IEEE2002)."},{"key":"e_1_2_10_18_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.325096"},{"key":"e_1_2_10_19_1","doi-asserted-by":"publisher","DOI":"10.1109\/16.678579"},{"key":"e_1_2_10_20_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"key":"e_1_2_10_21_1","doi-asserted-by":"crossref","unstructured":"M.Park S.Park andS.Cho \u201cNAND Flash Reliability Degradation Induced by HCI in Boosted Channel Potential \u201d in2010 IEEE International Reliability Physics Symposium(IEEE2010).","DOI":"10.1109\/IRPS.2010.5488692"},{"key":"e_1_2_10_22_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.05.039"},{"key":"e_1_2_10_23_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.scib.2025.03.034"},{"key":"e_1_2_10_24_1","doi-asserted-by":"publisher","DOI":"10.1002\/cnma.201800181"},{"key":"e_1_2_10_25_1","doi-asserted-by":"publisher","DOI":"10.34133\/2019\/4641739"},{"key":"e_1_2_10_26_1","doi-asserted-by":"publisher","DOI":"10.1039\/c7cs00828g"},{"key":"e_1_2_10_27_1","doi-asserted-by":"publisher","DOI":"10.1021\/jacs.8b07401"},{"key":"e_1_2_10_28_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature12385"},{"key":"e_1_2_10_29_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4774090"},{"key":"e_1_2_10_30_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aac9439"},{"key":"e_1_2_10_31_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5c11809"},{"key":"e_1_2_10_32_1","doi-asserted-by":"publisher","DOI":"10.26599\/NR.2025.94907703"},{"key":"e_1_2_10_33_1","doi-asserted-by":"publisher","DOI":"10.1038\/natrevmats.2016.52"},{"key":"e_1_2_10_34_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010022\u201000877\u2010w"},{"key":"e_1_2_10_35_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010023\u201041363\u2010x"},{"key":"e_1_2_10_36_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010025\u201064333\u2010x"},{"key":"e_1_2_10_37_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010026\u201068402\u20107"},{"key":"e_1_2_10_38_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010025\u201009621\u20108"},{"key":"e_1_2_10_39_1","doi-asserted-by":"publisher","DOI":"10.1002\/j.1538\u20107305.1967.tb01738.x"},{"key":"e_1_2_10_40_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn201809k"},{"key":"e_1_2_10_41_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms12725"},{"key":"e_1_2_10_42_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010019\u20100338\u20107"},{"key":"e_1_2_10_43_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1653685"},{"key":"e_1_2_10_44_1","doi-asserted-by":"publisher","DOI":"10.1186\/1556\u2010276X\u20109\u2010526"},{"key":"e_1_2_10_45_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010017\u20100007\u20107"},{"key":"e_1_2_10_46_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010025\u201008839\u2010w"},{"key":"e_1_2_10_47_1","doi-asserted-by":"crossref","unstructured":"D.Frohman\u2010Bentchkowsky \u201cA Fully\u2010Decoded 2048\u2010Bit Electrically\u2010Programmable MOS ROM \u201d in1971 IEEE International Solid\u2010State Circuits Conference. Digest of Technical Papers(IEEE 1971) 80.","DOI":"10.1109\/ISSCC.1971.1154978"},{"key":"e_1_2_10_48_1","doi-asserted-by":"crossref","unstructured":"F.Masuoka M.Asano H.Iwahashi T.Komuro andS.Tanaka \u201cA New Flash E2PROM Cell Using Triple Polysilicon Technology \u201d in1984 International Electron Devices Meeting(1984) 464.","DOI":"10.1109\/IEDM.1984.190752"},{"key":"e_1_2_10_49_1","doi-asserted-by":"crossref","unstructured":"E.\u2010K.Lai H.\u2010T.Lue andY.\u2010H.Hsiao \u201cA Multi\u2010Layer Stackable Thin\u2010Film Transistor (TFT) NAND\u2010Type Flash Memory \u201d in2006 International Electron Devices Meeting(IEEE 2006).","DOI":"10.1109\/IEDM.2006.346903"},{"key":"e_1_2_10_50_1","doi-asserted-by":"publisher","DOI":"10.1109\/MDAT.2025.3638204"},{"key":"e_1_2_10_51_1","doi-asserted-by":"publisher","DOI":"10.33079\/jomm.20030102"},{"key":"e_1_2_10_52_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1102896"},{"key":"e_1_2_10_53_1","doi-asserted-by":"publisher","DOI":"10.1002\/rar2.70211"},{"key":"e_1_2_10_54_1","doi-asserted-by":"publisher","DOI":"10.3390\/electronics10243156"},{"key":"e_1_2_10_55_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010020\u20100647\u2010z"},{"key":"e_1_2_10_56_1","doi-asserted-by":"publisher","DOI":"10.1007\/s12598\u2010024\u201002811\u20109"},{"key":"e_1_2_10_57_1","doi-asserted-by":"publisher","DOI":"10.1007\/s12598\u2010023\u201002573\u2010w"},{"key":"e_1_2_10_58_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2003.811702"},{"key":"e_1_2_10_59_1","doi-asserted-by":"publisher","DOI":"10.1007\/978-94-017-7512-0_1"},{"key":"e_1_2_10_60_1","unstructured":"T.Windbacher Engineering Gate Stacks For Field\u2010Effect Transistors(Technische Universit\u00e4t Wien2010)."},{"key":"e_1_2_10_61_1","doi-asserted-by":"publisher","DOI":"10.1007\/978-94-017-7512-0"},{"key":"e_1_2_10_62_1","doi-asserted-by":"publisher","DOI":"10.3390\/mi14091753"},{"key":"e_1_2_10_63_1","doi-asserted-by":"crossref","unstructured":"C.Park J.\u2010U.Kang S.\u2010Y.Park andJ.\u2010S.Kim \u201cEnergy\u2010Aware Demand Paging on NAND Flash\u2010Based Embedded Storages \u201d inProceedings of the 2004 International Symposium On Low Power Electronics And Design(IEEE2004).","DOI":"10.1145\/1013235.1013317"},{"key":"e_1_2_10_64_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201400056"},{"key":"e_1_2_10_65_1","doi-asserted-by":"publisher","DOI":"10.1007\/s11432\u2010021\u20103502\u20104"},{"key":"e_1_2_10_66_1","doi-asserted-by":"publisher","DOI":"10.1039\/d3nh00532a"},{"key":"e_1_2_10_67_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.3c01338"},{"key":"e_1_2_10_68_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsanm.5c02371"},{"key":"e_1_2_10_69_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2023.109106"},{"key":"e_1_2_10_70_1","doi-asserted-by":"publisher","DOI":"10.1007\/s40820\u2010026\u201002078\u2010y"},{"key":"e_1_2_10_71_1","doi-asserted-by":"publisher","DOI":"10.1166\/jnn.2014.8238"},{"key":"e_1_2_10_72_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.5c18930"},{"key":"e_1_2_10_73_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2024.3418289"},{"key":"e_1_2_10_74_1","doi-asserted-by":"publisher","DOI":"10.1109\/5.915374"},{"key":"e_1_2_10_75_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.816523"},{"key":"e_1_2_10_76_1","doi-asserted-by":"publisher","DOI":"10.1109\/16.141237"},{"key":"e_1_2_10_77_1","unstructured":"B.Yu L.Chang andS.Ahmed \u201cFinFET Scaling to 10 nm Gate Length \u201d inDigest. International Electron Devices Meeting(IEEE2002)."},{"key":"e_1_2_10_78_1","doi-asserted-by":"publisher","DOI":"10.54254\/2755\u20102721\/50\/20241285"},{"key":"e_1_2_10_79_1","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2017.2689738"},{"key":"e_1_2_10_80_1","doi-asserted-by":"crossref","unstructured":"J.Ryckaert P.Schuddinck andP.Weckx \u201cThe Complementary FET (CFET) for CMOS Scaling Beyond N3 \u201d in2018 IEEE Symposium on Vlsi Technology(IEEE 2018).","DOI":"10.1109\/VLSIT.2018.8510618"},{"key":"e_1_2_10_81_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3323449"},{"key":"e_1_2_10_82_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.isci.2022.105160"},{"key":"e_1_2_10_83_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn5059419"},{"key":"e_1_2_10_84_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.4c03828"},{"key":"e_1_2_10_85_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5b05066"},{"key":"e_1_2_10_86_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aav3430"},{"key":"e_1_2_10_87_1","doi-asserted-by":"publisher","DOI":"10.35848\/1347\u20104065\/ada162"},{"key":"e_1_2_10_88_1","doi-asserted-by":"publisher","DOI":"10.1080\/23746149.2016.1259585"},{"key":"e_1_2_10_89_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202509119"},{"key":"e_1_2_10_90_1","doi-asserted-by":"publisher","DOI":"10.1039\/d5cc02955d"},{"key":"e_1_2_10_91_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010020\u20100435\u20107"},{"key":"e_1_2_10_92_1","doi-asserted-by":"publisher","DOI":"10.34133\/cbsystems.0256"},{"key":"e_1_2_10_93_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202525233"},{"key":"e_1_2_10_94_1","doi-asserted-by":"publisher","DOI":"10.1109\/16.391209"},{"key":"e_1_2_10_95_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2006.876310"},{"key":"e_1_2_10_96_1","doi-asserted-by":"publisher","DOI":"10.1016\/0379\u20106779(94)90007\u20108"},{"key":"e_1_2_10_97_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598\u2010025\u201019858\u2010y"},{"key":"e_1_2_10_98_1","unstructured":"J.Jeong S. S.Hahn S.Lee andJ.Kim \u201cLifetime Improvement of {NAND} Flash\u2010Based Storage Systems Using Dynamic Program and Erase Scaling \u201d in12th USENIX Conference on File and Storage Technologies(2014)."},{"key":"e_1_2_10_99_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.126845"},{"key":"e_1_2_10_100_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010021\u201000904\u20105"},{"key":"e_1_2_10_101_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202102571"},{"key":"e_1_2_10_102_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010022\u201032380\u20103"},{"key":"e_1_2_10_103_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202300503"},{"key":"e_1_2_10_104_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202305580"},{"key":"e_1_2_10_105_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.matt.2025.102488"},{"key":"e_1_2_10_106_1","unstructured":"S.Yamada Y.Hiura T.Yamane K.Amemiya Y.Ohshima andK.Yoshikawa \u201cDegradation Mechanism of Flash EEPROM Programming After Program\/Erase Cycles \u201d inProceedings of IEEE International Electron Devices Meeting(IEEE1993)."},{"key":"e_1_2_10_107_1","doi-asserted-by":"crossref","unstructured":"L.LarcherandA.Padovani \u201cFundamental Reliability Issues Of Advanced Charge\u2010Trapping Flash Memory Devices \u201d in2010 17th IEEE International Conference on Electronics Circuits and Systems(IEEE2010).","DOI":"10.1109\/ICECS.2010.5724685"},{"key":"e_1_2_10_108_1","doi-asserted-by":"publisher","DOI":"10.1166\/jnn.2021.19393"},{"key":"e_1_2_10_109_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563\u2010019\u20100291\u2010x"},{"key":"e_1_2_10_110_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010017\u20100006\u20108"},{"key":"e_1_2_10_111_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010020\u20100655\u2010z"},{"key":"e_1_2_10_112_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202516861"},{"key":"e_1_2_10_113_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010023\u201001064\u20101"},{"key":"e_1_2_10_114_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010024\u201001315\u20109"},{"key":"e_1_2_10_115_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202515893"},{"key":"e_1_2_10_116_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010017\u201002685\u20109"},{"key":"e_1_2_10_117_1","doi-asserted-by":"publisher","DOI":"10.1002\/smm2.70005"},{"key":"e_1_2_10_118_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010024\u201054845\u20103"},{"key":"e_1_2_10_119_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.scib.2023.04.019"},{"key":"e_1_2_10_120_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010025\u201058005\u2010z"},{"key":"e_1_2_10_121_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598\u2010023\u201036784\u2010z"},{"key":"e_1_2_10_122_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42254\u2010026\u201000957\u20102"},{"key":"e_1_2_10_123_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2024.109799"},{"key":"e_1_2_10_124_1","doi-asserted-by":"publisher","DOI":"10.1088\/1674\u20104926\/24090044"},{"key":"e_1_2_10_125_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202514646"},{"key":"e_1_2_10_126_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010019\u20101573\u20109"},{"key":"e_1_2_10_127_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010017\u20100002\u2010z"},{"key":"e_1_2_10_128_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41377\u2010023\u201001107\u20104"},{"key":"e_1_2_10_129_1","doi-asserted-by":"publisher","DOI":"10.1007\/s12598\u2010025\u201003491\u20109"},{"key":"e_1_2_10_130_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010024\u201001229\u20106"},{"key":"e_1_2_10_131_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010025\u201002089\u20107"},{"key":"e_1_2_10_132_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41699\u2010025\u201000641\u20106"},{"key":"e_1_2_10_133_1","doi-asserted-by":"publisher","DOI":"10.3390\/ma14051192"},{"key":"e_1_2_10_134_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202308502"},{"key":"e_1_2_10_135_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361\u20106528\/aba92b"},{"key":"e_1_2_10_136_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010021\u201000921\u20104"},{"key":"e_1_2_10_137_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202311652"},{"key":"e_1_2_10_138_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5c14262"},{"key":"e_1_2_10_139_1","doi-asserted-by":"publisher","DOI":"10.1039\/d0nr03965a"},{"key":"e_1_2_10_140_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0278919"},{"key":"e_1_2_10_141_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.5c01472"},{"key":"e_1_2_10_142_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmat.2026.101233"},{"key":"e_1_2_10_143_1","doi-asserted-by":"publisher","DOI":"10.3389\/fmats.2022.872909"},{"key":"e_1_2_10_144_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn301572c"},{"key":"e_1_2_10_145_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aea2450"},{"key":"e_1_2_10_146_1","doi-asserted-by":"publisher","DOI":"10.1007\/s12598\u2010025\u201003454\u20100"},{"key":"e_1_2_10_147_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.3c07952"},{"key":"e_1_2_10_148_1","doi-asserted-by":"publisher","DOI":"10.1533\/9780857098092.1"},{"key":"e_1_2_10_149_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2012.240"},{"key":"e_1_2_10_150_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010025\u201066210\u2010z"},{"key":"e_1_2_10_151_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202200032"},{"key":"e_1_2_10_152_1","doi-asserted-by":"publisher","DOI":"10.1002\/inf2.12493"},{"key":"e_1_2_10_153_1","doi-asserted-by":"publisher","DOI":"10.1002\/aidi.202500112"}],"container-title":["Advanced Science"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/advs.78009","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/advs.78009","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/advs.78009","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T15:37:46Z","timestamp":1790782666000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/advs.78009"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,30]]},"references-count":152,"alternative-id":["10.1002\/advs.78009"],"URL":"https:\/\/doi.org\/10.1002\/advs.78009","archive":["Portico"],"relation":{},"ISSN":["2198-3844","2198-3844"],"issn-type":[{"value":"2198-3844","type":"print"},{"value":"2198-3844","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,30]]},"assertion":[{"value":"2026-07-17","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-09-21","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-09-30","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e78009"}}